ON Semiconductor NTTFS4H05N User Manual

NTTFS4H05N

MOSFET – Power, Single,

N-Channel, m8-FL

25 V, 94 A

Features

•Optimized Design to Minimize Conduction and Switching Losses

•Optimized Package to Minimize Parasitic Inductances

•Optimized material for improved thermal performance

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

•High Performance DC-DC Converters

•System Voltage Rails

•Netcom, Telecom

•Servers & Point of Load

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter	Symbol	Value	Units
Drain-to-Source Voltage	VDSS	25	V
Gate-to-Source Voltage	VGS	±20	V
Continuous Drain Current RqJA	ID	22.4	A
(TA = 25°C, Note 1)
Power Dissipation RqJA	PD	2.66	W
(TA = 25°C, Note 1)
Continuous Drain Current RqJC	ID	94	A
(TC = 25°C, Note 1)
Power Dissipation RqJC	PD	46.3	W
(TC = 25°C, Note 1)
Pulsed Drain Current (tp = 10 ms)	IDM	304	A
Single Pulse Drain-to-Source Avalanche	EAS	84	mJ
Energy (Note 1)
(IL = 41 Apk, L = 0.1 mH) (Note 3)
Drain to Source dV/dt	dV/dt	7	V/ns
Maximum Junction Temperature	TJ(max)	150	°C
Storage Temperature Range	TSTG	−55 to	°C
		150
Lead Temperature Soldering Reflow (SMD	TSLD	260	°C
Styles Only), Pb-Free Versions (Note 2)

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1.Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness and FR4 PCB substrate.

2.For more information, please refer to our Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

3.This is the absolute maximum rating. Parts are 100% UIS tested at TJ = 25°C,

VGS = 10 V, IL = 27 A, EAS = 36 mJ.

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VGS	MAX RDS(on)	TYP QGTOT
4.5 V	4.8 mW	8.7 nC
10 V	3.3 mW	18.9 nC

MARKING DIAGRAM

		1
1		S	H05N	D
WDFN8		S		D
(m8FL)		S	AYWWG	D
CASE 511AB		G	G	D
H05N	= Specific Device Code
A	= Assembly Location
Y	= Year
WW	= Work Week
G	= Pb−Free Package

(Note: Microdot may be in either location)

PIN CONNECTIONS m8−FL (3.3 x 3.3 mm)

(Top View)

(Bottom View)

N−CHANNEL MOSFET

D (5−8)

G (4)

S (1,2,3)

ORDERING INFORMATION

See detailed ordering and shipping information on page 7 of this data sheet.

♥ Semiconductor Components Industries, LLC, 2016	1	Publication Order Number:
June, 2019 − Rev. 4		NTTFS4H05N/D

NTTFS4H05N

THERMALCHARACTERISTICS

Parameter	Symbol	Max	Units
Thermal Resistance,			°C/W
Junction-to-Ambient (Note 1 and 4)	RqJA	47
Junction-to-Case (Note 1 and 4)	RqJC	2.7

4. Thermal Resistance RqJA and RqJC as defined in JESD51−3.

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NTTFS4H05N

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter	Symbol		Test Condition		Min	Typ	Max	Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage	V(BR)DSS	VGS = 0 V, ID = 250 mA			25			V
Drain−to−Source Breakdown Voltage	V(BR)DSS/					15		mV/°C
Temperature Coefficient	TJ
Zero Gate Voltage Drain Current	IDSS	VGS	= 0 V,	TJ = 25°C			1.0	mA
		VDS = 20 V
				TJ = 125°C			20
Gate−to−Source Leakage Current	IGSS	VDS = 0 V, VGS = 20 V					100	nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage	VGS(TH)	VGS = VDS, ID = 250 mA			1.2		2.1	V
Negative Threshold Temperature Coefficient	VGS(TH)/TJ					3.8		mV/°C
Drain−to−Source On Resistance	RDS(on)	VGS = 10 V		ID = 30 A		2.5	3.3	mW
		VGS = 4.5 V		ID = 30 A		3.8	4.8
Forward Transconductance	gFS	VDS = 12 V, ID = 15 A				69		S
CHARGES AND CAPACITANCES
Input Capacitance	CISS					1205	1812
Output Capacitance	COSS	VGS = 0 V, f = 1 MHz, VDS = 12 V				835	1293	pF
Reverse Transfer Capacitance	CRSS					45	81
Total Gate Charge	QG(TOT)					8.7	18.6
Threshold Gate Charge	QG(TH)	VGS = 4.5 V, VDS = 12 V; ID = 30 A				2.7	6.0	nC
Gate−to−Source Charge	QGS					3.6	6.2
Gate−to−Drain Charge	QGD					1.88	5.6
Total Gate Charge	QG(TOT)	VGS = 10 V, VDS = 12 V; ID = 30 A				18.9	40	nC
Gate Resistance	RG		TA = 25°C			1.0	2.0	W
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time	td(ON)					8.9
Rise Time	tr	VGS = 4.5 V, VDS = 12 V, ID = 15 A,				32		ns
Turn−Off Delay Time	td(OFF)		RG = 3.0 W			14.6
Fall Time	tf					3
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time	td(ON)					6.0
Rise Time	tr	VGS = 10 V, VDS		= 12 V,		27		ns
Turn−Off Delay Time	td(OFF)	ID	= 15 A, RG = 3.0 W			18.6
Fall Time	tf					2.3
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage	VSD	VGS	= 0 V,	TJ = 25°C		0.78	1.1	V
		IS = 10 A		°		0.6
				TJ = 125 C
Reverse Recovery Time	tRR					30.8	66
Charge Time	ta	VGS = 0 V, dIS/dt = 100 A/ms,				15		ns
Discharge Time	tb		IS = 10 A			15.8
Reverse Recovery Charge	QRR					20		nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5.Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6.Switching characteristics are independent of operating junction temperatures.

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