•Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
Thin Environments such as Portable Electronics.
•These are Pb-Free Devices
Applications
•General Purpose Interfacing Switch
•Optimized for Power Management in Ultra Portable Equipment
MAXIMUM RATINGS (T
ParameterSymbolValueUnit
Drain-to-Source VoltageV
Gate-to-Source VoltageV
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain Current
Operating Junction and Storage TemperatureTJ,
Source Current (Body Diode) (Note 2)I
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using the minimum recommended pad size,
1 oz Cu.
R= Specific Device Code
M= Date Code
G= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
1Publication Order Number:
NTUD3129P/D
NTUD3129P
THERMAL RESISTANCE RATINGS
ParameterSymbolMaxUnit
Junction-to-Ambient – Steady State (Note 3)
R
q
JA
Junction-to-Ambient – t = 5 s (Note 3)600
3. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
1000
°C/W
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
J
ParameterSymbolTest ConditionMinTypMaxUnit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain CurrentI
V
(BR)DSS
DSS
VGS = 0 V, ID = -250 mA
VGS = 0 V, VDS = -5.0 V
VGS = 0 V, VDS = -16 VTJ = 25°C-100
Gate-to-Source Leakage CurrentI
GSS
VDS = 0 V, VGS = ±5.0 V±100nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Drain-to-Source On ResistanceR
V
GS(TH)
DS(ON)
VGS = VDS, ID = -250 mA
VGS = -4.5V, ID = -100 mA4.05.0
VGS = -2.5V, ID = -50 mA5.07.0
VGS = -1.8 V, ID = -20 mA6.510
VGS = -1.5V, ID = -10 mA7.514
VGS = -1.2V, ID = -1.0 mA11.5
Forward Transconductanceg
Source-Drain Diode VoltageV
FS
SD
VDS = -5.0 V, ID = -125 mA0.26S
VGS = 0 V, ID = -10 mA-0.65-1.0V
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output CapacitanceC
Reverse Transfer CapacitanceC
C
ISS
OSS
RSS
f = 1 MHz, VGS = 0 V
V
DS
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
Turn-On Delay Time
Rise Timet
Turn-Of f Delay Timet
Fall Timet
t
d(ON)
r
d(OFF)
f
VGS = -4.5 V, VDD = -15 V,
= -180 mA, RG = 2.0 W
I
D
4. Switching characteristics are independent of operating junction temperatures
= -15 V
-20V
TJ = 25°C-50
TJ = 85°C-200
-0.4-1.0V
12
2.7
1.0
20
37
112
97
nA
W
pF
ns
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2
NTUD3129P
TYPICAL PERFORMANCE CURVES
0.36
0.32
0.28
0.24
0.20
0.16
0.12
0.08
DRAIN CURRENT (AMPS)
D,
I
0.04
0
0
1
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
Figure 1. On-Region Characteristics
12
8
VGS = 3.5 V to 5 V
3.0 V
TJ = 25°C
2.5 V
0.36
0.32
0.28
VDS ≥ 5 V
0.24
2.0 V
0.20
0.16
1.5 V
1.0 V
0.12
DRAIN CURRENT (AMPS)
0.08
D,
I
0.04
0
25
34
0
1
VGS, GATE-T O-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID = 180 mA
TJ = 25°C
6
TJ = 25°C
5
4
3
TJ = -55°C
2
VGS = 2.5 V
VGS = 4.5 V
TJ = 25°C
3
TJ = 125°C
4
5
4
2
1
DRAIN-T O-SOURCE RESISTANCE (W)
0
035
DS(on),
R
1
V
, GATE-T O-SOURCE VOLTAGE (VOLTS)
GS
2
40.30.25
Figure 3. On-Resistance vs. Gate Voltage
1.75
ID = 180 mA
1.5
V
= 4.5 V
GS
1.25
DRAIN-T O-SOURCE RESISTANCE (W)
0
DS(on),
R
0.10.40.050.20.350.15
Figure 4. On-Resistance vs. Drain Current and
1000
VGS = 0 V
100
1.0
0.75
DRAIN-T O-SOURCE
0.5
DS(on),
0.25
R
RESISTANCE (NORMALIZED)
0
-500-2525
50150
75
TJ, JUNCTION TEMPERATURE (°C)
125100
, LEAKAGE (nA)
10
DSS
I
1
0
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Gate Voltage
TJ = 150°C
TJ = 125°C
12
1648
20
Figure 5. On-Resistance Variation with
Temperature
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Figure 6. Drain-to-Source Leakage Current
vs. Voltage
3
NTUD3129P
TYPICAL PERFORMANCE CURVES
16
C
iss
12
VGS = 0 V
T
= 25°C
1416
J
C
oss
C
rss
20
18
8
C, CAPACITANCE (pF)
4
0
0212
46810
GATE-T O-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance VariationFigure 8. Resistive Switching Time
0.18
VGS = 0 V
0.16
T
= 25°C
0.14
0.12
0.10
0.08
0.06
0.04
, SOURCE CURRENT (AMPS)
S
I
0.02
J
0
0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
1000
VDD = 10 V
I
= 180 mA
D
= 4.5 V
V
GS
100
t, TIME (ns)
10
1
110100
, GATE RESISTANCE (OHMS)
R
G
Variation vs. Gate Resistance
0.60.2
0.80.4
1.0
t
d(off)
t
f
t
r
t
d(on)
Figure 9. Diode Forward Voltage vs. Current
ORDERING INFORMATION
DevicePackageShipping
NTUD3129PT5GSOT-963
8000 / Tape & Reel
(Pb-Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
†
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SCALE 4:1
SOT−963
CASE 527AA−01
ISSUE D
DATE 30 JUL 2008
STYLE 1:
PIN 1. EMITTER 1
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
STYLE 4:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
STYLE 7:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. ANODE
6. CATHODE
STYLE 10:
PIN 1. CATHODE 1
2. N/C
3. CATHODE 2
4. ANODE 2
5. N/C
6. ANODE 1
D
456
12 3
e
−Y−
−X−
E
b
6X
STYLE 2:
PIN 1. EMITTER 1
2. EMITTER2
3. BASE 2
4. COLLECTOR 2
5. BASE 1
6. COLLECTOR 1
STYLE 5:
PIN 1. CATHODE
2. CATHODE
3. ANODE
4. ANODE
5. CATHODE
6. CATHODE
STYLE 8:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
A
L
H
E
C
X0.08
Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
MILLIMETERS
DIM MINNOM MAX
A0.400.450.50
b0.100.150.20
C0.050.100.15
D0.951.001.05
E0.750.800.85
e0.35 BSC
L0.050.100.15
H
E
0.951.001.05
INCHES
MINNOM MAX
0.016 0.018 0.020
0.004 0.006 0.008
0.002 0.004 0.006
0.037 0.039 0.041
0.03 0.032 0.034
0.014 BSC
0.002 0.004 0.006
0.037 0.039 0.041
GENERIC
STYLE 3:
PIN 1. CATHODE 1
2. CATHODE 1
3. ANODE/ANODE 2
4. CATHODE 2
5. CATHODE 2
6. ANODE/ANODE 1
STYLE 6:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
STYLE 9:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
0.90
0.0354
MARKING DIAGRAM*
XM
1
X= Specific Device Code
M= Month Code
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
SOLDERING FOOTPRINT*
0.35
0.35
0.014
0.014
0.20
0.008
0.20
0.008
SCALE 20:1
ǒ
inches
mm
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
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