ON Semiconductor NTUD3129P User Manual

NTUD3129P
Small Signal MOSFET
-20 V, -180 mA, Dual P-Channel,
1.0 x 1.0 mm SOT-963 Package
Dual P-Channel MOSFET
Offers a Low R
Package
Solution in the Ultra Small 1.0 x 1.0 mm
DS(ON)
1.5V Gate Voltage Rating
Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
Thin Environments such as Portable Electronics.
These are Pb-Free Devices
Applications
General Purpose Interfacing Switch
Optimized for Power Management in Ultra Portable Equipment
MAXIMUM RATINGS (T
Parameter Symbol Value Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Continuous Drain Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain Current
Operating Junction and Storage Temperature TJ,
Source Current (Body Diode) (Note 2) I
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
2. Pulse Test: pulse width v300 ms, duty cycle v2%
= 25°C unless otherwise specified)
J
DSS
GS
Steady
State
t v 5 s
Steady
State
t v 5 s
TA = 25°C
TA = 85°C -100
TA = 25°C -180
TA = 25°C P
tp = 10 ms
T
I
I
DM
STG
T
D
D
S
L
-20 V
±8 V
-140
-125
mW
-200
-600 mA
-55 to 150
-200 mA
260 °C
mA
°C
V
(BR)DSS
-20 V
G1
S
G
D
SOT-963
CASE 527AA
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R
DS(ON)
5.0 W @ -4.5 V
7.0 W @ -2.5 V
10 W @ -1.8 V
14 W @ -1.5 V
D1
S1
PINOUT: SOT-963
1
1
2
1
3
2
MAX ID Max
G2
P-Channel
MOSFET
Top View
MARKING DIAGRAM
1
-0.18 A
D2
S2
D
6
G
5
S
4
R MG
1
2
2
© Semiconductor Components Industries, LLC, 2007
June, 2007 - Rev. 0
R = Specific Device Code M = Date Code G = Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.
1 Publication Order Number:
NTUD3129P/D
NTUD3129P
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction-to-Ambient – Steady State (Note 3)
R
q
JA
Junction-to-Ambient – t = 5 s (Note 3) 600
3. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
1000
°C/W
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
J
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current I
V
(BR)DSS
DSS
VGS = 0 V, ID = -250 mA
VGS = 0 V, VDS = -5.0 V
VGS = 0 V, VDS = -16 V TJ = 25°C -100
Gate-to-Source Leakage Current I
GSS
VDS = 0 V, VGS = ±5.0 V ±100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Drain-to-Source On Resistance R
V
GS(TH)
DS(ON)
VGS = VDS, ID = -250 mA
VGS = -4.5 V, ID = -100 mA 4.0 5.0
VGS = -2.5 V, ID = -50 mA 5.0 7.0
VGS = -1.8 V, ID = -20 mA 6.5 10
VGS = -1.5 V, ID = -10 mA 7.5 14
VGS = -1.2 V, ID = -1.0 mA 11.5
Forward Transconductance g
Source-Drain Diode Voltage V
FS
SD
VDS = -5.0 V, ID = -125 mA 0.26 S
VGS = 0 V, ID = -10 mA -0.65 -1.0 V
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
C
ISS
OSS
RSS
f = 1 MHz, VGS = 0 V
V
DS
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
Turn-On Delay Time
Rise Time t
Turn-Of f Delay Time t
Fall Time t
t
d(ON)
r
d(OFF)
f
VGS = -4.5 V, VDD = -15 V,
= -180 mA, RG = 2.0 W
I
D
4. Switching characteristics are independent of operating junction temperatures
= -15 V
-20 V
TJ = 25°C -50
TJ = 85°C -200
-0.4 -1.0 V
12
2.7
1.0
20
37
112
97
nA
W
pF
ns
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2
NTUD3129P
TYPICAL PERFORMANCE CURVES
0.36
0.32
0.28
0.24
0.20
0.16
0.12
0.08
DRAIN CURRENT (AMPS)
D,
I
0.04
0
0
1
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
Figure 1. On-Region Characteristics
12
8
VGS = 3.5 V to 5 V
3.0 V
TJ = 25°C
2.5 V
0.36
0.32
0.28
VDS 5 V
0.24
2.0 V
0.20
0.16
1.5 V
1.0 V
0.12
DRAIN CURRENT (AMPS)
0.08
D,
I
0.04
0
25
34
0
1
VGS, GATE-T O-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID = 180 mA
TJ = 25°C
6
TJ = 25°C
5
4
3
TJ = -55°C
2
VGS = 2.5 V
VGS = 4.5 V
TJ = 25°C
3
TJ = 125°C
4
5
4
2
1
DRAIN-T O-SOURCE RESISTANCE (W)
0
035
DS(on),
R
1
V
, GATE-T O-SOURCE VOLTAGE (VOLTS)
GS
2
4 0.30.25
Figure 3. On-Resistance vs. Gate Voltage
1.75
ID = 180 mA
1.5 V
= 4.5 V
GS
1.25
DRAIN-T O-SOURCE RESISTANCE (W)
0
DS(on),
R
0.1 0.40.05 0.2 0.350.15
Figure 4. On-Resistance vs. Drain Current and
1000
VGS = 0 V
100
1.0
0.75
DRAIN-T O-SOURCE
0.5
DS(on),
0.25
R
RESISTANCE (NORMALIZED)
0
-50 0-25 25
50 150
75
TJ, JUNCTION TEMPERATURE (°C)
125100
, LEAKAGE (nA)
10
DSS
I
1
0
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Gate Voltage
TJ = 150°C
TJ = 125°C
12
1648
20
Figure 5. On-Resistance Variation with
Temperature
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Figure 6. Drain-to-Source Leakage Current
vs. Voltage
3
NTUD3129P
TYPICAL PERFORMANCE CURVES
16
C
iss
12
VGS = 0 V T
= 25°C
14 16
J
C
oss
C
rss
20
18
8
C, CAPACITANCE (pF)
4
0
02 12
46810
GATE-T O-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation Figure 8. Resistive Switching Time
0.18
VGS = 0 V
0.16 T
= 25°C
0.14
0.12
0.10
0.08
0.06
0.04
, SOURCE CURRENT (AMPS)
S
I
0.02
J
0
0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
1000
VDD = 10 V I
= 180 mA
D
= 4.5 V
V
GS
100
t, TIME (ns)
10
1
1 10 100
, GATE RESISTANCE (OHMS)
R
G
Variation vs. Gate Resistance
0.60.2
0.80.4
1.0
t
d(off)
t
f
t
r
t
d(on)
Figure 9. Diode Forward Voltage vs. Current
ORDERING INFORMATION
Device Package Shipping
NTUD3129PT5G SOT-963
8000 / Tape & Reel
(Pb-Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SCALE 4:1
SOT963
CASE 527AA01
ISSUE D
DATE 30 JUL 2008
STYLE 1:
PIN 1. EMITTER 1
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
STYLE 4:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
STYLE 7:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. ANODE
6. CATHODE
STYLE 10:
PIN 1. CATHODE 1
2. N/C
3. CATHODE 2
4. ANODE 2
5. N/C
6. ANODE 1
D
456
12 3
e
Y
X
E
b
6X
STYLE 2:
PIN 1. EMITTER 1
2. EMITTER2
3. BASE 2
4. COLLECTOR 2
5. BASE 1
6. COLLECTOR 1
STYLE 5:
PIN 1. CATHODE
2. CATHODE
3. ANODE
4. ANODE
5. CATHODE
6. CATHODE
STYLE 8:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
A
L
H
E
C
X0.08
Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
MILLIMETERS
DIM MIN NOM MAX
A 0.40 0.45 0.50
b 0.10 0.15 0.20 C 0.05 0.10 0.15 D 0.95 1.00 1.05
E 0.75 0.80 0.85 e 0.35 BSC L 0.05 0.10 0.15
H
E
0.95 1.00 1.05
INCHES
MIN NOM MAX
0.016 0.018 0.020
0.004 0.006 0.008
0.002 0.004 0.006
0.037 0.039 0.041
0.03 0.032 0.034
0.014 BSC
0.002 0.004 0.006
0.037 0.039 0.041
GENERIC
STYLE 3:
PIN 1. CATHODE 1
2. CATHODE 1
3. ANODE/ANODE 2
4. CATHODE 2
5. CATHODE 2
6. ANODE/ANODE 1
STYLE 6:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
STYLE 9:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
0.90
0.0354
MARKING DIAGRAM*
XM
1
X = Specific Device Code M = Month Code
*This information is generic. Please refer
to device data sheet for actual part marking. PbFree indicator, “G” or microdot “ G”, may or may not be present.
SOLDERING FOOTPRINT*
0.35
0.35
0.014
0.014
0.20
0.008
0.20
0.008
SCALE 20:1
ǒ
inches
mm
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
98AON18698D
SOT963, 1X1, 0.35P
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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