ON Semiconductor NUF4220MN User Manual
NUF4220MN
Audio EMI Filter, 4 Line, with ESD Protection
NUF4220MN is a 4 line LC EMI filter array designed for audio applications. It offers greater than −30 dB attenuation at frequencies from 800 MHz to 5.0 GHz, with no line loss. This part is a single chip solution for audio interface applications, 2 speaker lines with a microphone line. This device also offers ESD protection−clamping transients from static discharges and ESD protection is provided across all capacitors.
Features
•Provides EMI Filtering and ESD Protection
•Integration of 20 Discretes
•Compliance with IEC61000−4−2 (Level 4) 18 kV (Contact)
•DFN8, 2x2 mm Package
•Moisture Sensitivity Level 1
•ESD Ratings: Machine Model = C
Human Body Model = 3B
•Excellent Line Efficiency with Low Line Resistance < 1.1 W max
•This is a Pb−Free Device*
Applications
•Headset
•MP3s
•PDAs
•Digital Cameras
•Portable DVDs
•Handfree Interface
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
L
1 
8 
C1 C1 
L
2 
7 
C2 C2 
L
3 
6
C3 C3
L
4 
5
C4 C4
(Top View)
MARKING
DIAGRAM
DFN8 |
1 |
R2 MG |
CASE 506AA |
4 |
G |
PLASTIC |
|
1
R2 = Specific Device Code
M = Date Code
G= Pb−Free Package
1 2 3 4
GND
8 |
7 |
6 |
5 |
|
(Bottom View) |
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ORDERING INFORMATION
Device |
Package |
Shipping† |
NUF4220MNT1G |
DFN8 |
3000 / Tape & Reel |
|
(Pb−Free) |
|
|
|
|
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
♥ Semiconductor Components Industries, LLC, 2006 |
1 |
Publication Order Number: |
October, 2006 − Rev. 0 |
|
NUF4220MN/D |
NUF4220MN
MAXIMUM RATINGS
|
Parameter |
Symbol |
Value |
Unit |
|
|
|
|
|
ESD Discharge IEC61000−4−2 |
Contact Discharge |
VPP |
18 |
kV |
Steady−State Power per Inductor |
|
PL |
90 |
mW |
Steady−State Power per Package |
|
PT |
360 |
mW |
Operating Temperature Range |
|
TOP |
−40 to 85 |
°C |
Storage Temperature Range |
|
Tstg |
−55 to 150 |
°C |
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 s) |
TL |
260 |
°C |
|
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter |
Test Conditions |
Symbol |
Min |
Typ |
Max |
Unit |
|
|
|
|
|
|
|
Maximum Reverse Working Voltage |
|
VRWM |
|
|
5.0 |
V |
Breakdown Voltage |
IR = 1.0 mA |
VBR |
6.0 |
7.0 |
8.0 |
V |
Leakage Current |
VRWM = 3.3 V |
IR |
|
|
0.1 |
mA |
Inductance |
|
L |
|
4.9 |
|
nH |
|
|
|
|
|
|
|
Series Resistance |
|
RS |
0.6 |
0.85 |
1.1 |
W |
Capacitance (Note 1, 3) |
|
Cd |
|
205 |
|
pF |
Cut−Off Frequency (Note 2) |
Above this frequency, |
f3dB |
|
16 |
|
MHz |
|
appreciable attenuation occurs |
|
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|
1.Measured at 25°C, VR = 0 V, f = 1.0 MHz.
2.50 W source and 50 W load termination.
3.Total line capacitance is 2 times the diode capacitance (Cd).
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2
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