ON Semiconductor NTTFS030N06C User Manual
MOSFET - Power, Single
N-Channel, m8FL
60 V, 29.7 mW, 19 A
NTTFS030N06C
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low R
• Low Q
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Power Tools, Battery Operated Vacuums
• UAV/Drones, Material Handling
• BMS/Storage, Home Automation
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 3)
Power Dissipation
R
q
JC
Continuous Drain
Current R
(Notes 1, 2, 3)
Power Dissipation
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature
Range
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature Soldering Reflow for Soldering Purposes (1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
q
JC
(Note 1)
q
JA
(Notes 1, 2)
= 4.6 A)
L(pk)
= 25°C unless otherwise noted)
J
Symbol Value Unit
TC = 25°C
Steady
State
Steady
State
TA = 25°C, t
TC = 100°C 13
TC = 25°C
TC = 100°C 11
TA = 25°C
TA = 100°C 4
TA = 25°C
TA = 100°C 1.2
= 10 ms
p
P
P
I
TJ, T
E
2
, 2 oz. Cu pad.
DSS
GS
I
D
D
I
D
D
DM
S
AS
T
L
stg
60 V
±20 V
19
23
6
2.5
86 A
−55 to
+175
19 A
11 mJ
260 °C
A
W
A
W
°C
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V
(BR)DSS
60 V
G (4)
R
MAX ID MAX
DS(on)
29.7 mW @ 10 V
N−Channel
D (5 − 8)
S (1, 2, 3)
19 A
MARKING DIAGRAM
1
WDFN8
(m8FL)
CASE 511AB
30NC = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
1
S
30NC
S
AYWWG
S
G
G
D
D
D
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2020
January, 2020 − Rev. 1
1 Publication Order Number:
NTTFS030N06C/D
NTTFS030N06C
THERMAL RESISTANCE RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State (Note 4)
Junction−to−Ambient − Steady State (Note 4)
4. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
R
q
JC
R
q
JA
6.3
60
°C/W
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise noted)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
V
(BR)DSS/TJ
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
DSS
GSS
VGS = 0 V, ID = 250 mA
ID = 250 mA, referenced to 25°C
VGS = 0 V,
V
= 60 V
DS
TJ = 25°C 10 mA
TJ = 125°C 250
VDS = 0 V, VGS = 20 V 100 nA
60 V
32 mV/°C
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Treshold Temperature
Coefficient
V
GS(TH)
V
GS(TH)/TJ
Drain−to−Source On Resistance R
Forward Transconductance g
Gate−Resistance R
DS(on)
FS
G
VGS = VDS, ID = 13 mA
ID = 13 mA, referenced to 25°C
VGS = 10 V, ID = 3 A 24.7 29.7
VDS = 5 V, ID = 3 A 8.5 S
TA = 25°C 1.5
2.0 4.0 V
−7.9 mV/°C
mW
W
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
C
iss
oss
rss
G(TOT)
G(TH)
GS
GD
VGS = 0 V, f = 1 MHz,
V
= 30 V
DS
VGS = 10 V, VDS = 30 V, ID = 3 A
255
173
4.4
4.7
1.1
1.7
0.54
pF
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
Rise Time t
Turn−Off Delay Time t
Fall Time t
d(on)
d(off)
5.7
r
f
VGS = 10 V, VDS = 30 V,
= 3 A, RG = 6 W
I
D
1.2
8.7
2.3
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
VGS = 0 V,
IS = 3 A
RR
a
b
RR
VGS = 0 V, dlS/dt = 100 A/ms,
V
= 30 V, IS = 3 A
DS
TJ = 25°C 0.82 1.2
TJ = 125°C 0.68
21
11
10
9.7 nC
V
ns
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NTTFS030N06C
TYPICAL CHARACTERISTICS
60
VGS = 10 V to 8 V
50
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
50
45
40
35
25
7.0 V
6.0 V
5.0 V
4.5 V
3.6 V
3.02.52.01.51.00.50
TJ = 25°C
= 3 A
I
D
20
15
10
, DRAIN CURRENT (A)
D
I
5
0
36
32
28
1.00.55.04.54.03.5
TJ = 25°C
TJ = −55°C
TJ = 25°C
TJ = 125°C
1.5 3.5
2.5 4.0
3.02.00 4.5 5.0
VGS = 10 V
30
25
, DRAIN−TO−SOURCE RESISTANCE (mW)
20
DS(on)
R
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
DS(on)
R
5
6
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
87
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.5
2.0
1.5
1.0
0.5
0
VGS = 10 V
= 3 A
I
D
50
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
150
, DRAIN−TO−SOURCE RESISTANCE (mW)
109
DS(on)
R
, LEAKAGE (nA)
DSS
I
17512510075250−25−50
24
20
12 18 21
15 24963
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10K
TJ = 175°C
1K
TJ = 150°C
TJ = 125°C
100
TJ = 85°C
10
TJ = 25°C
1
25
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
554535155
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