ON Semiconductor NUF4220MN User Manual

NUF4220MN

l

Audio EMI Filter, 4 Line,
with ESD Protection

NUF4220MN is a 4 line LC EMI filter array designed for audio

applications. It offers greater than −30 dB attenuation at frequencies

rom 800 MHz to 5.0 GHz, with no line loss. This part is a single chip

f
solution for audio interface applications, 2 speaker lines with a
microphone line. This device also offers ESD protection−clamping
transients from static discharges and ESD protection is provided
across all capacitors.

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1

L

C1 C1

8

Features

• Provides EMI Filtering and ESD Protection

• Integration of 20 Discretes

• Compliance with IEC61000−4−2 (Level 4)

18 kV (Contact)

• DFN8, 2x2 mm Package

• Moisture Sensitivity Level 1

• ESD Ratings: Machine Model = C

Human Body Model = 3B

• Excellent Line Efficiency with Low Line Resistance < 1.1  max

• This is a Pb−Free Device*

Applications

• Headset

• MP3s

• PDAs

• Digital Cameras

• Portable DVDs

• Handfree Interface

2

C2 C2

3

C3 C3

4

C4 C4

(Top View)

CASE 506AA

1

R2 = Specific Device Code
M = Date Code
G = Pb−Free Package

PLASTIC

L

L

L

DFN8

MARKING
DIAGRAM

1
4

4321

7

6

5

R2 MG

G

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2006

October, 2006 − Rev. 0

1 Publication Order Number:

GND

5678

(Bottom View)

ORDERING INFORMATION

Device Package Shipping

NUF4220MNT1G DFN8

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

3000 / Tape & Ree

NUF4220MN/D

†

NUF4220MN

MAXIMUM RATINGS

Parameter Symbol Value Unit

ESD Discharge IEC61000−4−2 Contact Discharge V
Steady−State Power per Inductor P
Steady−State Power per Package P
Operating Temperature Range T
Storage Temperature Range T
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 s) T

PP

L

T
OP
stg

L

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Opera t i n g Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.

18 kV
90 mW

360 mW

−40 to 85 °C

−55 to 150 °C
260 °C

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise noted)

J

Test Conditions Symbol Min Typ Max Unit

Maximum Reverse Working Voltage V
Breakdown Voltage IR = 1.0 mA V
Leakage Current V

= 3.3 V I

RWM

Inductance
Series Resistance R
Capacitance (Note 1, 3) C
Cut−Off Frequency (Note 2) Above this frequency,

appreciable attenuation occurs

1. Measured at 25°C, VR = 0 V, f = 1.0 MHz.

2. 50  source and 50  load termination.

3. Total line capacitance is 2 times the diode capacitance (C

).

d

RWM

BR
R
L

f

3dB

5.0 V

6.0 7.0 8.0 V

0.1

A

4.9 nH

S
d

0.6 0.85 1.1
205 pF



16 MHz

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