NTTFS4H05N
MOSFET – Power, Single,
N-Channel, m8-FL
25 V, 94 A
Features
• Optimized Design to Minimize Conduction and Switching Losses
• Optimized Package to Minimize Parasitic Inductances
• Optimized material for improved thermal performance
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• High Performance DC-DC Converters
• System Voltage Rails
• Netcom, Telecom
• Servers & Point of Load
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Continuous Drain Current R
(T
= 25°C, Note 1)
A
Power Dissipation R
(T
= 25°C, Note 1)
A
Continuous Drain Current R
(T
= 25°C, Note 1)
C
Power Dissipation R
(T
= 25°C, Note 1)
C
Pulsed Drain Current (tp = 10 ms)
Single Pulse Drain-to-Source Avalanche
Energy (Note 1)
(IL = 41 Apk, L = 0.1 mH) (Note 3)
Drain to Source dV/dt dV/dt 7 V/ns
Maximum Junction Temperature T
Storage Temperature Range T
Lead Temperature Soldering Reflow (SMD
Styles Only), Pb-Free Versions (Note 2)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Values based on copper area of 645 mm
and FR4 PCB substrate.
2. For more information, please refer to our Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3. This is the absolute maximum rating. Parts are 100% UIS tested at T
= 10 V, IL = 27 A, EAS = 36 mJ.
V
GS
q
JA
q
JC
q
JA
q
JC
Symbol Value Units
DSS
GS
I
D
P
D
I
D
P
D
I
DM
E
AS
J(max)
STG
T
SLD
2
(or 1 in2) of 2 oz copper thickness
25 V
±20 V
22.4 A
2.66 W
94 A
46.3 W
304 A
84 mJ
150 °C
−55 to
150
260 °C
= 25°C,
J
°C
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V
GS
4.5 V
10 V
MAX R
4.8 mW
3.3 mW
DS(on)
TYP Q
MARKING DIAGRAM
1
WDFN8
(m8FL)
CASE 511AB
H05N = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
m8−FL (3.3 x 3.3 mm)
(Top View) (Bottom View)
N−CHANNEL MOSFET
G (4)
S
S
S
G
D (5−8)
1
H05N
AYWWG
G
S (1,2,3)
GTOT
8.7 nC
18.9 nC
D
D
D
D
© Semiconductor Components Industries, LLC, 2016
June, 2019 − Rev. 4
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
1 Publication Order Number:
NTTFS4H05N/D
THERMALCHARACTERISTICS
Parameter Symbol Max Units
Thermal Resistance,
Junction-to-Ambient (Note 1 and 4)
Junction-to-Case (Note 1 and 4)
4. Thermal Resistance R
q
and R
JA
R
q
JA
R
q
JC
as defined in JESD51−3.
q
JC
NTTFS4H05N
°C/W
47
2.7
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2
NTTFS4H05N
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
VGS = 0 V,
V
= 20 V
DS
TJ = 25°C 1.0
TJ = 125°C 20
VDS = 0 V, VGS = 20 V 100 nA
25 V
15
mV/°C
mA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient V
V
GS(TH)/TJ
Drain−to−Source On Resistance R
Forward Transconductance g
GS(TH)
DS(on)
FS
VGS = VDS, ID = 250 mA
VGS = 10 V ID = 30 A 2.5 3.3
VGS = 4.5 V ID = 30 A 3.8 4.8
VDS = 12 V, ID = 15 A 69 S
1.2 2.1 V
3.8 mV/°C
mW
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Total Gate Charge Q
Gate Resistance R
C
ISS
OSS
RSS
G(TOT)
G(TH)
GS
GD
G(TOT)
G
VGS = 0 V, f = 1 MHz, VDS = 12 V
VGS = 4.5 V, VDS = 12 V; ID = 30 A
VGS = 10 V, VDS = 12 V; ID = 30 A 18.9 40 nC
TA = 25°C 1.0 2.0
1205 1812
835 1293
45 81
8.7 18.6
2.7 6.0
3.6 6.2
1.88 5.6
pF
nC
W
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
d(ON)
r
f
VGS = 4.5 V, VDS = 12 V, ID = 15 A,
= 3.0 W
R
G
8.9
32
14.6
3
ns
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
d(ON)
r
f
VGS = 10 V, VDS = 12 V,
ID = 15 A, RG = 3.0 W
6.0
27
18.6
2.3
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= 10 A
S
VGS = 0 V, dIS/dt = 100 A/ms,
I
= 10 A
S
TJ = 25°C 0.78 1.1
TJ = 125°C 0.6
30.8 66
15
15.8
20
V
ns
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTTFS4H05N
TYPICAL CHARACTERISTICS
4.2 V
140
4.5 V
10 V
120
100
80
60
40
, DRAIN CURRENT (A)
D
I
20
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.0050
0.0046
0.0042
0.0038
0.0034
0.0030
0.0026
0.0022
0.0018
0.0014
, DRAIN−TO−SOURCE RESISTANCE (W)
0.0010
DS(on)
R
Figure 3. On−Resistance vs. V
4.0 V
3.8 V
TJ = 25°C
VGS (V) ID, DRAIN CURRENT (A)
VGS = 3.6 V
VGS = 3.4 V
VGS = 3.2 V
VGS = 3.0 V
VGS = 2.8 V
VGS = 2.6 V
VGS = 2.4 V
ID = 30 A
GS
140
120
100
80
60
40
, DRAIN CURRENT (A)
D
I
20
3.02.52.01.51.00.50
0.0050
0.0046
0.0042
0.0038
0.0034
0.0030
0.0026
, DRAIN−TO−SOURCE RESISTANCE (W)
0.0022
981076543
DS(on)
R
VDS = 5 V
TJ = 125°C
TJ = 25°C
0
T = 25°C
VGS = 4.5 V
VGS = 10 V
50 100 120
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
TJ = −55°C
3.0 3.5
4.02.52.01.51.00.50
11090807060403020
1.7
1.6
1.5
1.4
1.3
1.2
1.1
, DRAIN−TO−SOURCE
1.0
0.9
DS(on)
R
RESISTANCE (NORMALIZED)
0.8
0.7
ID = 30 A
= 10 V
V
GS
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
1E−04
1E−05
1E−06
1E−07
, LEAKAGE (A)
1E−08
DSS
I
1E−09
1E−10
150
1251007550250−25−50
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4
VGS = 0 V
TJ = 150°C
TJ = 125°C
TJ = 85°C
TJ = 25°C
10
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
2520155
NTTFS4H05N
TYPICAL CHARACTERISTICS
2200
2000
1800
1600
1400
1200
1000
800
600
C, CAPACITANCE (pF)
400
200
0
1000
100
t, TIME (ns)
10
10
Q
T
TJ = 25°C
= 0 V
V
GS
C
iss
C
oss
8
6
Q
Q
4
gd
gs
2
C
rss
, GATE−TO−SOURCE VOLTAGE (V)
GS
0
V
2520151050
12
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDD = 12 V
= 15 A
I
D
V
= 10 V
GS
t
d(off)
t
f
t
r
t
d(on)
30
VGS = 0 V
25
20
TJ = 125°C TJ = 25°C
15
10
, SOURCE CURRENT (A)
S
I
5
TJ = 25°C
= 10 V
V
GS
V
= 12.0 V
DD
I
= 30 A
D
16 18
20141086420
1
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
1000
100
10
1
D
0.1
0 V < VGS < 10 V
, DRAIN CURRENT (A)
I
0.01
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
vs. Gate Resistance
R
Limit
DS(on)
Thermal Limit
Package Limit
Safe Operating Area
10 ms
100 ms
1 ms
10 ms
dc
0
100101
V
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.8
0.9
1.00.70.60.50.4
Figure 10. Diode Forward Voltage vs. Current
40
35
ID = 27 A
30
25
20
15
10
, SINGLE PULSE DRAIN−TO−
AS
5
E
SOURCE AVALANCHE ENERGY (mJ)
1001010.10.01
0
150125100755025
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
100
10
1
R(t) (°C/W)GFS (S)
0.1
50% Duty Cycle
20%
10%
5%
2%
1%
Single Pulse
NTTFS4H05N
TYPICAL CHARACTERISTICS
PCB Cu Area 650 mm
PCB Cu thk 1 oz
2
0.01
140
120
100
80
60
40
20
0.010.001 10.0001 0.10.00001 100.000001
PULSE TIME (sec)
100 1000
Figure 13. Thermal Characteristics
1E+03
1E+02
1E+01
, DRAIN CURRENT (A)
D
I
0
ID (A) PULSE WIDTH (sec)
Figure 14. GFS vs. I
D
140120100806040200
1E+00
1E−041E−051E−061E−07
Figure 15. Avalanche Characteristics
1E−03
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NTTFS4H05N
ORDERING INFORMATION
Device Package Shipping
NTTFS4H05NTAG WDFN8
(Pb-Free)
NTTFS4H05NTWG WDFN8
(Pb-Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
1500 / Tape & Reel
5000 / Tape & Reel
†
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
1
SCALE 2:1
0.05
E2
G
0.10 C
0.10 C
8X
C
A0.10 B
C
4X
E3
1234
TOP VIEW
SIDE VIEW
b
L
14
8
BOTTOM VIEW
D1
78
D2
2X
C
0.20
D
A
B
2X
56
E
E1
0.20 C
c
A
DETAIL A
e/2
K
M
5
L1
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
4X
q
A1
6X
e
DETAIL A
C
SEATING
PLANE
0.75
DATE 23 APR 2012
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
DIM MIN NOM
A1 0.00 −−−
D1 2.95 3.05
D2 1.98 2.11
E1 2.95 3.05
E2 1.47 1.60
E3 0.23 0.30 0.40
MILLIMETERS
A 0.70 0.75
b 0.23 0.30
c 0.15 0.20
D
E
e 0.65 BSC
G 0.30 0.41
K 0.65 0.80
L 0.30 0.43
L1 0.06 0.13
M 1.40 1.50
q 0 −−−
3.30 BSC
3.30 BSC
_
MAX
0.80
0.05
0.40
0.25
3.15
2.24
3.15
1.73
0.51
0.95
0.56
0.20
1.60
12
_
INCHES
MIN NOM
0.028 0.030
0.000 −−−
0.009 0.012
0.006 0.008
0.130 BSC
0.116 0.120
0.078 0.083
0.130 BSC
0.116 0.120
0.058 0.063
0.009 0.012 0.016
0.026 BSC
0.012 0.016
0.026 0.032
0.012 0.017
0.002 0.005
0.055 0.059
0 −−−
_
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.020
0.037
0.022
0.008
0.063
12
SOLDERING FOOTPRINT*
PACKAGE
OUTLINE
0.57
8X
0.650.42
PITCH
2.30
4X
0.66
3.60
_
GENERIC
MARKING DIAGRAM*
1
XXXXX
AYWWG
G
XXXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
DOCUMENT NUMBER:
DESCRIPTION:
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON30561E
WDFN8 3.3X3.3, 0.65P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
0.47
2.37
3.46
DIMENSION: MILLIMETERS
PAGE 1 OF 1
© Semiconductor Components Industries, LLC, 2019
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