ON Semiconductor NVMFD5873NL User Manual
NVMFD5873NL
)
-
Power MOSFET
60 V, 13 mW, 58 A, Dual N−Channel Logic
Level, Dual SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Designs
• Low R
• Low Capacitance to Minimize Driver Losses
• NVMFD5873NLWF − Wettable Flanks Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• This is a Pb−Free Device
MAXIMUM RATINGS (T
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain Cur
rent R
Y
2, 3, 4)
Power Dissipation
R
Y
J−mb
Continuous Drain Cur
rent R
q
JA
& 4)
Power Dissipation
(Notes 1 & 3)
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature TJ, T
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 10 V, I
L = 0.1 mH, R
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Junction−to−Mounting Board (top) − Steady
State (Notes 2, 3)
Junction−to−Ambient − Steady State (Note 3) R
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. P si (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm
4. Maximum current for pulses as long as 1 second are higher but are dependent
on pulse duration and duty cycle.
to Minimize Conduction Losses
DS(on)
= 25°C unless otherwise noted)
J
Parameter
(Notes 1,
J−mb
(Notes 1, 2, 3
(Notes 1, 3
= 25 W)
G
Steady
State
Steady
State
TA = 25°C, t
L(pk)
Parameter
Symbol Value Unit
stg
60 V
"20 V
58
107
10
3.1
190 A
−55 to
175
58 A
40 mJ
260 °C
1.4
48
DSS
GS
Tmb = 25°C
Tmb = 100°C 41
Tmb = 25°C
Tmb = 100°C 54
TA = 25°C
TA = 100°C 7.0
TA = 25°C
TA = 100°C 1.6
= 10 ms
p
= 28.3 A,
I
D
P
D
I
D
P
D
I
DM
S
E
AS
T
L
Symbol Value Unit
R
Y
J−mb
q
JA
2
, 2 oz. Cu pad.
A
W
A
W
°C
°C/W
http://onsemi.com
G1
V
(BR)DSS
60 V
R
DS(on)
13 mW @ 10 V
16.5 mW @ 4.5 V
Dual N−Channel
D1
S1
MAX ID MAX
58 A
D2
G2
S2
MARKING DIAGRAM
D1
1
DFN8 5x6
(SO8FL)
CASE 506BT
5873NL = Specific Device Code
5873LW = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
S1
G1
S2
G2
for NVMFD5873NL
for NVMFD5873NLWF
D1
5873xx
AYWZZ
D2
D2
D1
D1
D2
D2
ORDERING INFORMATION
Device Package Shipping
NVMFD5873NLT1G DFN8
(Pb−Free)
NVMFD5873NLWFT1G DFN8
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1500 / Tape &
Reel
1500 / Tape &
Reel
†
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 3
1 Publication Order Number:
NVMFD5873NL/D
NVMFD5873NL
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
V
(BR)DSS
V
(BR)DSS/TJ
DSS
GSS
VGS = 0 V, ID = 250 mA
VGS = 0 V,
V
= 60 V
DS
VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Threshold Temperature Coefficient V
Drain−to−Source On Resistance R
V
GS(TH)
GS(TH)/TJ
DS(on)
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 15 A 10.7 13 mW
VGS = 4.5 V, ID = 10 A 13.6 16.5
Forward Transconductance g
FS
VDS = 5.0 V, ID = 15 A 15 S
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Total Gate Charge Q
C
iss
oss
rss
G(TOT)
G(TH)
GS
GD
G(TOT)
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
VGS = 4.5 V, VDS = 48 V,
ID = 15 A
VGS = 10 V, VDS = 48V, ID = 15 A 30.5 nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t
Fall Time t
Turn−On Delay Time t
Rise Time t
Turn−Off Delay Time t
Fall Time t
t
d(on)
d(off)
d(on)
d(off)
r
f
r
f
VGS = 4.5 V, VDS = 48 V,
= 15 A, RG = 2.5 W
I
D
VGS = 10 V, VDS = 48 V,
= 15 A, RG = 2.5 W
I
D
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= 15 A
S
VGS = 0 V, dIS/dt = 100 A/ms,
I
= 15 A
S
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
60 V
54.9 mV/°C
TJ = 25°C 1.0 mA
TJ = 125°C 100
1.5 2.5 V
−5.8 mV/°C
1560
145
98
16.5
1.3
4.0
8.8
10.8
51
21
42.6
9.5
13
25
6.6
TJ = 25°C 0.8 1.0
TJ = 125°C 0.7
22.4
14.5
9.0
18 nC
pF
nC
ns
ns
V
ns
http://onsemi.com
2
NVMFD5873NL
TYPICAL CHARACTERISTICS
80
10 V
60
40
20
, DRAIN CURRENT (A)
D
I
0
0.0 1.0 2.0 3.0 4.0 5.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
4.5 V
VGS = 3.0 V
TJ = 25°C
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.025
ID = 15 A
T
0.020
0.015
0.010
3.8 V
3.4 V
= 25°C
J
80
VDS ≥ 10 V
60
40
TJ = 25°C
20
, DRAIN CURRENT (A)
D
I
0.0200
0.0175
0.0150
0.0125
0.0100
0.0075
TJ = 125°C
0
2.0 2.5 3.0 3.5 4.0 4.5
TJ = 25°C
TJ = −55°C
VGS = 4.5 V
VGS = 10 V
, DRAIN−TO−SOURCE RESISTANCE (W)
0.005
2345678910
DS(on)
R
2.4
2.2
2.0
1.8
1.6
1.4
1.2
, DRAIN−TO−SOURCE
1.0
DS(on)
R
RESISTANCE (NORMALIZED)
0.8
0.6
−50 −25 0 25 50 75 100 125 150 175
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. V
ID = 15 A
= 10 V
V
GS
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
GS
Figure 5. On−Resistance Variation with
Temperature
, DRAIN−TO−SOURCE RESISTANCE (W)
0.0050
5 1015202530
DS(on)
R
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100000
VGS = 0 V
10000
, LEAKAGE (nA)
1000
DDS
I
100
10 20 30 40 50 60
TJ = 150°C
TJ = 125°C
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
Loading...