ON Semiconductor NUF6401MN Technical data

NUF6401MN

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6-Channel EMI Filter with Integrated ESD Protection

The NUF6401MN is a six−channel (C−R−C) Pi−style EMI filter

array with integrated ESD protection. Its typical component values of R = 100  and C = 17 pF deliver a cutoff frequency of 110 MHz and stop band attenuation greater than −30 dB from 800 MHz to 3.0 GHz.

This performance makes the part ideal for parallel interfaces with data rates up to 74 Mbps in applications where wireless interference must be minimized. The specified attenuation range is very effective in minimizing interference from 2G/3G, GPS, Bluetooth® and WLAN signals.

The NUF6401MN is available in the low−profile 12−lead 1.35 mm x 3.0 mm DFN12 surface mount package.

Features/Benefits

• ±8.0 kV ESD Protection on each channel (IEC61000−4−2 Level 4,

Contact Discharge)

• R/C Values of 100  and 17 pF deliver Exceptional S21 Performance

Characteristics of 110 MHz f from 800 MHz to 3.0 GHz

• Integrated EMI/ESD System Solution in DFN Package Offers

Exceptional Cost, System Reliability and Space Savings

• This is a Pb−Free Device

Applications

• EMI Filtering for LCD and Camera Data Lines

• EMI Filtering and Protection for I/O Ports and Keypads

and −30 dB Stop Band Attenuation

3dB

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MARKING DIAGRAM

6401= Specific Device Code

= Month

M G = Pb−Free Package (Note: Microdot may be in either location)

DFN12

CASE 506AD

64 01

ORDERING INFORMATION

Device Package Shipping

NUF6401MNT1G DFN12

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

3000 / Tape & Reel

†

= 17 pF C

R = 100 

= 17 pF

Filter + ESD

See Table 1 for pin description

Figure 1. Electrical Schematic

August, 2009 − Rev. 7

Filter + ESD

−5

−10

−15

−20

−25

S21 (dB)

−30

−35

−40

−45

1.0E+6 10E+6 100E+6 1.0E+9 10E+9

FREQUENCY (Hz)

Figure 2. Typical Insertion Loss Characteristic

1 Publication Order Number:

NUF6401MN/D

NUF6401MN

4321

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GND

(Bottom View)

Figure 3. Pin Diagram

Table 1. FUNCTIONAL PIN DESCRIPTION

Filter Device Pins Description

Filter 1 1 & 12 Filter + ESD Channel 1

Filter 2 2 & 11 Filter + ESD Channel 2

Filter 3 3 & 10 Filter + ESD Channel 3

Filter 4 4 & 9 Filter + ESD Channel 4

Filter 5 5 & 8 Filter + ESD Channel 4

Filter 6 6 & 7 Filter + ESD Channel 4

Ground Pad GND Ground

MAXIMUM RATINGS

Parameter Symbol Value Unit

ESD Discharge IEC61000−4−2 Contact Discharge V

DC Power per Resistor P

DC Power per Package P

Operating Temperature Range T

Storage Temperature Range T

Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) T

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

9101112 8 7

STG

8.0 kV

100 mW

600 mW

−40 to 85 °C

−55 to 150 °C

260 °C

ELECTRICAL CHARACTERISTICS (T

Parameter

Maximum Reverse Working Voltage V

Breakdown Voltage V

Leakage Current I

Resistance R

Diode Capacitance C

Line Capacitance C

3 dB Cut−Off Frequency (Note 1) f

6 dB Cut−Off Frequency (Note 1) f

1. 50  source and 50  load termination.

= 25°C unless otherwise noted)

Symbol Test Conditions Min Typ Max Unit

RWM

3dB

6dB

IR = 1.0 mA 6.0 7.0 V

= 3.0 V 100 1000 nA

RWM

IR = 10 mA 85 100 115

VR = 2.5 V, f = 1.0 MHz 17 20 pF

VR = 2.5 V, f = 1.0 MHz 34 40 pF

Above this frequency,

110 MHz

appreciable attenuation occurs

Above this frequency,

175 MHz

appreciable attenuation occurs

5.0 V



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