ON Semiconductor NTTFS5811NL User Manual

NTTFS5811NL

MOSFET – Power, Single,

N-Channel

40 V, 6.7 mW, 40 A

Features

• Small Footprint (3.3 x 3.3 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Cur­rent R
2, 3, 4)

Power Dissipation
R

Y

J−mb

Continuous Drain Cur­rent R
3, 4)

Power Dissipation
R

q

JA

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche
Energy (T
I

L(pk)

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

(Notes 1,

Y

J−mb

(Notes 1, 2, 3)

(Notes 1 &

q

JA

(Notes 1, 3)

= 25°C, VDD = 50 V, VGS = 10 V,

J

= 36 A, L = 1.0 mH, RG = 25 W)

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Junction−to−Mounting Board (top) − Steady
State (Note 2 and 3)

Junction−to−Ambient − Steady State (Note 3)

1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm

4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.

= 25°C unless otherwise noted)

J

Symbol Value Unit

Tmb = 25°C

Steady

State

Steady

State

TA = 25°C, t

Tmb = 100°C 28

Tmb = 25°C

Tmb = 100°C 10

TA = 25°C

TA = 100°C 11

TA = 25°C

TA = 100°C 1.6

= 10 ms

p

P

P

I

E

Symbol Value Unit

R

Y

R

q

2

, 2 oz. Cu pad.

DSS

GS

I

D

D

I

D

D

DM

S

AS

T

L

J−mb

JA

stg

40 V

±20 V

40

21

16

3.2

354 A

−55 to
+175

17 A

65 mJ

260 °C

7.2

47

A

W

A

W

°C

°C/W

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V

(BR)DSS

40 V

R

DS(on)

6.7 mW @ 10 V

10 mW @ 4.5 V

N−Channel MOSFET

D (5−8)

G (4)

MAX ID MAX

40 A

S (1,2,3)

MARKING DIAGRAM

1

1

WDFN8

(m8FL)

CASE 511AB

5811 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

S

5811

S

AYWWG

S
G

G

D
D
D
D

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2011

June, 2019 − Rev. 4

1 Publication Order Number:

NTTFS5811NL/D

NTTFS5811NL

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise noted)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

DSS

GSS

VGS = 0 V, ID = 250 mA

VGS = 0 V,

V

= 40 V

DS

VDS = 0 V, VGS = "20 V "100 nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Drain−to−Source On Resistance R

V

GS(TH)

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V, ID = 20 A 5.8 6.7 mW

VGS = 4.5 V, ID = 20 A 8.8 10

Forward Transconductance g

FS

VDS = 5 V, ID = 10 A 24.6 S

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Total Gate Charge Q

C

iss

oss

rss

G(TOT)

G(TH)

GS

GD

G(TOT)

VGS = 0 V, f = 1.0 MHz,

V

= 25 V

DS

VGS = 4.5 V, VDS = 32 V, ID = 20 A,

= 2.5 W

R

G

VGS = 10 V, VDS = 32 V, ID = 20 A 30 nC

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(on)

d(off)

r

f

VGS = 4.5 V, VDS = 32 V,

= 20 A, RG = 2.5 W

I

D

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

V

SD

RR

a

b

RR

VGS = 0 V,

IS = 20 A

VGS = 0 V, dIS/dt = 100 A/ms,

I

= 20 A

S

5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

6. Switching characteristics are independent of operating junction temperatures.

40 V

TJ = 25°C 1.0 mA

TJ = 125°C 10

1.5 2.2 V

1570

215

157

17 nC

1

5

9

11

55

20

40

TJ = 25°C 0.83 1.2

TJ = 125°C 0.70

22

12

10

17 nC

pF

nC

ns

V

ns

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NTTFS5811NL

0

TYPICAL CHARACTERISTICS

100

10 V

90

80

70

60

50

40

30

, DRAIN CURRENT (A)

D

20

I

10

0

012345

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

0.016

0.014

0.012

0.010

0.008

4.6 V

VGS = 5 V

TJ = 25°C

4.2 V

4.0 V

3.8 V

3.6 V

3.4 V

3.2 V

3.0 V

ID = 20 A

= 25°C

T

J

80

VDS ≥ 10 V

70

60

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

12345

TJ = 25°C

TJ = 125°C

VGS, GATE−TO−SOURCE VOLTAGE (V)

TJ = −55°C

Figure 2. Transfer Characteristics

0.012
TJ = 25°C

0.010

0.008

0.006

VGS = 4.5 V

VGS = 10 V

0.006

, DRAIN−TO−SOURCE RESISTANCE (W)

0.004
2468

DS(on)

R

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

2.00
ID = 20 A

1.80

VGS = 10 V

1.60

1.40

1.20

, DRAIN−TO−SOURCE

1.00

DS(on)

0.80

R

RESISTANCE (NORMALIZED)

0.60

−50 −25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

0.004

, DRAIN−TO−SOURCE RESISTANCE (W)

0.002

10

DS(on)

R

100000

10000

, LEAKAGE (nA)

1000

DSS

I

100

5 10152025303540455055606570

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

VGS = 0 V

TJ = 150°C

TJ = 125°C

10 20 30 4

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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