ON Semiconductor NUF8152WU Technical data
NUF8152MU
8-Channel EMI Filter with
Integrated ESD Protection
The NUF8152MU is a eight−channel (C−L−R−C) Pi−style EMI
filter array with integrated ESD protection. Its typical component
values of R = 28 , C = 17 pF and L = 1.0 nH deliver a cutoff
frequency of 125 MHz and stop band attenuation greater than −25 dB
from 800 MHz to 3.0 GHz.
This performance makes the part ideal for parallel interfaces with
data rates up to 83 Mbps in applications where wireless interference
must be minimized. The specified attenuation range is very effective
in minimizing interference from 2G/3G, GPS, Bluetooth® and
WLAN signals.
The NUF8152MU is available in the low−profile 16−lead 1.2 mm x
3.5 mm x 0.5 mm UDFN16 surface mount package.
Features/Benefits
• ±13 kV ESD Protection on each channel (IEC61000−4−2 Level 4,
Contact Discharge)
• R/C Values of 28 and 17 pF and L = 1.0 nH Deliver Exceptional
S21 Performance Characteristics of 125 MHz f
Band Attenuation from 800 MHz to 3.0 GHz
• Integrated EMI/ESD System Solution in UDFN Package Offers
Exceptional Cost, System Reliability and Space Savings
• This is a Pb−Free Device
Applications
• EMI Filtering for LCD and Camera Data Lines
• EMI Filtering and Protection for I/O Ports and Keypads
and −25 dB Stop
3dB
http://onsemi.com
http://onsemi.com
MARKING
16
1
UDFN16
CASE 517AF
815 = Specific Device Code
M = Month Code
G = Pb−Free Package
DIAGRAM
815 M
G
1
ORDERING INFORMATION
Device Package Shipping
NUF8152MUT2G UDFN16
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3000 / Tape & Reel
†
Filter + ESD
n
L = 1 nH
C
= 17 pF C
d
See Table 1 for pin description
R = 28
= 17 pF
d
Figure 1. Electrical Schematic
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 1
Filter + ESD
0
-5
-10
-15
-20
n
-25
S21 (dB)
-30
-35
-40
-45
-50
1.0E + 6 10.0E + 6 100.0E + 6 1.0E + 9 10.0E + 9
FREQUENCY (Hz)
Figure 2. Typical Insertion Loss Characteristics
(S21 Measurement)
1 Publication Order Number:
NUF8152MU/D
NUF8152MU
Table 1. FUNCTIONAL PIN DESCRIPTION
Filter Device Pins Description
Filter 1 1 & 16 Filter + ESD Channel 1
Filter 2 2 & 15 Filter + ESD Channel 2
Filter 3 3 & 14 Filter + ESD Channel 3
Filter 4 4 & 13 Filter + ESD Channel 4
Filter 5 5 & 12 Filter + ESD Channel 5
Filter 6 6 & 11 Filter + ESD Channel 6
Filter 7 7 & 10 Filter + ESD Channel 7
Filter 8 8 & 9 Filter + ESD Channel 8
Ground Pad GND Ground
MAXIMUM RATINGS
Parameter Symbol Value Unit
ESD Discharge IEC61000−4−2 Contact Discharge V
Operating Temperature Range T
Storage Temperature Range T
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) T
PP
OP
STG
L
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
13 kV
−40 to 85 °C
−55 to 150 °C
260 °C
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
J
Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Reverse Working Voltage V
Breakdown Voltage V
Leakage Current I
RWM
BR
R
IR = 1.0 mA 6.0 7.0 8.0 V
V
= 3.3 V 100 nA
RWM
5.0 V
Inductance L 1.0 3.0 nH
Resistance R
Diode Capacitance C
Line Capacitance C
3 dB Cut−Off Frequency (Note 1) f
6 dB Cut−Off Frequency f
3dB
6dB
A
d
L
VR = 2.5 V, f = 1.0 MHz 17 pF
VR = 2.5 V, f = 1.0 MHz 34 pF
Above this frequency,
appreciable attenuation occurs
Above this frequency,
appreciable attenuation occurs
28 36
125 MHz
210 MHz
1. 50 source and 50 load termination.
http://onsemi.com
2
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