ON Semiconductor NTTFS4H05N User Manual

NTTFS4H05N

MOSFET – Power, Single,

N-Channel, m8-FL

25 V, 94 A

Features

• Optimized Design to Minimize Conduction and Switching Losses

• Optimized Package to Minimize Parasitic Inductances

• Optimized material for improved thermal performance

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• High Performance DC-DC Converters

• System Voltage Rails

• Netcom, Telecom

• Servers & Point of Load

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Drain-to-Source Voltage V

Gate-to-Source Voltage V

Continuous Drain Current R
(T

= 25°C, Note 1)

A

Power Dissipation R
(T

= 25°C, Note 1)

A

Continuous Drain Current R
(T

= 25°C, Note 1)

C

Power Dissipation R
(T

= 25°C, Note 1)

C

Pulsed Drain Current (tp = 10 ms)

Single Pulse Drain-to-Source Avalanche
Energy (Note 1)
(IL = 41 Apk, L = 0.1 mH) (Note 3)

Drain to Source dV/dt dV/dt 7 V/ns

Maximum Junction Temperature T

Storage Temperature Range T

Lead Temperature Soldering Reflow (SMD
Styles Only), Pb-Free Versions (Note 2)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

1. Values based on copper area of 645 mm
and FR4 PCB substrate.

2. For more information, please refer to our Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

3. This is the absolute maximum rating. Parts are 100% UIS tested at T

= 10 V, IL = 27 A, EAS = 36 mJ.

V

GS

q

JA

q

JC

q

JA

q

JC

Symbol Value Units

DSS

GS

I

D

P

D

I

D

P

D

I

DM

E

AS

J(max)

STG

T

SLD

2

(or 1 in2) of 2 oz copper thickness

25 V

±20 V

22.4 A

2.66 W

94 A

46.3 W

304 A

84 mJ

150 °C

−55 to
150

260 °C

= 25°C,

J

°C

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V

GS

4.5 V

10 V

MAX R

4.8 mW

3.3 mW

DS(on)

TYP Q

MARKING DIAGRAM

1

WDFN8

(m8FL)

CASE 511AB

H05N = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

PIN CONNECTIONS

m8−FL (3.3 x 3.3 mm)

(Top View) (Bottom View)

N−CHANNEL MOSFET

G (4)

S
S
S
G

D (5−8)

1

H05N

AYWWG

G

S (1,2,3)

GTOT

8.7 nC

18.9 nC

D
D
D
D

© Semiconductor Components Industries, LLC, 2016

June, 2019 − Rev. 4

ORDERING INFORMATION

See detailed ordering and shipping information on page 7 of
this data sheet.

1 Publication Order Number:

NTTFS4H05N/D

THERMALCHARACTERISTICS

Parameter Symbol Max Units

Thermal Resistance,

Junction-to-Ambient (Note 1 and 4)
Junction-to-Case (Note 1 and 4)

4. Thermal Resistance R

q

and R

JA

R

q

JA

R

q

JC

as defined in JESD51−3.

q

JC

NTTFS4H05N

°C/W

47

2.7

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2

NTTFS4H05N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage

V

V

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS

T

J

DSS

GSS

VGS = 0 V, ID = 250 mA

/

VGS = 0 V,

V

= 20 V

DS

TJ = 25°C 1.0

TJ = 125°C 20

VDS = 0 V, VGS = 20 V 100 nA

25 V

15

mV/°C

mA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Negative Threshold Temperature Coefficient V

V

GS(TH)/TJ

Drain−to−Source On Resistance R

Forward Transconductance g

GS(TH)

DS(on)

FS

VGS = VDS, ID = 250 mA

VGS = 10 V ID = 30 A 2.5 3.3

VGS = 4.5 V ID = 30 A 3.8 4.8

VDS = 12 V, ID = 15 A 69 S

1.2 2.1 V

3.8 mV/°C

mW

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Total Gate Charge Q

Gate Resistance R

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

G(TOT)

G

VGS = 0 V, f = 1 MHz, VDS = 12 V

VGS = 4.5 V, VDS = 12 V; ID = 30 A

VGS = 10 V, VDS = 12 V; ID = 30 A 18.9 40 nC

TA = 25°C 1.0 2.0

1205 1812

835 1293

45 81

8.7 18.6

2.7 6.0

3.6 6.2

1.88 5.6

pF

nC

W

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

t

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

d(ON)

r

f

VGS = 4.5 V, VDS = 12 V, ID = 15 A,

= 3.0 W

R

G

8.9

32

14.6

3

ns

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

t

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

d(ON)

r

f

VGS = 10 V, VDS = 12 V,

ID = 15 A, RG = 3.0 W

6.0

27

18.6

2.3

ns

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

V

SD

RR

a

b

RR

VGS = 0 V,

I

= 10 A

S

VGS = 0 V, dIS/dt = 100 A/ms,

I

= 10 A

S

TJ = 25°C 0.78 1.1

TJ = 125°C 0.6

30.8 66

15

15.8

20

V

ns

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

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