ON Semiconductor NVMFD5C674NL User Manual
MOSFET – Power, Dual
N-Channel
60 V, 14.4 mW, 42 A
NVMFD5C674NL
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
• Low Q
• NVMFD5C674NLWF − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
V
(BR)DSS
60 V
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R
MAX ID MAX
DS(ON)
14.4 mW @ 10 V
20.4 mW @ 4.5 V
42 A
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 2, 3)
Power Dissipation
R
q
JC
Continuous Drain
Current R
(Notes 1, 2, 3)
Power Dissipation
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature TJ, T
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (T
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
q
JC
(Notes 1, 2)
q
JA
(Notes 1 & 2)
= 25°C, I
J
= 25°C unless otherwise noted)
J
TC = 25°C
TC = 100°C 24.9
TC = 25°C
TC = 100°C 18
TA = 25°C
TA = 100°C 7.2
TA = 25°C
TA = 100°C 1.5
= 10 ms
p
L(pk)
Steady
State
Steady
State
TA = 25°C, t
= 1.6 A)
Symbol Value Unit
stg
60 V
±20 V
35.2
37
10.1
3.1
119 A
−55 to
+ 175
44 A
61 mJ
260 °C
A
W
A
W
°C
P
P
I
E
DSS
GS
I
D
D
I
D
D
DM
S
AS
T
L
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
R
q
JC
R
q
JA
2
, 2 oz. Cu pad.
4.1
49
°C/W
Dual N−Channel
D2
S2
G1
D1
G2
S1
MARKING
DIAGRAM
D1
D1
1
DFN8 5x6
(SO8FL)
CASE 506BT
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
S1
G1
S2
G2
XXXXXX
AYWZZ
D2
D1
D1
D2
D2
D2
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
December, 2020 − Rev. P4
1 Publication Order Number:
NVMFD5C674NL/D
NVMFD5C674NL
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
VGS = 0 V,
V
= 60 V
DS
TJ = 25 °C 10
TJ = 125°C 100
VDS = 0 V, VGS = 20 V 100 nA
60 V
28
mV/°C
mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient V
V
GS(TH)/TJ
Drain−to−Source On Resistance R
Forward Transconductance g
GS(TH)
DS(on)
FS
VGS = VDS, ID = 25 mA
VGS = 10 V ID = 10 A 11.7 14.4
VGS = 4.5 V ID = 10 A 16.4 20.4
VDS = 15 V, ID = 10 A 27.5 S
1.2 2.2 V
−4.6 mV/°C
mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V
C
ISS
OSS
RSS
G(TOT)
G(TOT)
G(TH)
GS
GD
GP
VGS = 0 V, f = 1 MHz, VDS = 25 V
VGS = 4.5 V, VDS = 48 V; ID = 20 A 4.7
VGS = 10 V, VDS = 48 V; ID = 20 A 10
VGS = 4.5 V, VDS = 48 V; ID = 10 A
640
313
7.7
1.4
2.3
1.0
3.1 V
pF
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(ON)
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
r
f
VGS = 4.5 V, VDS = 48 V,
= 5 A, RG = 1.0 W
I
D
9.5
32.1
18.6
27.5
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= 10 A
S
VGS = 0 V, dIS/dt = 20 A/ms,
I
= 5 A
S
TJ = 25°C 0.9 1.2
TJ = 125°C 0.8
23.8
11.5
12.3
11.2 nC
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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NVMFD5C674NL
TYPICAL CHARACTERISTICS
40
35
30
25
20
15
10
, DRAIN CURRENT (A)
D
I
5
0
0.0 0.5 1.0 1.5 2.0 2.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
VGS = 4.5 V to 10 V
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
40
35
30
25
TJ = 25°C
I
D
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
= 10 A
30
VDS = 10 V
25
20
15
10
, DRAIN CURRENT (A)
D
I
5
0
0123456
26
24
22
20
18
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = −55°C
VGS = 4.5 V
20
15
, DRAIN−TO−SOURCE RESISTANCE (mW)
10
345678910
DS(on)
R
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.5
VGS = 10 V
= 10 A
I
D
2
1.5
1
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
0.5
DS(on)
R
0
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
16
14
12
, DRAIN−TO−SOURCE RESISTANCE (mW)
10
10 12 14 16 18 20 22 24 26 28 30
DS(on)
R
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100000
10000
1000
100
10
, LEAKAGE (nA)
1
DSS
I
0.1
0.01
5 10152025303540
TJ = 175°C
TJ = 150°C
TJ = 125°C
TJ = 85°C
TJ = 25°C
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
VGS = 10 V
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