ON Semiconductor NVMFD5C462N User Manual

NVMFD5C462N

MOSFET – Power, Dual

N-Channel

40 V, 5.4 mW, 70 A

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

• Low Q

• NVMFD5C462NWF − Wettable Flank Option for Enhanced Optical

Inspection

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

to Minimize Conduction Losses

DS(on)

and Capacitance to Minimize Driver Losses

G

V

(BR)DSS

40 V

www.onsemi.com

R

MAX ID MAX

DS(ON)

5.4 m @ 10 V

70 A

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain
Current R
(Notes 1, 2, 3)

Power Dissipation
R



JC

Continuous Drain
Current R
(Notes 1, 2, 3)

Power Dissipation
R



JA

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche
Energy (T

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.



JC

(Notes 1, 2)



JA

(Notes 1 & 2)

= 25°C, I

J

= 25°C unless otherwise noted)

J

TC = 25°C

TC = 100°C 49

TC = 25°C

TC = 100°C 25

TA = 25°C

TA = 100°C 12.5

TA = 25°C

TA = 100°C 1.6

= 10 s

p

L(pk)

Steady

State

Steady

State

TA = 25°C, t

= 5 A)

Symbol Value Unit

stg

40 V

±20 V

70

50

17.6

3.2

298 A

−55 to
+ 175

41.7 A

146 mJ

260 °C

A

W

A

W

°C

P

P

I

E

DSS

GS

I

D

D

I

D

D

DM

S

AS

T

L

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

47

°C/W

3

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm

3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.

R



JC

R



JA

2

, 2 oz. Cu pad.

Dual N−Channel

D2

S2

G1

D1

G2

S1

MARKING
DIAGRAM

D1

D1

1

DFN8 5x6

(SO8FL)

CASE 506BT

XXXXXX = 5C462N (NVMFD5C462N)

= or 462NWF (NVMFD5C462NWF)

A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability

S1
G1
S2
G2

XXXXXX

AYWZZ

D2

D1
D1
D2
D2

D2

ORDERING INFORMATION

See detailed ordering, marking and shipping information on
page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2017

July, 2019 − Rev. 1

1 Publication Order Number:

NVMFD5C462N/D

NVMFD5C462N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Ty p Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage

V

V

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS

T

J

DSS

GSS

VGS = 0 V, ID = 250 A

/

VGS = 0 V,

V

= 40 V

DS

TJ = 25 °C 10

TJ = 125°C 100

VDS = 0 V, VGS = 20 V 100 nA

40 V

23

mV/°C

A

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Threshold Temperature Coefficient V

Drain−to−Source On Resistance R

V

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 A

VGS = 10 V ID = 25 A 4.5 5.4

2.5 3.5 V

−6.5 mV/°C

m

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Plateau Voltage V

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

GP

VGS = 0 V, f = 1 MHz, VDS = 25 V

VGS = 10 V, VDS = 32 V; ID = 25 A

1020

550

21

16

3.0

5.0

2.8

4.8 V

pF

nC

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time t

d(ON)

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

r

f

VGS = 10 V, VDS = 32 V,

= 25 A, RG = 1.0 

I

D

12

30

26

10

ns

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

V

SD

RR

a

b

RR

VGS = 0 V,

I

= 25 A

S

VGS = 0 V, dIS/dt = 100 A/s,

I

= 25 A

S

TJ = 25°C 0.86 1.2

TJ = 125°C 0.75

29

14

14

12 nC

V

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 s, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

www.onsemi.com

2

NVMFD5C462N

TYPICAL CHARACTERISTICS

200

180

160

140

120

100

80

60

, DRAIN CURRENT (A)

D

I

40

20

0

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

20

18

16

14

12

10

8

6

4

, DRAIN−TO−SOURCE RESISTANCE (m)

2
0

DS(on)

4

R

VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Gate−to−Source

1.51.00.50

Voltage

VGS = 8 to 10 V

ID = 25 A

T

J

= 25°C

7 V

6 V

5 V

4 V

3.02.52.0 5.03.0

1098765

100

90

80

70

60

50

40

30

, DRAIN CURRENT (A)

D

I

20

10

0

10

9

8

7

6

5

4

3

2

, DRAIN−TO−SOURCE RESISTANCE (m)

1

DS(on)

R

20

TJ = 25°C

TJ = 125°C

4.0

TJ = −55°C

7040100

60 80

5030 90

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

5.5

VGS = 10 V

6.04.53.5

100

1.9

ID = 25 A

1.7

1.5

1.3

1.1

0.9

0.7

, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

DS(on)

R

= 10 V

V

GS

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Temperature

175

150

1251007550250−25−50

www.onsemi.com

100K

10K

1K

, LEAKAGE (nA)

DSS

I

100

10

3

TJ = 150°C

TJ = 125°C

TJ = 85°C

15 35

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

40302520105