ON Semiconductor NTTFS5116PL User Manual

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Page 1

NTTFS5116PL

MOSFET – Power

-60 V, -20 A, 52 mW

Features

• Low R

• Fast Switching

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Load Switches

• DC Motor Control

• DC−DC Conversion

DS(on)

(BR)DSS

−60 V

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MAX ID MAX

DS(on)

52 mW @ −10 V

72 mW @ −4.5 V

−20 A

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current R

Power Dissipation R (Note 1)

Continuous Drain Current R

Power Dissipation R

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche Energy

Lead Temperature for Soldering Purposes (1/8” from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

(Note 1)

= 25°C unless otherwise stated)

TA = 25°C

TA = 100°C −4.0

Steady

State

tp = 10 ms

TA = 25°C

TA = 100°C 1.6

TC = 25°C

TC = 100°C −14

TC = 25°C

TC = 100°C 20

L = 0.1 mH

Symbol Value Unit

−60 V

±20 V

−5.7

3.2

−20

−76 A

−55 to

+175

−20 A

45 mJ

30 A

260 °C

°C

DSS

stg

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case – Steady State (Note 1)

Junction−to−Ambient – Steady State (Note 1)

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces.

3.8

°C/W

P−Channel MOSFET

D (5−8)

G (4)

S (1,2,3)

MARKING DIAGRAM

WDFN8

(m8FL)

CASE 511AB

5116 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package

(Note: Microdot may be in either location)

5116

AYWWG

S G

D D D D

ORDERING INFORMATION

Device Package Shipping

NTTFS5116PLTAG WDFN8

(Pb−Free)

NTTFS5116PLTWG WDFN8

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

1500/Tape & Reel

5000/Tape & Reel

†

June, 2019 − Rev. 2

1 Publication Order Number:

NTTFS5116PL/D

Page 2

NTTFS5116PL

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS/TJ

DSS

GSS

VGS = 0 V, ID = −250 mA

VGS = 0 V,

= −60 V

VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Negative Threshold Temperature Coefficient

Drain−to−Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = −250 mA

VGS = −10 V ID = −6 A 37 52 mW

VGS = −4.5 V ID = −4.4 A 51 72

Forward Transconductance g

VDS = −15 V, ID = −6 A 11 S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

iss

oss

rss

G(TOT)

VGS = 0 V, f = 1.0 MHz, VDS = −30 V

VGS = −10 V, VDS = −48 V, ID = −5 A 25 nC

VGS = −4.5 V, VDS = −48 V, ID = −5 A 14

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Plateau Voltage V

Gate Resistance R

G(TH)

VGS = −4.5 V, VDS = −48 V, ID = −5 A

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(on)

d(off)

VGS = −4.5 V, VDS = −48 V,

= −5 A, RG = 6 W

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

VGS = 0 V,

= −5 A

VGS = 0 V, dIS/dt = −100 A/ms,

= −5 A

2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

−60 V

69.7 mV/°C

TJ = 25°C −1.0 mA

TJ = 125°C −100

−1 −3 V

−6.2 mV/°C

1258

127

3.1 V

5.3

TJ = 25°C −0.79 −1.2

TJ = 125°C −0.64

19 nC

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NTTFS5116PL

TYPICAL CHARACTERISTICS

VGS = 10 V

, DRAIN CURRENT (A)

012345

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS = 4.5 V

VGS = 4 V

VGS = 3.5 V

VGS = 3 V

Figure 1. On−Region Characteristics

0.075

ID = −6 A

= 25°C

0.065

0.055

VDS ≥ 10 V

, DRAIN CURRENT (A)

TJ = 25°C

TJ = 125°C

TJ = −55°C

23456

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

0.080

TJ = 25°C

0.070

0.060

0.050

VGS = 4.5 V

0.045

, DRAIN−TO−SOURCE RESISTANCE (W)

0.035

DS(on)

246810

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

2.0 ID = −4.4 A

1.8

1.6

1.4

1.2

1.0

, DRAIN−TO−SOURCE RES-

ISTANCE (NORMALIZED)

0.8

DS(on)

0.6

= 4.5 V

−50 −25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

0.040

, DRAIN−TO−SOURCE RESISTANCE (W)

0.030

DS(on)

5 10152025303540

VGS = 10 V

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

10,000

VGS = 0 V

TJ = 150°C

1,000

, LEAKAGE (nA)

DSS

100

10 20 30 40 50 60

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 125°C

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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Page 4

NTTFS5116PL

TYPICAL CHARACTERISTICS

1800

1600

1400

1200

iss

VGS = 0 V

= 25°C

1000

800

600

400

C, CAPACITANCE (pF)

200

rss

oss

0 102030405060

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

1000

VDD = −48 V

= −5 A

= −4.5 V

100

t, TIME (ns)

d(on)

d(off)

(V)

, GATE−TO−SOURCE VOLTAGE

VDS = −48 V I T

0 5 10 15 20 25

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

VGS = 0 V

TJ = 25°C

, SOURCE CURRENT (A)

−I

= −5 A

= 25°C

1 10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

100

VGS = −10 V Single Pulse TC = 25°C

1 ms

10 ms

100 ms

10 ms

, DRAIN CURRENT (A)

−I

Limit

DS(on)

Thermal Limit Package Limit

0.1

0.1 1 10 100

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

0.5 0.6 0.7 0.8 0.9 1.0 1.1

−VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage vs. Current

, SINGLE PULSE DRAIN−TO−

SOURCE AVALANCHE ENERGY (mJ)

25 50 75 100 125 150 175

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

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Page 5

NTTFS5116PL

TYPICAL CHARACTERISTICS

100

D = 0.5

(t)

0.1

0.01

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 100

D = 0.2 D = 0.1

D = 0.05

D = 0.02

D = 0.01

Single Pulse

PULSE TIME (sec)

Figure 13. Thermal Response

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Page 6

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SCALE 2:1

0.05

0.10 C

A0.10 B

1234

TOP VIEW

SIDE VIEW

BOTTOM VIEW

e/2

0.20

DETAIL A

0.20 C

WDFN8 3.3x3.3, 0.65P

CASE 511AB

ISSUE D

DETAIL A

SEATING

PLANE

0.75

DATE 23 APR 2012

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.

DIM MIN NOM

MILLIMETERS

A 0.70 0.75

A1 0.00 −−−

b 0.23 0.30 c 0.15 0.20

D D1 2.95 3.05 D2 1.98 2.11

E E1 2.95 3.05 E2 1.47 1.60 E3 0.23 0.30 0.40

e 0.65 BSC G 0.30 0.41 K 0.65 0.80

L 0.30 0.43

L1 0.06 0.13

M 1.40 1.50

q 0 −−−

3.30 BSC

MAX

0.80

0.05

0.40

0.25

3.15

2.24

3.15

1.73

0.51

0.95

0.56

0.20

1.60 12

INCHES

MIN NOM

0.028 0.030

0.000 −−−

0.009 0.012

0.006 0.008

0.130 BSC

0.116 0.120

0.078 0.083

0.130 BSC

0.116 0.120

0.058 0.063

0.009 0.012 0.016

0.026 BSC

0.012 0.016

0.026 0.032

0.012 0.017

0.002 0.005

0.055 0.059 0 −−−

MAX

0.031

0.002

0.016

0.010

0.124

0.088

0.124

0.068

0.020

0.037

0.022

0.008

0.063 12

SOLDERING FOOTPRINT*

PACKAGE OUTLINE

0.57

0.650.42 PITCH

2.30

0.66

3.60

GENERIC

MARKING DIAGRAM*

XXXXX

AYWWG

XXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package

*This information is generic. Please refer

to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present.

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98AON30561E

WDFN8 3.3X3.3, 0.65P

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

0.47

2.37

3.46

DIMENSION: MILLIMETERS

PAGE 1 OF 1

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Page 7

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ON Semiconductor NTTFS5116PL User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual