ON Semiconductor NTUD3129P User Manual

NTUD3129P

Small Signal MOSFET

-20 V, -180 mA, Dual P-Channel,

1.0 x 1.0 mm SOT-963 Package

Features

•Dual P-Channel MOSFET

•Offers a Low R

Package

Solution in the Ultra Small 1.0 x 1.0 mm

DS(ON)

•1.5V Gate Voltage Rating

•Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely

Thin Environments such as Portable Electronics.

•These are Pb-Free Devices

Applications

•General Purpose Interfacing Switch

•Optimized for Power Management in Ultra Portable Equipment

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain-to-Source Voltage V

Gate-to-Source Voltage V

Continuous Drain
Current (Note 1)

Power Dissipation

(Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) (Note 2) I

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Surface-mounted on FR4 board using the minimum recommended pad size,
1 oz Cu.

2. Pulse Test: pulse width v300 ms, duty cycle v2%

= 25°C unless otherwise specified)

J

DSS

GS

Steady

State

t v 5 s

Steady

State

t v 5 s

TA = 25°C

TA = 85°C -100

TA = 25°C -180

TA = 25°C P

tp = 10 ms

T

I

I

DM

STG

T

D

D

S

L

-20 V

±8 V

-140

-125

mW

-200

-600 mA

-55 to
150

-200 mA

260 °C

mA

°C

V

(BR)DSS

-20 V

G1

S

G

D

SOT-963

CASE 527AA

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R

DS(ON)

5.0 W @ -4.5 V

7.0 W @ -2.5 V

10 W @ -1.8 V

14 W @ -1.5 V

D1

S1

PINOUT: SOT-963

1

1

2

1

3

2

MAX ID Max

G2

P-Channel

MOSFET

Top View

MARKING
DIAGRAM

1

-0.18 A

D2

S2

D

6

G

5

S

4

R MG

1

2

2

© Semiconductor Components Industries, LLC, 2007

June, 2007 - Rev. 0

R = Specific Device Code
M = Date Code
G = Pb-Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.

1 Publication Order Number:

NTUD3129P/D

NTUD3129P

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction-to-Ambient – Steady State (Note 3)

R

q

JA

Junction-to-Ambient – t = 5 s (Note 3) 600

3. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.

1000

°C/W

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

J

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

Zero Gate Voltage Drain Current I

V

(BR)DSS

DSS

VGS = 0 V, ID = -250 mA

VGS = 0 V, VDS = -5.0 V

VGS = 0 V, VDS = -16 V TJ = 25°C -100

Gate-to-Source Leakage Current I

GSS

VDS = 0 V, VGS = ±5.0 V ±100 nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Drain-to-Source On Resistance R

V

GS(TH)

DS(ON)

VGS = VDS, ID = -250 mA

VGS = -4.5 V, ID = -100 mA 4.0 5.0

VGS = -2.5 V, ID = -50 mA 5.0 7.0

VGS = -1.8 V, ID = -20 mA 6.5 10

VGS = -1.5 V, ID = -10 mA 7.5 14

VGS = -1.2 V, ID = -1.0 mA 11.5

Forward Transconductance g

Source-Drain Diode Voltage V

FS

SD

VDS = -5.0 V, ID = -125 mA 0.26 S

VGS = 0 V, ID = -10 mA -0.65 -1.0 V

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

C

ISS

OSS

RSS

f = 1 MHz, VGS = 0 V

V

DS

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)

Turn-On Delay Time

Rise Time t

Turn-Of f Delay Time t

Fall Time t

t

d(ON)

r

d(OFF)

f

VGS = -4.5 V, VDD = -15 V,

= -180 mA, RG = 2.0 W

I

D

4. Switching characteristics are independent of operating junction temperatures

= -15 V

-20 V

TJ = 25°C -50

TJ = 85°C -200

-0.4 -1.0 V

12

2.7

1.0

20

37

112

97

nA

W

pF

ns

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2