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NUF4220MN
l
Audio EMI Filter, 4 Line,
with ESD Protection
NUF4220MN is a 4 line LC EMI filter array designed for audio
applications. It offers greater than −30 dB attenuation at frequencies
rom 800 MHz to 5.0 GHz, with no line loss. This part is a single chip
f
solution for audio interface applications, 2 speaker lines with a
microphone line. This device also offers ESD protection−clamping
transients from static discharges and ESD protection is provided
across all capacitors.
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1
L
C1 C1
8
Features
• Provides EMI Filtering and ESD Protection
• Integration of 20 Discretes
• Compliance with IEC61000−4−2 (Level 4)
18 kV (Contact)
• DFN8, 2x2 mm Package
• Moisture Sensitivity Level 1
• ESD Ratings: Machine Model = C
Human Body Model = 3B
• Excellent Line Efficiency with Low Line Resistance < 1.1 max
• This is a Pb−Free Device*
Applications
• Headset
• MP3s
• PDAs
• Digital Cameras
• Portable DVDs
• Handfree Interface
2
C2 C2
3
C3 C3
4
C4 C4
(Top View)
CASE 506AA
1
R2 = Specific Device Code
M = Date Code
G = Pb−Free Package
PLASTIC
L
L
L
DFN8
MARKING
DIAGRAM
1
4
4321
7
6
5
R2 MG
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. 0
1 Publication Order Number:
GND
5678
(Bottom View)
ORDERING INFORMATION
Device Package Shipping
NUF4220MNT1G DFN8
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
3000 / Tape & Ree
NUF4220MN/D
†
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NUF4220MN
MAXIMUM RATINGS
Parameter Symbol Value Unit
ESD Discharge IEC61000−4−2 Contact Discharge V
Steady−State Power per Inductor P
Steady−State Power per Package P
Operating Temperature Range T
Storage Temperature Range T
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 s) T
PP
L
T
OP
stg
L
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Opera t i n g Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
18 kV
90 mW
360 mW
−40 to 85 °C
−55 to 150 °C
260 °C
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise noted)
J
Test Conditions Symbol Min Typ Max Unit
Maximum Reverse Working Voltage V
Breakdown Voltage IR = 1.0 mA V
Leakage Current V
= 3.3 V I
RWM
Inductance
Series Resistance R
Capacitance (Note 1, 3) C
Cut−Off Frequency (Note 2) Above this frequency,
appreciable attenuation occurs
1. Measured at 25°C, VR = 0 V, f = 1.0 MHz.
2. 50 source and 50 load termination.
3. Total line capacitance is 2 times the diode capacitance (C
).
d
RWM
BR
R
L
f
3dB
5.0 V
6.0 7.0 8.0 V
0.1
A
4.9 nH
S
d
0.6 0.85 1.1
205 pF
16 MHz
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NUF4220MN
TYPICAL PERFORMANCE CURVES
(TA = 25°C unless otherwise specified)
0
−5.0
−10
−15
−20
−25
S21 (dB)
−30
−35
−40
−45
1.0E+6 10E+6 100E+6 1.0E+9 10E+9
FREQUENCY (Hz)
Figure 1. Typical Insertion Loss
Characteristics
1.2
1.0
0.8
0
−10
−20
−30
−40
S41 (dB)
−50
−60
−70
−80
10E+6
1.2
1.0
0.8
100E+6 1.0E+9 10E+9
FREQUENCY (MHz)
Figure 2. Typical Analog Crosstalk
0.6
0.4
0.2
NORMALIZED CAPACITANCE
0
0 1.0 2.0 3.0 4.0 5.0
REVERSE BIAS VOLTAGE (V)
Figure 3. Typical Line Capacitance vs.
Reverse Bias Voltage (Normalized to
Capacitance @ 0 V)
0.6
0.4
RESISTANCE ()
0.2
0
−40 −15 10 35 60 85
TEMPERATURE (°C)
Figure 4. Typical Resistance Over Temperature
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
1
SCALE 4:1
2X
NOTE 4
PIN ONE
REFERENCE
2X
C0.10
C0.10
TOP VIEW
DETAIL B
C0.10
C0.08
SIDE VIEW
DETAIL A
1
8
K
e/2
e
BOTTOM VIEW
D
(A3)
D2
A
B
E
A
A1
4
SEATING
C
PLANE
8X
L
E2
5
8X
b
0.10 C
0.05 C
DFN8 2x2, 0.5P
CASE 506AA−01
ISSUE E
L1
CONSTRUCTIONS
CONSTRUCTION
A
BB
NOTE 3
L
DETAIL A
OPTIONAL
MOLD CMPDEXPOSED Cu
DETAIL B
OPTIONAL
DATE 22 JAN 2010
NOTES:
L
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994 .
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.20 MM FROM TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
MILLIMETERS
DIM MIN MAX
A 0.80 1.00
A1 0.00 0.05
A3 0.20 REF
b 0.20 0.30
D 2.00 BSC
D2 1.10 1.30
E 2.00 BSC
E2 0.70 0.90
e 0.50 BSC
0.30 REF
K
L 0.25 0.35
L1 −−− 0.10
GENERIC
MARKING DIAGRAM*
1
XXMG
G
XX = Specific Device Code
M = Date Code
G = Pb−Free Device
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
RECOMMENDED
SOLDERING FOOTPRINT*
8X
0.50
PACKAGE
OUTLINE
1.30
0.90
2.30
1
8X
0.30
DIMENSIONS: MILLIMETERS
0.50
PITCH
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
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98AON18658D
DFN8, 2.0X2.0, 0.5MM PITCH
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