Page 1
MOSFET – Power, Single
N-Channel
100 V, 26 mW, 28 A
NVMFS027N10MCL
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
• Low Q
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 3)
Power Dissipation
R
q
JC
Continuous Drain
Current R
(Notes 1, 2, 3)
Power Dissipation
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature
Range
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
q
JC
(Note 1)
q
JA
(Notes 1, 2)
= 1.3 A)
L(pk)
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 2)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
= 25°C unless otherwise noted)
J
Symbol Value Unit
TC = 25°C
Steady
State
Steady
State
TA = 25°C, t
TC = 100°C 20
TC = 25°C
TC = 100°C 23
TA = 25°C
TA = 100°C 5.6
TA = 25°C
TA = 100°C 1.8
= 10 ms
p
P
P
I
TJ, T
E
R
q
R
q
2
, 2 oz. Cu pad.
DSS
GS
I
D
D
I
D
D
DM
S
AS
T
L
JC
JA
stg
100 V
±20 V
28
46
7.9
3.5
137 A
−55 to
+175
35 A
414 mJ
260 °C
3.3
42.4
A
W
A
W
°C
°C/W
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V
(BR)DSS
100 V
G (4)
R
MAX ID MAX
DS(ON)
26 mW @ 10 V
35 mW @ 4.5 V
D (5,6)
S (1,2,3)
N−CHANNEL MOSFET
28 A
MARKING
DIAGRAM
1
DFN5
CASE 488AA
STYLE 1
XXXXXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
S
S
S
G
D
D
XXXXXX
AYWZZ
D
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2020
February, 2021 − Rev. 0
1 Publication Order Number:
NVMFS027N10MCL/D
Page 2
NVMFS027N10MCL
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Ty p Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
VGS = 0 V,
V
= 100 V
DS
TJ = 25 °C 1.0
TJ = 125°C 100
VDS = 0 V, VGS = 20 V 100 nA
100 V
53
mV/°C
mA
ON CHARACTERISTICS
Gate Threshold Voltage
Threshold Temperature Coefficient V
V
GS(TH)/TJ
Drain−to−Source On Resistance R
Forward Transconductance g
GS(TH)
DS(on)
FS
VGS = VDS, ID = 38 mA
VGS = 10 V ID = 7 A 21 26
VGS = 4.5 V ID = 5 A 28 35
VDS = 10 V, ID = 7 A 25 S
1 3 V
−6 mV/°C
mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
Output Capacitance C
Reverse Transfer Capacitance C
Gate Resistance R
Total Gate Charge Q
Total Gate Charge Q
G(TOT)
G(TOT)
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V
Output Charge Q
ISS
OSS
RSS
G
G(TH)
GS
GD
GP
OSS
VGS = 0 V, f = 1 MHz, VDS = 50 V
VGS = 4.5 V, VDS = 50 V; ID = 7 A 5.5 nC
VGS = 10 V, VDS = 50 V; ID = 7 A 11.5 nC
VGS = 10 V, VDS = 50 V; ID = 7 A
VGS = 0 V, VDS = 50 V 87 nC
800
300
4
0.41
1.3
2.1
1.2
2.5 V
pF
W
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
d(ON)
r
f
VGS = 10 V, VDS = 50 V,
= 7 A, RG = 6.0 W
I
D
7.4
19
2.9
2
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Reverse Recovery Charge Q
Charge Time t
Discharge Time t
V
SD
RR
RR
a
b
V
GS
V
= 0 V, I
GS
V
= 0 V, dIS/dt = 100 A/ms, I
GS
= 0 V, I
= 7 A, TJ = 25°C 0.84 1.3
S
= 7 A, TJ = 125°C 0.73
S
S
= 3 A
28 ns
17 nC
13.9 ns
14.2 ns
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Switching characteristics are independent of operating junction temperatures.
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2
Page 3
NVMFS027N10MCL
TYPICAL CHARACTERISTICS
25
20
15
10
, DRAIN CURRENT (A)
D
I
5
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
40
35
30
25
20
, DRAIN−TO−SOURCE RESISTANCE (mW)
15
1
DS(on)
R
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
25
D
, DRAIN−TO−SOURCE RESISTANCE (mW)
DS(on)
R
20
15
10
5
0
35
30
25
20
15
VDS = 10 V
TJ = 25°C
TJ = 25°C
TJ = 150°C
154
TJ = −55°C
320
VGS = 4.5 V
VGS = 10 V
7
91113
4
1551
VGS = 10 V to 3.2 V
3.0 V
2.8 V
2.6 V
, DRAIN CURRENT (A)
2.4 V
3210
TJ = 25°C
= 7 A
I
D
533
49
862
I
107
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
DS(on)
R
2.5
2.0
1.5
1.0
0.5
VGS = 10 V
= 7 A
I
D
50
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
150
17512510075250−25−50
Figure 5. On−Resistance Variation with
Temperature
100
10
TJ = 175°C
1
TJ = 150°C
TJ = 125°C
0.1
TJ = 85°C
0.01
, LEAKAGE (nA)
0.001
DSS
I
0.0001
0.00001
TJ = 25°C
Figure 6. Drain−to−Source Leakage Current
30 50 80 100
40
vs. Voltage
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3
9070602010
Page 4
NVMFS027N10MCL
TYPICAL CHARACTERISTICS
10K
1K
100
10
C, CAPACITANCE (pF)
VGS = 0 V
= 25°C
T
J
f = 1 MHz
1
30
60504010 200
VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
100
t
d(off)
10
t
d(on)
t, TIME (ns)
t
f
t
r
VGS = 10 V
V
I
1
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
TC = 25°C
Single Pulse
VGS ≤ 10 V
100
10
, DRAIN CURRENT (A)
1
D
I
0.1
0.1 1000
Limit
R
DS(on)
Thermal Limit
Package Limit
10 ms
0.5 ms
1 ms10 ms
101
100
VDS, DRAIN−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area Figure 12. Maximum Drain Current vs. Time in
DS
= 7 A
D
C
C
= 50 V
C
ISS
OSS
RSS
10
9
8
7
6
5
4
3
2
, GATE−TO−SOURCE VOLTAGE (V)
1
GS
0
V
100908070
10
, SOURCE CURRENT (A)
S
TJ = 125°C
I
1
505
100
10
(A)
PEAK
I
1
0.1
0.00001 0.0001 0.001 0.01
Q
GS
GD
Q
VDS = 50 V
= 7 A
I
D
T
= 25°C
J
2
4
860
10
Drain−to−Source Voltage vs. Total Charge
VGS = 0 V
TJ = 25°C
TJ = −55°C
0.90.80.70.60.50.4
V
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
Figure 10. Diode Forward Voltage vs. Current
T
= 25°C
J(initial)
T
= 125°C
J(initial)
Avalanche
12
1.0
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4
Page 5
NVMFS027N10MCL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
20%
10
10%
5%
2%
1
1%
R(t) (°C/W)
0.1
Single Pulse
0.01
0.010.001 10.0001 0.10.000010.000001
PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device Marking Package Shipping
NVMFS027N10MCLT1G 027L10 DFN5
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
10 100 1000
†
1500 / Tape & Reel
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5
Page 6
0.05
0.10 C
0.10 C
c
D
2
D1
1234
TOP VIEW
SIDE VIEW
8X
b
A0.10 BC
L
14
2 X
e/2
e
0.20
A
E1
E
2
A
DETAIL A
K
NVMFS027N10MCL
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
C
B
2 X
0.20 C
c
ISSUE N
DETAIL A
2X
2X
0.475
4 X
q
A1
C
SEATING
PLANE
RECOMMENDED
SOLDERING FOOTPRINT*
4.5600.495
2X
1.530
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
DIM MIN NOM
A1 0.00 −−−
D1 4.70 4.90
D2 3.80 4.00
E1 5.70 5.90
E2 3.45 3.65
L1 0.125 REF
MILLIMETERS
A 0.90 1.00
b 0.33 0.41
c 0.23 0.28
D 5.15
5.00 5.30
E 6.15
6.00 6.30
e 1.27 BSC
G 0.51 0.575
K 1.20 1.35
L 0.51 0.575
M 3.00 3.40
q 0 −−−
_
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
3.80
12
_
3.200
4.530
PIN 5
(EXPOSED PAD)
E2
L1
M
2X
0.905
1
1.330
0.965
G
D2
BOTTOM VIEW
1.000
4X
4X
0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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