ON Semiconductor NTTFS5811NL User Manual

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Page 1

NTTFS5811NL

MOSFET – Power, Single,

N-Channel

40 V, 6.7 mW, 40 A

Features

• Small Footprint (3.3 x 3.3 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current R 2, 3, 4)

Power Dissipation R

J−mb

Continuous Drain Current R 3, 4)

Power Dissipation R

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche Energy (T I

L(pk)

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

(Notes 1,

J−mb

(Notes 1, 2, 3)

(Notes 1 &

(Notes 1, 3)

= 25°C, VDD = 50 V, VGS = 10 V,

= 36 A, L = 1.0 mH, RG = 25 W)

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Junction−to−Mounting Board (top) − Steady State (Note 2 and 3)

Junction−to−Ambient − Steady State (Note 3)

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm

4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.

= 25°C unless otherwise noted)

Symbol Value Unit

Tmb = 25°C

Steady

State

Steady

State

TA = 25°C, t

Tmb = 100°C 28

Tmb = 25°C

Tmb = 100°C 10

TA = 25°C

TA = 100°C 11

TA = 25°C

TA = 100°C 1.6

= 10 ms

Symbol Value Unit

, 2 oz. Cu pad.

DSS

J−mb

stg

40 V

±20 V

3.2

354 A

−55 to +175

17 A

65 mJ

260 °C

7.2

°C

°C/W

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(BR)DSS

40 V

DS(on)

6.7 mW @ 10 V

10 mW @ 4.5 V

N−Channel MOSFET

D (5−8)

G (4)

MAX ID MAX

40 A

S (1,2,3)

MARKING DIAGRAM

WDFN8

(m8FL)

CASE 511AB

5811 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package

(Note: Microdot may be in either location)

5811

AYWWG

S G

D D D D

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet.

June, 2019 − Rev. 4

1 Publication Order Number:

NTTFS5811NL/D

Page 2

NTTFS5811NL

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise noted)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V, ID = 250 mA

VGS = 0 V,

= 40 V

VDS = 0 V, VGS = "20 V "100 nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Drain−to−Source On Resistance R

GS(TH)

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V, ID = 20 A 5.8 6.7 mW

VGS = 4.5 V, ID = 20 A 8.8 10

Forward Transconductance g

VDS = 5 V, ID = 10 A 24.6 S

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Total Gate Charge Q

iss

oss

rss

G(TOT)

G(TH)

G(TOT)

VGS = 0 V, f = 1.0 MHz,

= 25 V

VGS = 4.5 V, VDS = 32 V, ID = 20 A,

= 2.5 W

VGS = 10 V, VDS = 32 V, ID = 20 A 30 nC

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(on)

d(off)

VGS = 4.5 V, VDS = 32 V,

= 20 A, RG = 2.5 W

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

VGS = 0 V,

IS = 20 A

VGS = 0 V, dIS/dt = 100 A/ms,

= 20 A

5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

6. Switching characteristics are independent of operating junction temperatures.

40 V

TJ = 25°C 1.0 mA

TJ = 125°C 10

1.5 2.2 V

1570

215

157

17 nC

TJ = 25°C 0.83 1.2

TJ = 125°C 0.70

17 nC

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NTTFS5811NL

TYPICAL CHARACTERISTICS

100

10 V

, DRAIN CURRENT (A)

012345

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

0.016

0.014

0.012

0.010

0.008

4.6 V

VGS = 5 V

TJ = 25°C

4.2 V

4.0 V

3.8 V

3.6 V

3.4 V

3.2 V

3.0 V

ID = 20 A

= 25°C

VDS ≥ 10 V

, DRAIN CURRENT (A)

12345

TJ = 25°C

TJ = 125°C

VGS, GATE−TO−SOURCE VOLTAGE (V)

TJ = −55°C

Figure 2. Transfer Characteristics

0.012 TJ = 25°C

0.010

0.008

0.006

VGS = 4.5 V

VGS = 10 V

0.006

, DRAIN−TO−SOURCE RESISTANCE (W)

0.004 2468

DS(on)

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

2.00 ID = 20 A

1.80

VGS = 10 V

1.60

1.40

1.20

, DRAIN−TO−SOURCE

1.00

DS(on)

0.80

RESISTANCE (NORMALIZED)

0.60

−50 −25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

0.004

, DRAIN−TO−SOURCE RESISTANCE (W)

0.002

DS(on)

100000

10000

, LEAKAGE (nA)

1000

DSS

100

5 10152025303540455055606570

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

VGS = 0 V

TJ = 150°C

TJ = 125°C

10 20 30 4

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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Page 4

NTTFS5811NL

TYPICAL CHARACTERISTICS

2200

2000

1800

1600

iss

VGS = 0 V

TJ = 25°C

1400

1200

1000

800

600

C, CAPACITANCE (pF)

400

200

rss

0 10203040

oss

DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

1000

VDD = 32 V

= 20 A

= 4.5 V

100

t, TIME (ns)

d(off)

d(on)

(V)

, GATE−TO−SOURCE VOLTAGE

0 5 10 15 20 25 30

VDS = 32 V

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source Voltage vs. Total

Charge

VGS = 0 V TJ = 25°C

, SOURCE CURRENT (A)

= 20 A = 25°C

1.0 1 10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

1000

, DRAIN CURRENT (A)

VGS = 10 V Single Pulse TC = 25°C

100

Limit

DS(on)

Thermal Limit Package Limit

0.1

0.1 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

10 ms

100 ms

1 ms

10 ms

0.5 0.6 0.7 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage vs. Current

, SINGLE PULSE DRAIN−TO−

SOURCE AVALANCHE ENERGY (mJ)

25 50 75 100 125 150 17

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

1.0

ID = 36 A

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Page 5

NTTFS5811NL

TYPICAL CHARACTERISTICS

100

Duty Cycle = 0.5

0.1

THERMAL RESISTANCE

(°C/W) EFFECTIVE TRANSIENT

JA(t)

0.01

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 100

DEVICE ORDERING INFORMATION

NTTFS5811NLTAG 5811 WDFN8

NTTFS5811NLTWG 5811 WDFN8

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

0.2

0.1

0.05

0.02

0.01

Single Pulse

PULSE TIME (sec)

Figure 13. Thermal Response

Device Marking Package Shipping

(Pb−Free)

†

1500 / Tape & Reel

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Page 6

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SCALE 2:1

0.05

0.10 C

A0.10 B

1234

TOP VIEW

SIDE VIEW

BOTTOM VIEW

e/2

0.20

DETAIL A

0.20 C

WDFN8 3.3x3.3, 0.65P

CASE 511AB

ISSUE D

DETAIL A

SEATING

PLANE

0.75

DATE 23 APR 2012

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.

DIM MIN NOM

MILLIMETERS

A 0.70 0.75

A1 0.00 −−−

b 0.23 0.30 c 0.15 0.20

D D1 2.95 3.05 D2 1.98 2.11

E E1 2.95 3.05 E2 1.47 1.60 E3 0.23 0.30 0.40

e 0.65 BSC G 0.30 0.41 K 0.65 0.80

L 0.30 0.43

L1 0.06 0.13

M 1.40 1.50

q 0 −−−

3.30 BSC

MAX

0.80

0.05

0.40

0.25

3.15

2.24

3.15

1.73

0.51

0.95

0.56

0.20

1.60 12

INCHES

MIN NOM

0.028 0.030

0.000 −−−

0.009 0.012

0.006 0.008

0.130 BSC

0.116 0.120

0.078 0.083

0.130 BSC

0.116 0.120

0.058 0.063

0.009 0.012 0.016

0.026 BSC

0.012 0.016

0.026 0.032

0.012 0.017

0.002 0.005

0.055 0.059 0 −−−

MAX

0.031

0.002

0.016

0.010

0.124

0.088

0.124

0.068

0.020

0.037

0.022

0.008

0.063 12

SOLDERING FOOTPRINT*

PACKAGE OUTLINE

0.57

0.650.42 PITCH

2.30

0.66

3.60

GENERIC

MARKING DIAGRAM*

XXXXX

AYWWG

XXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package

*This information is generic. Please refer

to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present.

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98AON30561E

WDFN8 3.3X3.3, 0.65P

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

0.47

2.37

3.46

DIMENSION: MILLIMETERS

PAGE 1 OF 1

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ON Semiconductor NTTFS5811NL User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual