ON Semiconductor NVMFS027N10MCL User Manual

MOSFET – Power, Single

N-Channel

100 V, 26 mW, 28 A

NVMFS027N10MCL

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

• Low Q

to Minimize Conduction Losses

DS(on)

and Capacitance to Minimize Driver Losses

G

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain
Current R
(Notes 1, 3)

Power Dissipation
R

q

JC

Continuous Drain
Current R
(Notes 1, 2, 3)

Power Dissipation
R

q

JA

Pulsed Drain Current

Operating Junction and Storage Temperature
Range

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche
Energy (I

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

q

JC

(Note 1)

q

JA

(Notes 1, 2)

= 1.3 A)

L(pk)

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case − Steady State (Note 1)

Junction−to−Ambient − Steady State (Note 2)

1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm

3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.

= 25°C unless otherwise noted)

J

Symbol Value Unit

TC = 25°C

Steady

State

Steady

State

TA = 25°C, t

TC = 100°C 20

TC = 25°C

TC = 100°C 23

TA = 25°C

TA = 100°C 5.6

TA = 25°C

TA = 100°C 1.8

= 10 ms

p

P

P

I

TJ, T

E

R

q

R

q

2

, 2 oz. Cu pad.

DSS

GS

I

D

D

I

D

D

DM

S

AS

T

L

JC

JA

stg

100 V

±20 V

28

46

7.9

3.5

137 A

−55 to
+175

35 A

414 mJ

260 °C

3.3

42.4

A

W

A

W

°C

°C/W

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V

(BR)DSS

100 V

G (4)

R

MAX ID MAX

DS(ON)

26 mW @ 10 V

35 mW @ 4.5 V

D (5,6)

S (1,2,3)

N−CHANNEL MOSFET

28 A

MARKING
DIAGRAM

1

DFN5

CASE 488AA

STYLE 1

XXXXXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability

S
S
S

G

D

D

XXXXXX

AYWZZ

D

D

ORDERING INFORMATION

See detailed ordering, marking and shipping information on
page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2020

February, 2021 − Rev. 0

1 Publication Order Number:

NVMFS027N10MCL/D

NVMFS027N10MCL

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Ty p Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage

V

V

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS

T

J

DSS

GSS

VGS = 0 V, ID = 250 mA

/

VGS = 0 V,

V

= 100 V

DS

TJ = 25 °C 1.0

TJ = 125°C 100

VDS = 0 V, VGS = 20 V 100 nA

100 V

53

mV/°C

mA

ON CHARACTERISTICS

Gate Threshold Voltage

Threshold Temperature Coefficient V

V

GS(TH)/TJ

Drain−to−Source On Resistance R

Forward Transconductance g

GS(TH)

DS(on)

FS

VGS = VDS, ID = 38 mA

VGS = 10 V ID = 7 A 21 26

VGS = 4.5 V ID = 5 A 28 35

VDS = 10 V, ID = 7 A 25 S

1 3 V

−6 mV/°C

mW

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

C

Output Capacitance C

Reverse Transfer Capacitance C

Gate Resistance R

Total Gate Charge Q

Total Gate Charge Q

G(TOT)

G(TOT)

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Plateau Voltage V

Output Charge Q

ISS

OSS

RSS

G

G(TH)

GS

GD

GP

OSS

VGS = 0 V, f = 1 MHz, VDS = 50 V

VGS = 4.5 V, VDS = 50 V; ID = 7 A 5.5 nC

VGS = 10 V, VDS = 50 V; ID = 7 A 11.5 nC

VGS = 10 V, VDS = 50 V; ID = 7 A

VGS = 0 V, VDS = 50 V 87 nC

800

300

4

0.41

1.3

2.1

1.2

2.5 V

pF

W

nC

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

t

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

d(ON)

r

f

VGS = 10 V, VDS = 50 V,

= 7 A, RG = 6.0 W

I

D

7.4

19

2.9

2

ns

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Reverse Recovery Charge Q

Charge Time t

Discharge Time t

V

SD

RR

RR

a

b

V

GS

V

= 0 V, I

GS

V

= 0 V, dIS/dt = 100 A/ms, I

GS

= 0 V, I

= 7 A, TJ = 25°C 0.84 1.3

S

= 7 A, TJ = 125°C 0.73

S

S

= 3 A

28 ns

17 nC

13.9 ns

14.2 ns

V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Switching characteristics are independent of operating junction temperatures.

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