NTTFS5C460NL
MOSFET – Power, Single,
N-Channel
40 V, 4.8 mW, 74 A
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 2, 3, 4)
Power Dissipation
R
q
JC
Continuous Drain
Current R
(Notes 1, 3, 4)
Power Dissipation
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature
Range
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
q
JC
(Notes 1, 2, 3)
q
JA
(Notes 1, 3)
= 4.6 A)
L(pk)
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Junction−to−Case − Steady State (Note 3)
Junction−to−Ambient − Steady State (Note 3)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
= 25°C unless otherwise noted)
J
Symbol Value Unit
TC = 25°C
Steady
State
Steady
State
TA = 25°C, t
TC = 100°C 42
TC = 25°C
TC = 100°C 16
TA = 25°C
TA = 100°C 13
TA = 25°C
TA = 100°C 1.6
= 10 ms
p
P
P
I
TJ, T
E
Symbol Value Unit
R
q
R
q
2
, 2 oz. Cu pad.
DSS
GS
I
D
D
I
D
D
DM
S
AS
T
L
JC
JA
stg
40 V
±20 V
74
50
19
3.1
321 A
−55 to
+175
42 A
104 mJ
260 °C
3.0
47.7
A
W
A
W
°C
°C/W
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V
(BR)DSS
40 V
G (4)
R
MAX ID MAX
DS(on)
4.8 mW @ 10 V
7.6 mW @ 4.5 V
N−Channel
D (5 − 8)
S (1, 2, 3)
74 A
MARKING DIAGRAM
1
WDFN8
(m8FL)
CASE 511AB
60NL = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
1
S
60NL
S
AYWWG
S
G
G
D
D
D
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2019
June, 2019 − Rev. 0
1 Publication Order Number:
NTTFS5C460NL/D
NTTFS5C460NL
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise noted)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
DSS
GSS
VGS = 0 V, ID = 250 mA
VGS = 0 V,
V
= 40 V
DS
TJ = 25°C 10 mA
TJ = 125°C 250
VDS = 0 V, VGS = 20 V 100 nA
40 V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Drain−to−Source On Resistance R
V
GS(TH)
DS(on)
VGS = VDS, ID = 40 mA
VGS = 10 V, ID = 35 A 4 4.8 mW
1.2 2.0 V
VGS = 4.5 V, ID = 35 A 6.1 7.6
Forward Transconductance g
FS
VDS = 15 V, ID = 35 A 72 S
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Total Gate Charge Q
C
iss
oss
rss
G(TH)
GS
GD
G(TOT)
1300
VGS = 0 V, f = 1.0 MHz,
V
= 25 V
DS
530
22
2.5
VGS = 10 V, VDS = 20 V, ID = 35 A
4.7
3
VGS = 10 V, VDS = 20 V, ID = 35 A 11 nC
pF
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
Rise Time t
Turn−Off Delay Time t
Fall Time t
d(on)
r
d(off)
f
VGS = 10 V, VDS = 20 V,
I
= 35 A
D
9.2
97
17
4.4
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= 35 A
S
VGS = 0 V, dlS/dt = 100 A/ms,
I
= 35 A
S
TJ = 25°C 0.86 1.2
TJ = 125°C 0.75
29
14
14
12 nC
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS5C460NL
TYPICAL CHARACTERISTICS
100
90
80
70
60
50
40
30
, DRAIN CURRENT (A)
D
I
20
10
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
14
12
10
8
4.0 V
VGS = 4.5 V to 10 V
1.2
0.8 1.6 2.0 2.4
TJ = 25°C
= 35 A
I
D
3.6 V
3.2 V
2.8 V
100
90
80
70
60
50
40
30
, DRAIN CURRENT (A)
D
I
20
10
2.80.40
0
8
7
6
5
4
TJ = 25°C
TJ = 125°C
VGS = 4.5 V
VGS = 10 V
21
TJ = −55°C
3
40
TJ = 25°C
5
6
4
, DRAIN−TO−SOURCE RESISTANCE (mW)
DS(on)
R
2
476
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.0
VGS = 10 V
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
DS(on)
R
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
= 35 A
I
D
25 125
50 175
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
3
2
1
, DRAIN−TO−SOURCE RESISTANCE (mW)
DS(on)
R
0
1098532
10
15 40
25
205
30 35
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100K
10K
1K
100
, LEAKAGE (nA)
10
DSS
I
1
150100750−25−50
0.1
TJ = 175°C
TJ = 150°C
TJ = 125°C
TJ = 85°C
TJ = 25°C
10 20
40353025155
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTTFS5C460NL
TYPICAL CHARACTERISTICS
10K
1K
100
10
C, CAPACITANCE (pF)
VGS = 0 V
T
f = 1 MHz
1
1000
100
t
t, TIME (ns)
10
t
10
9
C
ISS
C
OSS
8
7
6
5
= 25°C
J
10
Q
4
C
RSS
3
2
, GATE−TO−SOURCE VOLTAGE (V)
1
GS
0
200
30 40 5 10 15 20
V
0
GS
Q
GD
VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge
VGS = 10 V
= 20 V
V
DS
I
= 35 A
D
d(off)
d(on)
100
t
r
t
f
, SOURCE CURRENT (A)
S
I
VGS = 0 V
10
1
TJ = 125°C
VDS = 20 V
= 25°C
T
J
I
= 35 A
D
25
1
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
1000
TC = 25°C
Single Pulse
VGS ≤ 10 V
100
10
1
, DRAIN CURRENT (A)
D
I
0.1
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
10
vs. Gate Resistance
R
Limit
DS(on)
Thermal Limit
Package Limit
Safe Operating Area
10 ms
0.5 ms
1 ms
10 ms
DC
100
1001
0.1
V
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
TJ = 25°C
0.60.40.3 1.1 1.2
TJ = −55°C
0.90.8 1.00.70.5
Figure 10. Diode Forward Voltage vs. Current
100
T
= 25°C
J(initial)
10
(A)
PEAK
I
T
1
J(initial)
= 100°C
0.1
10001010.1
0.00001
0.0001
0.001
0.01
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
100
(t) (°C/W)
JA
q
R
0.1
10
1
NTTFS5C460NL
50% Duty Cycle
20%
10%
5%
2%
1%
Single Pulse
0.01
0.010.001 10.0001 0.10.00001 100.000001
PULSE TIME (sec)
100 1000
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device Marking Package Shipping
NTTFS5C460NLTAG 60NL WDFN8
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
1500 / Tape & Reel
†
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
1
SCALE 2:1
0.05
E2
G
0.10 C
0.10 C
8X
C
A0.10 B
C
4X
E3
1234
TOP VIEW
SIDE VIEW
b
L
14
8
BOTTOM VIEW
D1
78
D2
2X
C
0.20
D
A
B
2X
56
E
E1
0.20 C
c
A
DETAIL A
e/2
K
M
5
L1
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
4X
q
A1
6X
e
DETAIL A
C
SEATING
PLANE
0.75
DATE 23 APR 2012
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
DIM MIN NOM
MILLIMETERS
A 0.70 0.75
A1 0.00 −−−
b 0.23 0.30
c 0.15 0.20
D
D1 2.95 3.05
D2 1.98 2.11
E
E1 2.95 3.05
E2 1.47 1.60
E3 0.23 0.30 0.40
e 0.65 BSC
G 0.30 0.41
K 0.65 0.80
L 0.30 0.43
L1 0.06 0.13
M 1.40 1.50
q 0 −−−
3.30 BSC
3.30 BSC
_
MAX
0.80
0.05
0.40
0.25
3.15
2.24
3.15
1.73
0.51
0.95
0.56
0.20
1.60
12
_
INCHES
MIN NOM
0.028 0.030
0.000 −−−
0.009 0.012
0.006 0.008
0.130 BSC
0.116 0.120
0.078 0.083
0.130 BSC
0.116 0.120
0.058 0.063
0.009 0.012 0.016
0.026 BSC
0.012 0.016
0.026 0.032
0.012 0.017
0.002 0.005
0.055 0.059
0 −−−
_
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.020
0.037
0.022
0.008
0.063
12
SOLDERING FOOTPRINT*
PACKAGE
OUTLINE
0.57
8X
0.650.42
PITCH
2.30
4X
0.66
3.60
_
GENERIC
MARKING DIAGRAM*
1
XXXXX
AYWWG
G
XXXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
DOCUMENT NUMBER:
DESCRIPTION:
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON30561E
WDFN8 3.3X3.3, 0.65P
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
0.47
2.37
3.46
DIMENSION: MILLIMETERS
PAGE 1 OF 1
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