ON Semiconductor NTUD3129P User Manual

NTUD3129P

Small Signal MOSFET

-20 V, -180 mA, Dual P-Channel,

1.0 x 1.0 mm SOT-963 Package

Features

•Dual P-Channel MOSFET

•Offers a Low R

Package

Solution in the Ultra Small 1.0 x 1.0 mm

DS(ON)

•1.5V Gate Voltage Rating

•Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely

Thin Environments such as Portable Electronics.

•These are Pb-Free Devices

Applications

•General Purpose Interfacing Switch

•Optimized for Power Management in Ultra Portable Equipment

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain-to-Source Voltage V

Gate-to-Source Voltage V

Continuous Drain
Current (Note 1)

Power Dissipation

(Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) (Note 2) I

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Surface-mounted on FR4 board using the minimum recommended pad size,
1 oz Cu.

2. Pulse Test: pulse width v300 ms, duty cycle v2%

= 25°C unless otherwise specified)

J

DSS

GS

Steady

State

t v 5 s

Steady

State

t v 5 s

TA = 25°C

TA = 85°C -100

TA = 25°C -180

TA = 25°C P

tp = 10 ms

T

I

I

DM

STG

T

D

D

S

L

-20 V

±8 V

-140

-125

mW

-200

-600 mA

-55 to
150

-200 mA

260 °C

mA

°C

V

(BR)DSS

-20 V

G1

S

G

D

SOT-963

CASE 527AA

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R

DS(ON)

5.0 W @ -4.5 V

7.0 W @ -2.5 V

10 W @ -1.8 V

14 W @ -1.5 V

D1

S1

PINOUT: SOT-963

1

1

2

1

3

2

MAX ID Max

G2

P-Channel

MOSFET

Top View

MARKING
DIAGRAM

1

-0.18 A

D2

S2

D

6

G

5

S

4

R MG

1

2

2

© Semiconductor Components Industries, LLC, 2007

June, 2007 - Rev. 0

R = Specific Device Code
M = Date Code
G = Pb-Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.

1 Publication Order Number:

NTUD3129P/D

NTUD3129P

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction-to-Ambient – Steady State (Note 3)

R

q

JA

Junction-to-Ambient – t = 5 s (Note 3) 600

3. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.

1000

°C/W

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

J

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

Zero Gate Voltage Drain Current I

V

(BR)DSS

DSS

VGS = 0 V, ID = -250 mA

VGS = 0 V, VDS = -5.0 V

VGS = 0 V, VDS = -16 V TJ = 25°C -100

Gate-to-Source Leakage Current I

GSS

VDS = 0 V, VGS = ±5.0 V ±100 nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Drain-to-Source On Resistance R

V

GS(TH)

DS(ON)

VGS = VDS, ID = -250 mA

VGS = -4.5 V, ID = -100 mA 4.0 5.0

VGS = -2.5 V, ID = -50 mA 5.0 7.0

VGS = -1.8 V, ID = -20 mA 6.5 10

VGS = -1.5 V, ID = -10 mA 7.5 14

VGS = -1.2 V, ID = -1.0 mA 11.5

Forward Transconductance g

Source-Drain Diode Voltage V

FS

SD

VDS = -5.0 V, ID = -125 mA 0.26 S

VGS = 0 V, ID = -10 mA -0.65 -1.0 V

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

C

ISS

OSS

RSS

f = 1 MHz, VGS = 0 V

V

DS

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)

Turn-On Delay Time

Rise Time t

Turn-Of f Delay Time t

Fall Time t

t

d(ON)

r

d(OFF)

f

VGS = -4.5 V, VDD = -15 V,

= -180 mA, RG = 2.0 W

I

D

4. Switching characteristics are independent of operating junction temperatures

= -15 V

-20 V

TJ = 25°C -50

TJ = 85°C -200

-0.4 -1.0 V

12

2.7

1.0

20

37

112

97

nA

W

pF

ns

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2

NTUD3129P

TYPICAL PERFORMANCE CURVES

0.36

0.32

0.28

0.24

0.20

0.16

0.12

0.08

DRAIN CURRENT (AMPS)

D,

I

0.04

0

0

1

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

V

DS

Figure 1. On-Region Characteristics

12

8

VGS = 3.5 V to 5 V

3.0 V

TJ = 25°C

2.5 V

0.36

0.32

0.28

VDS ≥ 5 V

0.24

2.0 V

0.20

0.16

1.5 V

1.0 V

0.12

DRAIN CURRENT (AMPS)

0.08

D,

I

0.04

0

25

34

0

1

VGS, GATE-T O-SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

ID = 180 mA

TJ = 25°C

6

TJ = 25°C

5

4

3

TJ = -55°C

2

VGS = 2.5 V

VGS = 4.5 V

TJ = 25°C

3

TJ = 125°C

4

5

4

2

1

DRAIN-T O-SOURCE RESISTANCE (W)

0

035

DS(on),

R

1

V

, GATE-T O-SOURCE VOLTAGE (VOLTS)

GS

2

4 0.30.25

Figure 3. On-Resistance vs. Gate Voltage

1.75

ID = 180 mA

1.5
V

= 4.5 V

GS

1.25

DRAIN-T O-SOURCE RESISTANCE (W)

0

DS(on),

R

0.1 0.40.05 0.2 0.350.15

Figure 4. On-Resistance vs. Drain Current and

1000

VGS = 0 V

100

1.0

0.75

DRAIN-T O-SOURCE

0.5

DS(on),

0.25

R

RESISTANCE (NORMALIZED)

0

-50 0-25 25

50 150

75

TJ, JUNCTION TEMPERATURE (°C)

125100

, LEAKAGE (nA)

10

DSS

I

1

0

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

ID, DRAIN CURRENT (AMPS)

Gate Voltage

TJ = 150°C

TJ = 125°C

12

1648

20

Figure 5. On-Resistance Variation with

Temperature

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Figure 6. Drain-to-Source Leakage Current

vs. Voltage

3

NTUD3129P

TYPICAL PERFORMANCE CURVES

16

C

iss

12

VGS = 0 V
T

= 25°C

14 16

J

C

oss

C

rss

20

18

8

C, CAPACITANCE (pF)

4

0

02 12

46810

GATE-T O-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation Figure 8. Resistive Switching Time

0.18

VGS = 0 V

0.16
T

= 25°C

0.14

0.12

0.10

0.08

0.06

0.04

, SOURCE CURRENT (AMPS)

S

I

0.02

J

0

0

VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

1000

VDD = 10 V
I

= 180 mA

D

= 4.5 V

V

GS

100

t, TIME (ns)

10

1

1 10 100

, GATE RESISTANCE (OHMS)

R

G

Variation vs. Gate Resistance

0.60.2

0.80.4

1.0

t

d(off)

t

f

t

r

t

d(on)

Figure 9. Diode Forward Voltage vs. Current

ORDERING INFORMATION

Device Package Shipping

NTUD3129PT5G SOT-963

8000 / Tape & Reel

(Pb-Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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4

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SCALE 4:1

SOT−963

CASE 527AA−01

ISSUE D

DATE 30 JUL 2008

STYLE 1:

PIN 1. EMITTER 1

2. BASE 1

3. COLLECTOR 2

4. EMITTER 2

5. BASE 2

6. COLLECTOR 1

STYLE 4:

PIN 1. COLLECTOR

2. COLLECTOR

3. BASE

4. EMITTER

5. COLLECTOR

6. COLLECTOR

STYLE 7:

PIN 1. CATHODE

2. ANODE

3. CATHODE

4. CATHODE

5. ANODE

6. CATHODE

STYLE 10:

PIN 1. CATHODE 1

2. N/C

3. CATHODE 2

4. ANODE 2

5. N/C

6. ANODE 1

D

456

12 3

e

−Y−

−X−

E

b

6X

STYLE 2:

PIN 1. EMITTER 1

2. EMITTER2

3. BASE 2

4. COLLECTOR 2

5. BASE 1

6. COLLECTOR 1

STYLE 5:

PIN 1. CATHODE

2. CATHODE

3. ANODE

4. ANODE

5. CATHODE

6. CATHODE

STYLE 8:

PIN 1. DRAIN

2. DRAIN

3. GATE

4. SOURCE

5. DRAIN

6. DRAIN

A

L

H

E

C

X0.08

Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.

MILLIMETERS

DIM MIN NOM MAX

A 0.40 0.45 0.50

b 0.10 0.15 0.20
C 0.05 0.10 0.15
D 0.95 1.00 1.05

E 0.75 0.80 0.85
e 0.35 BSC
L 0.05 0.10 0.15

H

E

0.95 1.00 1.05

INCHES

MIN NOM MAX

0.016 0.018 0.020

0.004 0.006 0.008

0.002 0.004 0.006

0.037 0.039 0.041

0.03 0.032 0.034

0.014 BSC

0.002 0.004 0.006

0.037 0.039 0.041

GENERIC

STYLE 3:

PIN 1. CATHODE 1

2. CATHODE 1

3. ANODE/ANODE 2

4. CATHODE 2

5. CATHODE 2

6. ANODE/ANODE 1

STYLE 6:

PIN 1. CATHODE

2. ANODE

3. CATHODE

4. CATHODE

5. CATHODE

6. CATHODE

STYLE 9:

PIN 1. SOURCE 1

2. GATE 1

3. DRAIN 2

4. SOURCE 2

5. GATE 2

6. DRAIN 1

0.90

0.0354

MARKING DIAGRAM*

XM

1

X = Specific Device Code
M = Month Code

*This information is generic. Please refer

to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.

SOLDERING FOOTPRINT*

0.35

0.35

0.014

0.014

0.20

0.008

0.20

0.008

SCALE 20:1

ǒ

inches

mm

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

DOCUMENT NUMBER:

DESCRIPTION:

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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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© Semiconductor Components Industries, LLC, 2019

98AON18698D

SOT−963, 1X1, 0.35P

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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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