ON Semiconductor NVMFD5C446N User Manual

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Page 1

NVMFD5C446N

Power MOSFET

40 V, 2.9 mW, 127 A, Dual N−Channel

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

• Low Q

• NVMFD5C446NWF − Wettable Flank Option for Enhanced Optical

Inspection

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

to Minimize Conduction Losses

DS(on)

and Capacitance to Minimize Driver Losses

(BR)DSS

40 V

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MAX ID MAX

DS(ON)

2.9 m @ 10 V

127 A

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V Gate−to−Source Voltage V Continuous Drain

Current R (Notes 1, 2, 3)

Power Dissipation R

Continuous Drain Current R (Notes 1, 2, 3)

Power Dissipation R

Pulsed Drain Current Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I Single Pulse Drain−to−Source Avalanche

Energy (T Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.



(Notes 1, 2)



(Notes 1 & 2)



= 25°C, I

= 25°C unless otherwise noted)

TC = 25°C

TC = 100°C 90

TC = 25°C

TC = 100°C 44

TA = 25°C

TA = 100°C 17

TA = 25°C

TA = 100°C 1.6

= 10 s

L(pk)

Steady

State

Steady

State

TA = 25°C, t

= 11 A)

Symbol Value Unit

stg

40 V ±20 V 127

3.2

637 A

−55 to + 175

74 A

223 mJ

260 °C

°C

DSS

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case − Steady State Junction−to−Ambient − Steady State (Note 2)

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm

3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.



, 2 oz. Cu pad.

1.7 47

°C/W

Dual N−Channel

MARKING DIAGRAM

DFN8 5x6

(SO8FL)

CASE 506BT

XXXXXX = 5C446N (NVMFD5C446N)

= or 446NWF (NVMFD5C446NWF)

A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability

S1 G1 S2 G2

XXXXXX

AYWZZ

D1 D1 D2 D2

ORDERING INFORMATION

See detailed ordering, marking and shipping information on page 5 of this data sheet.

October, 2017 − Rev. 1

1 Publication Order Number:

NVMFD5C446NL/D

Page 2

NVMFD5C446N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage

Temperature Coefficient Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V, ID = 250 A

VGS = 0 V,

= 40 V

TJ = 25 °C 10

TJ = 125°C 100

VDS = 0 V, VGS = 20 V 100 nA

40 V

mV/°C

A

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage Threshold Temperature Coefficient V Drain−to−Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 A

VGS = 10 V ID = 30 A 2.4 2.9

2.5 3.5 V

−6.4 mV/°C m

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance Output Capacitance C Reverse Transfer Capacitance C Total Gate Charge Q Threshold Gate Charge Q Gate−to−Source Charge Q Gate−to−Drain Charge Q Plateau Voltage V

ISS OSS RSS

G(TOT)

G(TH)

GS GD GP

VGS = 0 V, f = 1 MHz, VDS = 25 V

VGS = 10 V, VDS = 32 V; ID = 30 A

2450 1200

44 38

7.0 11

7.0

4.5 V

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time t

d(ON)

Rise Time t Turn−Off Delay Time t

d(OFF)

Fall Time t

VGS = 10 V, VDS = 32 V,

= 30 A, RG = 1.0 

18 39 47 17

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t Charge Time t Discharge Time t Reverse Recovery Charge Q

a b RR

VGS = 0 V,

= 30 A

VGS = 0 V, dIS/dt = 100 A/s,

= 30 A

TJ = 25°C 0.8 1.2

TJ = 125°C 0.7

50 25 25

35 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 s, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

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Page 3

NVMFD5C446N

TYPICAL CHARACTERISTICS

200 180

160 140 120 100

80 60

, DRAIN CURRENT (A)

40 20

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

9 8 7 6 5 4 3 2 1

, DRAIN−TO−SOURCE RESISTANCE (m)

DS(on)

VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Gate−to−Source

10 to 7 V

Voltage

6 V

5 V

VGS = 4 V

1.51.00.50

ID = 30 A

= 25°C

3.02.52.0 5.0

1098765

250

VDS = 3 V

200

150

100

, DRAIN CURRENT (A)

TJ = 125°C

, DRAIN−TO−SOURCE RESISTANCE (m)

DS(on)

TJ = 25°C

TJ = −55°C

4.0 5.5

VGS = 10 V

40 60

30 80 90

5010 200

6.04.53.53.0

100

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

1.8 ID = 30 A

1.7

1.6

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

DS(on)

= 10 V

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Temperature

1251007550250−25−50

150

175

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100K

10K

, LEAKAGE (nA)

DSS

100

TJ = 150°C

TJ = 125°C

TJ = 85°C

15 35

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

40302520105

Page 4

NVMFD5C446N

TYPICAL CHARACTERISTICS

10K

100

C, CAPACITANCE (pF)

TJ = 25°C V f = 1 MHz

VGS = 10 V V

100

d(off)

t, TIME (ns)

iss

oss

8 7 6 5

4 3

= 0 V

15 35

3025520 40100

rss

2 1

, GATE−TO−SOURCE VOLTAGE (V)

155

VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge

100

VGS = 0 V

TJ = 125°C

= 32 V

d(on)

, SOURCE CURRENT (A)

VDS = 32 V

= 30 A

= 25°C

35302520100

RG, GATE RESISTANCE ()

Figure 9. Resistive Switching Time Variation

1000

100

TC = 25°C

≤ 10 V

Single Pulse

, DRAIN CURRENT (A)

0.1

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

101

vs. Gate Resistance

10 s

0.5 ms

1 ms

DS(on)

Limit

10 ms

Thermal Limit Package Limit

Safe Operating Area

100

0.1

TJ = 25°C

0.4 V

, SOURCE−TO−DRAIN VOLTAGE (V)

TJ = −55°C

0.90.70.60.50.3

0.8 1.0

Figure 10. Diode Forward Voltage vs. Current

100

= 25°C

J(initial)

(A)

PEAK

10001010.1

0.00001

= 100°C

J(initial)

0.0001 0.001 0.01 TIME IN AVALANCHE (s)

Figure 12. Maximum Drain Current vs. Time in

Avalanche

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Page 5

100

R(t) (°C/W)

0.1

NVMFD5C446N

TYPICAL CHARACTERISTICS

50% Duty Cycle

20% 10% 5%

2% 1%

0.01

Single Pulse

0.010.001 100.0001 0.10.00001 10.000001

PULSE TIME (sec)

100 1000

Figure 13. Thermal Response

DEVICE ORDERING INFORMATION

Device Marking Package Shipping

NVMFD5C446NT1G 5C446N DFN8

(Pb−Free)

NVMFD5C446NWFT1G 446NWF DFN8

(Pb−Free, Wettable Flanks)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

1500 / Tape & Reel

†

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Page 6

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual)

SCALE 2:1

PIN ONE

IDENTIFIER

NOTE 7

0.10 C

NOTE 4

DETAIL B

1234

TOP VIEW

SIDE VIEW

BOTTOM VIEW

DETAIL A

0.20 C

SEATING

PLANE NOTE 6

DETAIL B

ALTERNATE

CONSTRUCTION

A0.10 B

0.05

NOTE 3

CASE 506BT

ISSUE E

DETAIL A

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 MM FROM THE TERMINAL TIP.

4. PROFILE TOLERANCE APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS.

5. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.

6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY.

7. A VISUAL INDICATOR FOR PIN 1 MUST BE LOCATED IN THIS AREA.

GENERIC

MARKING DIAGRAM*

*This information is generic. Please refer

to device data sheet for actual part marking.

XXXXXX

AYWZZ

XXXXXX= Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability

SOLDERING FOOTPRINT*

4.56

0.75

4.84

2.30

DATE 26 FEB 2013

MILLIMETERS

3.70

MAX

0.42

4.90

4.10

5.90

4.15

0.55

0.61

3.50

0.56

6.59

DIM MIN

A 0.90

A1 −−−

b 0.33

b1 0.33 0.42

c 0.20

D 5.15 BSC D1 4.70 D2 3.90 D3 1.50 1.70

E 6.15 BSC E1 5.70 E2 3.90

e 1.27 BSC

G 0.45

h −−−

K 0.51 K1 0.56 −−−

L 0.48 M 3.25 N 1.80 2.00

2.08

1.40

−−−

MAX

1.10

0.05

0.51

0.33

5.10

4.30

1.90

6.10

4.40

0.65 12

−−−

0.71

3.75

2.20

0.70

1.00

1.27 PITCH

5.55

DIMENSION: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98AON50417E

DFN8 5X6, 1.27P DUAL FLAG (SO8FL−DUAL)

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com

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TECHNICAL SUPPORT North American Technical Support:

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Europe, Middle East and Africa Technical Support:

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ON Semiconductor NVMFD5C446N User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual