ON Semiconductor NTA4001N, NVA4001N User Manual

NTA4001N, NVA4001N

MOSFET – Single,

N-Channel, Gate ESD
Protection, Small Signal,
SC-75

20 V, 238 mA

Features

• Low Gate Charge for Fast Switching

• Small 1.6 x 1.6 mm Footprint

• ESD Protected Gate

• AEC−Q101 Qualified and PPAP Capable − NVA4001N

• These Devices are Pb−Free and are RoHS Compliant

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V

(BR)DSS

20 V 238 mA

R

DS(on)

Typ @ V

1.5 W @ 4.5 V

2.2 W @ 2.5 V

GS

3

ID MAX

(Note 1)

Applications

• Power Management Load Switch

• Level Shift

• Portable Applications such as Cell Phones, Media Players,

Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc.

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain
Current (Note 1)

Power Dissipation
(Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Continuous Source Current (Body Diode) I

Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

= 25°C unless otherwise stated)

J

Symbol Value Unit

DSS

GS

Steady State = 25°C I

Steady State = 25°C P

tP v 10 ms

T

I

DM

STG

SD

T

D

D

L

20 V

±10 V

238 mA

300 mW

714 mA

−55 to
150

238 mA

260 °C

°C

1

PIN CONNECTIONS

Gate31

Source

SC−75 / SOT−416

CASE 463

2

3

2

1

STYLE 5

TF = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)

N−Channel

SC−75 (3−Leads)

(Top View)

MARKING DIAGRAM

TF MG

1

2

Drain

3

G

2

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient – Steady State (Note 1)

1. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq.
[1 oz] including traces).

© Semiconductor Components Industries, LLC, 2011

May, 2019 − Rev. 2

R

q

JA

416 °C/W

1 Publication Order Number:

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.

NTA4001N/D

NTA4001N, NVA4001N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

DSS

GSS

VGS = 0 V, ID = 100 mA

VGS = 0 V, VDS = 20 V 1.0

VDS = 0 V, VGS = ±10 V ±100

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Drain−to−Source On Resistance R

V

GS(TH)

DS(on)

VDS = 3 V, ID = 100 mA

VGS = 4.5 V, ID = 10 mA 1.5 3.0

VGS = 2.5 V, ID = 10 mA 2.2 3.5

Forward Transconductance g

FS

CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

C

ISS

OSS

RSS

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(ON)

r

d(OFF)

f

VGS = 4.5 V, VDS = 5 V,

I

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

V

SD

2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

20 V

mA

mA

0.5 1.0 1.5 V

W

VDS = 3 V, ID = 10 mA 80 mS

11.5 20

VDS = 5 V, f = 1 MHz,

V

= 0 V

GS

10 15

pF

3.5 6.0

13 ns

15

= 10 mA, RG = 10 W

D

98

ns

60

VGS = 0 V, IS = 10 mA 0.66 0.8 V

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2