ON Semiconductor NTD6416AN, NVD6416AN User Manual

MOSFET – Power,

N-Channel

100 V, 17 A, 81 mW

NTD6416AN, NVD6416AN

Features

• Low R

• High Current Capability

• 100% Avalanche Tested

• NVD Prefix for Automotive and Other Applications Requiring

• These Devices are Pb−Free and are RoHS Compliant

DS(on)

Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable

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I

V

(BR)DSS

100 V 81 mW @ 10 V 17 A

R

DS(on)

MAX

D

D

(Note 1)

MAX

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage − Continuous V

Continuous Drain
Current

Power Dissipation Steady

Pulsed Drain Current

Operating and Storage Temperature Range TJ, T

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche
Energy (V
I

L(pk)

Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

= 50 Vdc, VGS = 10 Vdc,

DD

= 17 A, L = 0.3 mH, RG = 25 W)

= 25°C unless otherwise noted)

J

Steady

State

State

TC = 25°C

TC = 100°C 11

TC = 25°C P

tp = 10 ms

Symbol Value Unit

stg

100 V

±20 V

17

71 W

62 A

−55 to
+175

17 A

43 mJ

260 °C

A

°C

I

E

DSS

GS

I

D

D

DM

S

AS

T

L

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Case (Drain) Steady State

Junction−to−Ambient (Note 1)

1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).

R

q

JC

R

q

JA

2.1

40

°C/W

G

2

1

3

DPAK

CASE 369AA

STYLE 2

4

N−Channel

S

1

2

IPAK

CASE 369D

STYLE 2

4

3

MARKING DIAGRAM

& PIN ASSIGNMENTS

4 Drain

AYWW6416ANG

1

Gate

Drain

A = Assembly Location*
Y = Year
WW = Work Week
6416AN = Device Code
G = Pb−Free Package

* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.

3

2

Source

Gate

1

4 Drain

AYWW6416ANG

3
Source

2

Drain

© Semiconductor Components Industries, LLC, 2014

April, 2020 − Rev. 4

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of
this data sheet.

1 Publication Order Number:

NTD6416AN/D

NTD6416AN, NVD6416AN

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise noted)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage

V

(BR)DSS

V

(BR)DSS/TJ

VGS = 0 V, ID = 250 mA

100 V

112 mV/°C

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

DSS

GSS

VGS = 0 V,

V

= 100 V

DS

VDS = 0 V, VGS = "20 V ±100 nA

TJ = 25°C 1.0 mA

TJ = 125°C 10

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Negative Threshold Temperature

V

GS(TH)

V

GS(TH)/TJ

VGS = VDS, ID = 250 mA

2.0 4.0 V

7.7 mV/°C

Coefficient

Drain−to−Source On−Resistance R

Forward Transconductance g

DS(on)

FS

VGS = 10 V, ID = 17 A 73 81

VDS = 5 V, ID = 10 A 12

mW

S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

G(TOT)

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Plateau Voltage V

Gate Resistance R

ISS

OSS

RSS

G(TH)

GS

GD

GP

G

VGS = 0 V, f = 1.0 MHz, VDS = 25 V

VGS = 10 V, VDS = 80 V, ID = 17 A

620

110

50

20

1.0

3.6

10

5.8 V

2.4

pF

nC

W

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

t

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(on)

r

d(off)

f

VGS = 10 V, VDD = 80 V,

= 17 A, RG = 6.1 W

I

D

9.2

22

24

20

ns

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

V

SD

rr

a

b

RR

VGS = 0 V, IS = 17 A

VGS = 0 V, dIS/dt = 100 A/ms,

I

= 17 A

S

TJ = 25°C 0.85 1.2

TJ = 125°C 0.7

56

41

15

135 nC

V

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

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2

NTD6416AN, NVD6416AN

TYPICAL CHARACTERISTICS

40

TJ = 25°C

30

10 V

7.5 V

6.5 V

6.0 V

20

5.5 V

, DRAIN CURRENT (A)

10

D

I

0

5.0 V

4.5 V

0246810

V

, DRAIN−TO−SOURCE VOLTAGE (V)

DS

Figure 1. On−Region Characteristics

0.11

ID = 17 A

= 25°C

T

0.10

0.09

J

40

VDS w 10 V

35

30

25

20

15

, DRAIN CURRENT (A)

10

D

I

TJ = 125°C

TJ = 25°C

5

0

TJ = −55°C

2345678

V

, GATE−TO−SOURCE VOLTAGE (V)

GS

Figure 2. Transfer Characteristics

0.25
VGS = 10 V

0.20

0.15

TJ = 175°C

TJ = 125°C

0.08

0.07

, DRAIN−TO−SOURCE RESISTANCE (W)

0.06
5678910

DS(on)

R

, GATE−TO−SOURCE VOLTAGE (V)

V

GS

Figure 3. On−Region versus Gate Voltage

3

ID = 17 A

= 10 V

V

GS

2.5

2

1.5

(NORMALIZED)

1

, DRAIN−TO−SOURCE RESISTANCE

0.5

−50 −25 0 25 50 75 100 125 150 175

DS(on)

R

T

, JUNCTION TEMPERATURE (°C)

J

Figure 5. On−Resistance Variation with

Temperature

0.10

TJ = 25°C

0.05

, DRAIN−TO−SOURCE RESISTANCE (W)

TJ = −55°C

0.00

DS(on)

R

10 20812

I

, DRAIN CURRENT (A)

D

14 16 18

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

10000

, LEAKAGE (nA)

DSS

I

VGS = 0 V

1000

TJ = 150°C

100

TJ = 125°C

10

10 20 30 40 50 60 70 80 90 100

, DRAIN−TO−SOURCE VOLTAGE (V)

V

DS

Figure 6. Drain−to−Source Leakage Current

versus Voltage

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