ON Semiconductor NVMFD030N06C User Manual

MOSFET - Power, Dual

N-Channel, DUAL SO-8FL

60 V, 29.7 mW, 19 A

NVMFD030N06C

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

• Low Q

• NVMFWD030N06C − Wettable Flank Option for Enhanced Optical

Inspection

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Typical Applications

• Power Tools, Battery Operated Vacuums

• UAV/Drones, Material Handling

• BMS/Storage, Home Automation

to Minimize Conduction Losses

DS(on)

and Capacitance to Minimize Driver Losses

G

V

(BR)DSS

60 V

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R

MAX ID MAX

DS(ON)

29.7 mW @ 10 V

19 A

MAXIMUM RATINGS (T

Parameter Symbol Value Units

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain
Current R
(Notes 1, 3)

Power Dissipation
R

q

JC

Continuous Drain
Current R
(Notes 1, 2, 3)

Power Dissipation
R

q

JA

Pulsed Drain Current

Operating Junction and Storage Temperature
Range

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche
Energy (I

Lead Temperature Soldering Reflow for
Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm

3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.

q

JC

(Note 1)

q

JA

(Notes 1, 2)

= 4.4 Apk)

L

= 25°C unless otherwise stated)

J

Steady

State

Steady

State

Steady

State

Steady

State

TA = 25°C, tp = 10 ms

TC = 25°C

TC = 100°C 13

TC = 25°C

TC = 100°C 11

TA = 25°C

TA = 100°C 5

TA = 25°C

TA = 100°C 1.6

DSS

GS

I

D

P

D

I

D

P

D

I

DM

TJ, T

E

2

, 2 oz. Cu pad.

−55 to

stg

+175

S

AS

T

L

60 V

±20 V

19

23

3.2

63 A

19 A

10 mJ

260 °C

W

7

W

°C

A

A

MARKING
DIAGRAM

1

DFN8 5x6
(SO−8FL)

CASE 506BT

XXXXXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability

XXXXXX

AYWZZ

ORDERING INFORMATION

See detailed ordering, marking and shipping information on
page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2020

January, 2020 − Rev. 0

1 Publication Order Number:

NVMFD030N06C/D

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Case – Steady State (Note 2)

Junction−to−Ambient – Steady State (Note 2)

NVMFD030N06C

R

q

JC

R

q

JA

6.3

46.6

°C/W

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage

V

V

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS

T

J

DSS

GSS

VGS = 0 V, ID = 250 mA

/

ID = 250 mA, ref to 25°C

VGS = 0 V,

V

= 60 V

DS

TJ = 25°C 10 mA

TJ = 125°C 250

VDS = 0 V, VGS = 20 V 100 nA

60 V

−7.9 mV/°C

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Negative Threshold Temperature
Coefficient

V

V

GS(TH)

GS(TH)

Drain−to−Source On Resistance R

Forward Transconductance g

Gate Resistance R

DS(on)

FS

G

/ T

VGS = VDS, ID = 13 mA

J

ID = 13 mA, ref to 25°C

VGS = 10 V, ID = 3 A 24.7 29.7

VDS = 5 V, ID = 3 A 8.5 S

TA = 25°C 1.5

2.0 4.0 V

−7.8 mV/°C

mW

W

CHARGES & CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

VGS = 0 V, f = 1 MHz, VDS = 30 V

VGS = 10 V, VDS = 48 V, ID = 3 A

255

173

4.4

4.7

1.1

1.7

0.54

pF

nC

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

t

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

d(ON)

r

f

VGS = 10 V, VDS = 48 V,

= 3 A, RG = 6 W

I

D

5.7

1.2

8.7

2.3

ns

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Voltage

Reverse Recovery Time t

Charge Time ta 11

Discharge Time tb 10

Reverse Recovery Charge Q

V

SD

RR

VGS = 0 V,

I

= 3 A

S

TJ = 25°C 0.82 1.2

TJ = 125°C 0.68

21

V

ns

VGS = 0 V, dIS/dt = 100 A/ms,

V

= 30 V, IS = 3 A

DS

RR

9.7 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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NVMFD030N06C

TYPICAL CHARACTERISTICS

60

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

50

45

40

35

VGS = 10 V to 8.0 V

7.0 V

6.0 V

5.0 V

4.5 V

3.6 V

43

TJ = 25°C

= 3 A

I

D

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

5210

0

36

32

28

1

TJ = 25°C

TJ = −55°C

TJ = 25°C

TJ = 125°C

3205

VGS = 10 V

4

30

25

, DRAIN−TO−SOURCE RESISTANCE (mW)

20

DS(on)

R

, NORMALIZED DRAIN−TO−

SOURCE RESISTANCE

DS(on)

R

5

6

VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)

87 15

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

2.5
VGS = 10 V

= 3 A

I

2.0

1.5

1.0

0.5

D

0

50

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Temperature

24

, DRAIN−TO−SOURCE RESISTANCE (mW)

1091224963

20

DS(on)

R

18 21

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

10K

TJ = 175°C

1K

TJ = 150°C

TJ = 125°C

100

10

1

TJ = 85°C

TJ = 25°C

25

554535155

, LEAKAGE (nA)

DSS

I

150

175

12510075250−25−50

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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