ON Semiconductor NVJS4151P User Manual

NVJS4151P

MOSFET – Power, Single

P-Channel, Trench, SC-88

-20 V, -4.1 A

Features

• Leading Trench Technology for Low R

Extending Battery Life

DS(ON)

• SC−88 Small Outline (2x2 mm) for Maximum Circuit Board

Utilization, Same as SC−70−6

• Gate Diodes for ESD Protection

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• High Side Load Switch

• Cell Phones, Computing, Digital Cameras, MP3s and PDAs

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain

Current (Note 1)

Power Dissipation

(Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

ESD Human Body Model (HBM) ESD 4000 V

THERMAL RESISTANCE RATINGS (Note 1)

Parameter

Junction−to−Ambient – Steady State

Junction−to−Ambient − t ≤ 5 s

Junction−to−Lead – Steady State

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).

= 25°C unless otherwise stated)

J

Symbol Value Unit

DSS

GS

Steady

State

t ≤ 5 s TA = 25 °C −4.1

Steady

State

TA = 25 °C

TA = 85 °C −2.3

TA = 25 °C P

tp = 10 ms

I

D

D

I

DM

T

STG

S

T

L

Symbol Max Unit

R

q

JA

R

q

JA

R

q

JL

−20 V

±12 V

−3.2

1.2 W

−13 A

−55 to

150

−0.8 A

260 °C

125

75

45

A

°C

°C/W

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V

(BR)DSS

−20 V

R

Typ ID Max

DS(on)

55 mW @ −4.5 V

70 mW @ −2.5 V

180 mW @ −1.8 V

−4.1 A

SC−88 (SOT−363)

D

1

D

2

G

3

Top View

D

6

D

5

S

4

MARKING DIAGRAM &

PIN ASSIGNMENT

DDS

1

SC−88/SOT−363

CASE 419B

VTY = Device Code
M = Date Code
G = Pb−Free Package

(Note: Microdot may be in either location)

6

VTY M G

G

1

DDG

ORDERING INFORMATION

Device Package Shipping

NVJS4151PT1G SC−88

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

3000 / Tape & Reel

†

© Semiconductor Components Industries, LLC, 2014

July, 2019 − Rev. 1

1 Publication Order Number:

NVJS4151P/D

NVJS4151P

ELECTRICAL CHARACTERISTICS (T

Parameter

=25°C unless otherwise stated)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V

V

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

V

V

GS

V

V

V

= 0 V, I

GS

= −16 V,

= 0 V

DS

= 0 V, V

DS

= 0 V, V

DS

= −250 mA

D

T

= 25°C −1.0 mA

J

T

= 85°C −5.0

J

= ±4.5 V ±1.5

GS

= ±12 V ±10 mA

GS

−20 V

−12 mV/°C

mA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Negative Threshold Temperature

Coefficient

V

V

GS(TH)/TJ

Drain−to−Source On Resistance R

Forward Transconductance g

GS(TH)

DS(on)

FS

V

= VDS, ID = −250 mA

GS

V

= −4.5 V, I

GS

V

= −2.5 V, I

GS

VGS = −1.8 V, I

V

= −10 V, I

GS

= −2.9 A 55 67

D

= −2.4 A 70 85

D

= −1.0 A 180 205

D

= −3.3 A 12 S

D

−0.40 −1.2 V

4.0 mV/°C

mW

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

C

ISS

OSS

RSS

G(TOT)

GS

GD

V

= 0 V, f = 1.0 MHz,

GS

V

DS

V

= −4.5 V, V

GS

I

D

= −10 V

DS

= −3.3 A

= −10 V,

850

160

110

10

1.5

2.8

pF

nC

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

t

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

d(ON)

r

f

V

GS

I

D

= −4.5 V, V
= −1.0 A, R

= −10 V,

DD

= 6.0 W

G

0.85 ms

1.7

2.7

4.2

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

V

Reverse Recovery Time t

Charge Time T

Discharge Time T

Reverse Recovery Charge Q

RR

SD

RR

V

GS

V

a

b

GS

= 0 V, I

T

J

S

= 25°C

= −1.3 A,

= 0 V, dIS/dt = 100

A/ms,
= −1.3 A

I

S

−0.75 −1.2 V

63

9.0

54

0.23 nC

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

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NVJS4151P

TYPICAL ELECTRICAL CHARACTERISTICS

4

VGS = −1.8 V

TJ = 25°C

VGS = −2.4 V

3

VGS = −2.0 V

VGS = −1.6 V

VGS = −2.8 V to 6.0 V

.

VGS = −1.4 V

VGS = −1.2 V

, DRAIN CURRENT (A)

D

−I

2

1

VGS = −1.0 V

0

02468

−V

, DRAIN−TO−SOURCE VOLTAGE (V)

DS

Figure 1. On−Region Characteristics

0.5
ID = −3.3 A

= 25°C

T

0.4

0.3

0.2

J

5

VDS w −10 V

4

3

2

, DRAIN CURRENT (A)

D

1

−I

0

01234

, DRAIN−TO−SOURCE VOLTAGE (V)

−V

DS

Figure 2. On−Region Characteristics

0.6

TJ = 25°C

0.5

0.4

0.3

(W)

0.2

VGS = −1.8 V

0.1

, DRAIN−TO−SOURCE RESISTANCE (W)

0

(on)

0246

RDS

, GATE−TO−SOURCE VOLTAGE (V)

−V

GS

, DRAIN−TO−SOURCE RESISTANCE

(on)

RDS

Figure 3. On−Resistance versus

Gate−to−Source Voltage

1.7
VGS = −4.5 V

= −2.9 A

I

D

1.5

1.3

1.1

DRAIN−TO−SOURCE

0.9

DS(on),

R

RESISTANCE (NORMALIZED)

0.7

−50 −25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

100000

Figure 5. On−Resistance Variation with

Temperature

0.1

0

VGS = −4.5 V

VGS = −2.5 V

12345

, DRAIN CURRENT (A)

−I

D

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

VGS = 0 V

TJ = 150°C

10000

, LEAKAGE (nA)

1000

DSS

−I

100

048121620

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 6. Drain−to−Source Leakage Current

versus Voltage

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