ON Semiconductor NUF4001MU Users manual

NUF4001MU

9

l

s

4-Channel EMI Filter with
Integrated ESD Protection

The NUF4001MU is a four−channel (C−R−C) Pi−style EMI filter
array with integrated ESD protection. Its typical component values of
R = 100  and C = 13 pF deliver a cutoff frequency of 150 MHz and
stop band attenuation greater than −25 dB from 800 MHz to 5.0 GHz.

This performance makes the part ideal for parallel interfaces with
data rates up to 100 Mbps in applications where wireless interference
must be minimized. The specified attenuation range is very effective
in minimizing interference from 2G/3G, GPS, Bluetooth® and
WLAN signals.

The NUF4001MU is available in the low−profile 8−lead 1.2x1.8mm
UDFN8 surface mount package.

Features/Benefits

• ±14 kV ESD Protection on each channel (IEC61000−4−2 Level 4,

Contact Discharge)

• ±16 kV ESD Protection on each channel (HBM)

• R/C Values of 100  and 13 pF deliver Exceptional S21 Performance

Characteristics of 150 MHz f
from 800 MHz to 5.0 GHz

• Integrated EMI/ESD System Solution in UDFN Package Offers

Exceptional Cost, System Reliability and Space Savings

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• EMI Filtering for LCD and Camera Data Lines

• EMI Filtering and Protection for I/O Ports and Keypads

and −25 dB Stop Band Attenuation

3dB

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UDFN8

CASE 517AD

41 = Specific Device Code
M = Month Code
G = Pb−Free Package

MARKING
DIAGRAM

41 M

1

G

ORDERING INFORMATION

Device Package Shipping

NUF4001MUT2G UDFN8

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD801 1/D.

3000 / Tape & Ree

†

C

= 13 pF C

d

R=100 

= 13 pF

d

Filter + ESD

n

See Table 1 for pin description

Figure 1. Electrical Schematic Figure 2. Typical Insertion Loss Curve

© Semiconductor Components Industries, LLC, 2017

February, 2017 − Rev. 8

Filter + ESD

0

−5

−10

−15

−20

n

−25

−30

S21 (dB)

−35

−40

−45

−50

1.0E+6 10.0E+6 100E+6 1.0E+9 10.0E+
FREQUENCY (Hz)

1 Publication Order Number:

NUF4001MU/D

NUF4001MU

14

58

(Bottom View)

Figure 3. Pin Diagram

Table 1. FUNCTIONAL PIN DESCRIPTION

Filter Device Pins Description

Filter 1 1 & 8 Filter + ESD Channel 1
Filter 2 2 & 7 Filter + ESD Channel 2
Filter 3 3 & 6 Filter + ESD Channel 3
Filter 4 4 & 5 Filter + ESD Channel 4

Ground Pad GND Ground

MAXIMUM RATINGS

Parameter Symbol Value Unit

ESD Discharge IEC61000−4−2

Contact Discharge

Machine Model

Human Body Model
Operating Temperature Range T
Storage Temperature Range T
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) T

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.

V

PP

OP

STG

L

14

kV

1.6
16

−40 to 85 °C

−55 to 150 °C
260 °C

ELECTRICAL CHARACTERISTICS (T

Parameter

Maximum Reverse Working Voltage V
Breakdown Voltage V
Leakage Current I
Resistance R
Diode Capacitance C
Line Capacitance C
3 dB Cut−Off Frequency (Note 1) f

6 dB Cut−Off Frequency (Note 1) f

= 25°C unless otherwise noted)

J

Symbol Test Conditions Min Typ Max Unit

RWM

BR
R

A
d
L

3dB

6dB

IR = 1.0 mA 6.0 7.0 8.0 V

V

= 3.3 V 100 nA

RWM

IR = 10 mA 85 100 115
VR = 2.5 V, f = 1.0 MHz 10 13 16 pF
VR = 2.5 V, f = 1.0 MHz 20 26 32 pF

Above this frequency,

150 MHz

appreciable attenuation occurs

Above this frequency,

260 MHz

appreciable attenuation occurs

5.0 V



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. 50  source and 50  load termination.

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NUF4001MU

0

S21 (dB)

NORMALIZED CAPACITANCE

0

9

TYPICAL PERFORMANCE CURVES

(TA= 25°C unless otherwise specified)

−5

−10

−15

−20

−25

−30

−35

−40

−45

−50

1.0E+6 10.0E+6 100E+6 1.0E+9 10.0E+9
FREQUENCY (Hz)

Figure 4. Insertion Loss Characteristic

2.0

1.5

1.0

0.5

0

0 1.0 2.0 3.0 4.0 5.0

REVERSE VOLTAGE (V)

Figure 6. Typical Capacitance vs.

Reverse Biased Voltage

(Normalized Capacitance Cd at 2.5 V)

−10

−20

−30

S41 (dB)

−40

−50

−60

10.0E+6 100E+6 1.0E+9 10.0E+
FREQUENCY (Hz)

Figure 5. Insertion Loss Characteristic

110
108
106
104
102
100

98
96

RESISTANCE ()

94
92
90

−40 −20 0 20 40 60 80
TEMPERATURE (°C)

Figure 7. Typical Resistance over Temperature

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