NTTFS4H05N
MOSFET – Power, Single,
N-Channel, m8-FL
25 V, 94 A
Features
•Optimized Design to Minimize Conduction and Switching Losses
•Optimized Package to Minimize Parasitic Inductances
•Optimized material for improved thermal performance
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Applications
•High Performance DC-DC Converters
•System Voltage Rails
•Netcom, Telecom
•Servers & Point of Load
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter |
Symbol |
Value |
Units |
|
|
|
|
Drain-to-Source Voltage |
VDSS |
25 |
V |
Gate-to-Source Voltage |
VGS |
±20 |
V |
Continuous Drain Current RqJA |
ID |
22.4 |
A |
(TA = 25°C, Note 1) |
|
|
|
Power Dissipation RqJA |
PD |
2.66 |
W |
(TA = 25°C, Note 1) |
|
|
|
Continuous Drain Current RqJC |
ID |
94 |
A |
(TC = 25°C, Note 1) |
|
|
|
Power Dissipation RqJC |
PD |
46.3 |
W |
(TC = 25°C, Note 1) |
|
|
|
Pulsed Drain Current (tp = 10 ms) |
IDM |
304 |
A |
Single Pulse Drain-to-Source Avalanche |
EAS |
84 |
mJ |
Energy (Note 1) |
|
|
|
(IL = 41 Apk, L = 0.1 mH) (Note 3) |
|
|
|
Drain to Source dV/dt |
dV/dt |
7 |
V/ns |
|
|
|
|
Maximum Junction Temperature |
TJ(max) |
150 |
°C |
Storage Temperature Range |
TSTG |
−55 to |
°C |
|
|
150 |
|
|
|
|
|
Lead Temperature Soldering Reflow (SMD |
TSLD |
260 |
°C |
Styles Only), Pb-Free Versions (Note 2) |
|
|
|
|
|
|
|
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness and FR4 PCB substrate.
2.For more information, please refer to our Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3.This is the absolute maximum rating. Parts are 100% UIS tested at TJ = 25°C,
VGS = 10 V, IL = 27 A, EAS = 36 mJ.
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VGS |
MAX RDS(on) |
TYP QGTOT |
4.5 V |
4.8 mW |
8.7 nC |
|
|
|
10 V |
3.3 mW |
18.9 nC |
|
|
|
|
|
|
MARKING DIAGRAM
|
|
1 |
|
|
1 |
|
S |
H05N |
D |
WDFN8 |
|
S |
D |
|
(m8FL) |
|
S |
AYWWG |
D |
CASE 511AB |
G |
G |
D |
|
H05N |
= Specific Device Code |
|
||
A |
= Assembly Location |
|
||
Y |
= Year |
|
|
|
WW |
= Work Week |
|
||
G |
= Pb−Free Package |
|
(Note: Microdot may be in either location)
PIN CONNECTIONS m8−FL (3.3 x 3.3 mm)
(Top View) |
(Bottom View) |
N−CHANNEL MOSFET
D (5−8)
G (4)
S (1,2,3)
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of this data sheet.
♥ Semiconductor Components Industries, LLC, 2016 |
1 |
Publication Order Number: |
June, 2019 − Rev. 4 |
|
NTTFS4H05N/D |
NTTFS4H05N
THERMALCHARACTERISTICS
Parameter |
Symbol |
Max |
Units |
|
|
|
|
Thermal Resistance, |
|
|
°C/W |
Junction-to-Ambient (Note 1 and 4) |
RqJA |
47 |
|
Junction-to-Case (Note 1 and 4) |
RqJC |
2.7 |
|
|
|
|
|
4. Thermal Resistance RqJA and RqJC as defined in JESD51−3.
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2
NTTFS4H05N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter |
Symbol |
|
Test Condition |
Min |
Typ |
Max |
Unit |
|
|
|
|
|
|
|
|
|
|
OFF CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Drain−to−Source Breakdown Voltage |
V(BR)DSS |
VGS = 0 V, ID = 250 mA |
25 |
|
|
V |
||
Drain−to−Source Breakdown Voltage |
V(BR)DSS/ |
|
|
|
|
15 |
|
mV/°C |
Temperature Coefficient |
TJ |
|
|
|
|
|
|
|
Zero Gate Voltage Drain Current |
IDSS |
VGS |
= 0 V, |
TJ = 25°C |
|
|
1.0 |
mA |
|
|
VDS = 20 V |
|
|
|
|
||
|
|
TJ = 125°C |
|
|
20 |
|||
|
|
|
|
|
|
|
||
Gate−to−Source Leakage Current |
IGSS |
VDS = 0 V, VGS = 20 V |
|
|
100 |
nA |
||
ON CHARACTERISTICS (Note 5) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Gate Threshold Voltage |
VGS(TH) |
VGS = VDS, ID = 250 mA |
1.2 |
|
2.1 |
V |
||
Negative Threshold Temperature Coefficient |
VGS(TH)/TJ |
|
|
|
|
3.8 |
|
mV/°C |
Drain−to−Source On Resistance |
RDS(on) |
VGS = 10 V |
ID = 30 A |
|
2.5 |
3.3 |
mW |
|
|
|
VGS = 4.5 V |
ID = 30 A |
|
3.8 |
4.8 |
||
|
|
|
|
|||||
Forward Transconductance |
gFS |
VDS = 12 V, ID = 15 A |
|
69 |
|
S |
||
CHARGES AND CAPACITANCES |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Input Capacitance |
CISS |
|
|
|
|
1205 |
1812 |
|
Output Capacitance |
COSS |
VGS = 0 V, f = 1 MHz, VDS = 12 V |
|
835 |
1293 |
pF |
||
Reverse Transfer Capacitance |
CRSS |
|
|
|
|
45 |
81 |
|
Total Gate Charge |
QG(TOT) |
|
|
|
|
8.7 |
18.6 |
|
Threshold Gate Charge |
QG(TH) |
VGS = 4.5 V, VDS = 12 V; ID = 30 A |
|
2.7 |
6.0 |
nC |
||
Gate−to−Source Charge |
QGS |
|
3.6 |
6.2 |
||||
|
|
|
|
|
||||
Gate−to−Drain Charge |
QGD |
|
|
|
|
1.88 |
5.6 |
|
Total Gate Charge |
QG(TOT) |
VGS = 10 V, VDS = 12 V; ID = 30 A |
|
18.9 |
40 |
nC |
||
Gate Resistance |
RG |
|
TA = 25°C |
|
|
1.0 |
2.0 |
W |
SWITCHING CHARACTERISTICS (Note 6) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Turn−On Delay Time |
td(ON) |
|
|
|
|
8.9 |
|
|
Rise Time |
tr |
VGS = 4.5 V, VDS = 12 V, ID = 15 A, |
|
32 |
|
ns |
||
|
|
|
|
|
||||
Turn−Off Delay Time |
td(OFF) |
|
RG = 3.0 W |
|
14.6 |
|
|
|
Fall Time |
tf |
|
|
|
|
3 |
|
|
SWITCHING CHARACTERISTICS (Note 6) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Turn−On Delay Time |
td(ON) |
|
|
|
|
6.0 |
|
|
Rise Time |
tr |
VGS = 10 V, VDS |
= 12 V, |
|
27 |
|
ns |
|
|
|
|
|
|
|
|||
Turn−Off Delay Time |
td(OFF) |
ID |
= 15 A, RG = 3.0 W |
|
18.6 |
|
|
|
Fall Time |
tf |
|
|
|
|
2.3 |
|
|
DRAIN−SOURCE DIODE CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Forward Diode Voltage |
VSD |
VGS |
= 0 V, |
TJ = 25°C |
|
0.78 |
1.1 |
V |
|
|
IS = 10 A |
° |
|
0.6 |
|
||
|
|
|
|
TJ = 125 C |
|
|
|
|
Reverse Recovery Time |
tRR |
|
|
|
|
30.8 |
66 |
|
Charge Time |
ta |
VGS = 0 V, dIS/dt = 100 A/ms, |
|
15 |
|
ns |
||
Discharge Time |
tb |
|
IS = 10 A |
|
|
15.8 |
|
|
Reverse Recovery Charge |
QRR |
|
|
|
|
20 |
|
nC |
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5.Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6.Switching characteristics are independent of operating junction temperatures.
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3