ON Semiconductor NTTFS5116PL User Manual

NTTFS5116PL

MOSFET – Power

-60 V, -20 A, 52 mW

Features

• Low R

• Fast Switching

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Load Switches

• DC Motor Control

• DC−DC Conversion

DS(on)

V

(BR)DSS

−60 V

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R

MAX ID MAX

DS(on)

52 mW @ −10 V

72 mW @ −4.5 V

−20 A

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain
Current R

Power Dissipation R
(Note 1)

Continuous Drain
Current R

Power Dissipation
R

q

JC

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I

Single Pulse Drain−to−Source Ava­lanche Energy

Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

q

JA

q

JC

(Note 1)

(Note 1)

(Note 1)

= 25°C unless otherwise stated)

J

TA = 25°C

TA = 100°C −4.0

q

JA

Steady

State

tp = 10 ms

TA = 25°C

TA = 100°C 1.6

TC = 25°C

TC = 100°C −14

TC = 25°C

TC = 100°C 20

L = 0.1 mH

Symbol Value Unit

D

D

D

D

S

L

−60 V

±20 V

−5.7

3.2

−20

40

−76 A

−55 to

+175

−20 A

45 mJ

30 A

260 °C

A

W

A

W

°C

P

P

I

T

E

I

DSS

GS

I

I

DM

stg

AS

AS

T

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case – Steady
State (Note 1)

Junction−to−Ambient – Steady
State (Note 1)

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces.

R

q

JC

R

q

JA

3.8

47

°C/W

P−Channel MOSFET

D (5−8)

G (4)

S (1,2,3)

MARKING DIAGRAM

1

WDFN8

(m8FL)

CASE 511AB

5116 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

1

S

5116

S

AYWWG

S
G

G

D
D
D
D

ORDERING INFORMATION

Device Package Shipping

NTTFS5116PLTAG WDFN8

(Pb−Free)

NTTFS5116PLTWG WDFN8

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

1500/Tape & Reel

5000/Tape & Reel

†

© Semiconductor Components Industries, LLC, 2011

June, 2019 − Rev. 2

1 Publication Order Number:

NTTFS5116PL/D

NTTFS5116PL

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage
Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

VGS = 0 V, ID = −250 mA

VGS = 0 V,

V

= −60 V

DS

VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Negative Threshold Temperature
Coefficient

Drain−to−Source On Resistance R

V

GS(TH)

V

GS(TH)/TJ

DS(on)

VGS = VDS, ID = −250 mA

VGS = −10 V ID = −6 A 37 52 mW

VGS = −4.5 V ID = −4.4 A 51 72

Forward Transconductance g

FS

VDS = −15 V, ID = −6 A 11 S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

C

iss

oss

rss

G(TOT)

VGS = 0 V, f = 1.0 MHz, VDS = −30 V

VGS = −10 V, VDS = −48 V, ID = −5 A 25 nC

VGS = −4.5 V, VDS = −48 V, ID = −5 A 14

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Plateau Voltage V

Gate Resistance R

G(TH)

GS

GD

GP

G

VGS = −4.5 V, VDS = −48 V, ID = −5 A

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(on)

d(off)

r

f

VGS = −4.5 V, VDS = −48 V,

= −5 A, RG = 6 W

I

D

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

V

SD

RR

a

b

RR

VGS = 0 V,

I

= −5 A

S

VGS = 0 V, dIS/dt = −100 A/ms,

I

= −5 A

S

2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

−60 V

69.7 mV/°C

TJ = 25°C −1.0 mA

TJ = 125°C −100

−1 −3 V

−6.2 mV/°C

1258

127

84

1

4

7

3.1 V

5.3

15

58

30

37

TJ = 25°C −0.79 −1.2

TJ = 125°C −0.64

20

15

5

19 nC

pF

nC

W

ns

V

ns

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2

NTTFS5116PL

TYPICAL CHARACTERISTICS

40

VGS = 10 V

30

20

10

, DRAIN CURRENT (A)

D

I

0

012345

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS = 4.5 V

VGS = 4 V

VGS = 3.5 V

VGS = 3 V

Figure 1. On−Region Characteristics

0.075

ID = −6 A

= 25°C

T

J

0.065

0.055

40

VDS ≥ 10 V

30

20

10

, DRAIN CURRENT (A)

D

I

0

TJ = 25°C

TJ = 125°C

TJ = −55°C

23456

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

0.080

TJ = 25°C

0.070

0.060

0.050

VGS = 4.5 V

0.045

, DRAIN−TO−SOURCE RESISTANCE (W)

0.035

DS(on)

246810

R

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

2.0
ID = −4.4 A

1.8

1.6

1.4

1.2

1.0

, DRAIN−TO−SOURCE RES-

ISTANCE (NORMALIZED)

0.8

DS(on)

R

0.6

= 4.5 V

V

GS

−50 −25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

0.040

, DRAIN−TO−SOURCE RESISTANCE (W)

0.030

DS(on)

5 10152025303540

R

VGS = 10 V

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

10,000

VGS = 0 V

TJ = 150°C

1,000

, LEAKAGE (nA)

DSS

I

100

10 20 30 40 50 60

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 125°C

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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