ON Semiconductor NTTFS004N04C User Manual
NTTFS004N04C
MOSFET – Power, Single,
N-Channel
40 V, 4.9 mW, 77 A
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 2, 3, 4)
Power Dissipation
R
q
JC
Continuous Drain
Current R
(Notes 1, 3, 4)
Power Dissipation
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature
Range
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
q
JC
(Notes 1, 2, 3)
q
JA
(Notes 1, 3)
= 5.2 A)
L(pk)
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter Symbol Value Unit
Junction−to−Case − Steady State (Note 3)
Junction−to−Ambient − Steady State (Note 3)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
= 25°C unless otherwise noted)
J
Symbol Value Unit
TC = 25°C
Steady
State
Steady
State
TA = 25°C, t
TC = 100°C 43
TC = 25°C
TC = 100°C 18
TA = 25°C
TA = 100°C 13
TA = 25°C
TA = 100°C 1.6
= 10 ms
p
P
P
I
TJ, T
E
R
q
R
q
DSS
GS
I
D
D
I
D
D
DM
S
AS
T
L
JC
JA
stg
40 V
±20 V
77
55
18
3.2
338 A
−55 to
+175
45.5 A
122 mJ
260 °C
2.7
47.4
A
W
A
W
°C
°C/W
www.onsemi.com
V
(BR)DSS
40 V
G (4)
R
MAX ID MAX
DS(on)
4.9 mW @ 10 V
N−Channel
D (5 − 8)
77 A
S (1, 2, 3)
MARKING DIAGRAM
1
WDFN8
(m8FL)
CASE 511AB
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
1
S
XXXX
S
AYWWG
S
G
G
D
D
D
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2019
June, 2019 − Rev. 0
1 Publication Order Number:
NTTFS004N04C/D
NTTFS004N04C
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise noted)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
V
(BR)DSS
DSS
GSS
VGS = 0 V, ID = 250 mA
VGS = 0 V,
V
= 40 V
DS
VDS = 0 V, VGS = 20 V 100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Drain−to−Source On Resistance R
Forward Transconductance g
V
GS(TH)
DS(on)
FS
VGS = VDS, ID = 50 mA
VGS = 10 V, ID = 35 A 4.1 4.9
VDS = 15 V, ID = 35 A 57 S
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Total Gate Charge Q
C
iss
oss
rss
G(TH)
GS
GD
G(TOT)
VGS = 0 V, f = 1.0 MHz,
V
= 25 V
DS
VGS = 10 V, VDS = 32 V, ID = 35 A
VGS = 10 V, VDS = 32 V, ID = 35 A 18 nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t
Fall Time t
t
d(on)
d(off)
r
f
VGS = 10 V, VDS = 20 V,
I
= 35 A
D
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= 35 A
S
VGS = 0 V, dlS/dt = 100 A/ms,
I
= 35 A
S
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
40 V
TJ = 25°C 10 mA
TJ = 125°C 250
2.5 3.5 V
1150
600
25
3.7
5.7
3.0
12
80
26
8
TJ = 25°C 0.82 1.2
TJ = 125°C 0.69
33
16
17
18 nC
mW
pF
nC
ns
V
ns
www.onsemi.com
2
NTTFS004N04C
TYPICAL CHARACTERISTICS
200
180
160
140
120
100
80
60
, DRAIN CURRENT (A)
D
I
40
20
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
28
24
20
16
12
8
VGS = 10 V to 8 V
4.0 V
2 5.5
7.0 V
6.0 V
5.6 V
5.2 V
4.4 V
TJ = 25°C
= 35 A
I
D
4.8 V
120
100
80
60
40
, DRAIN CURRENT (A)
D
I
20
310
0
6
5
4
3
2
VDS = 10 V
TJ = 125°C
3.53.0
TJ = 25°C
TJ = 25°C
4.0
TJ = −55°C
4.5
VGS = 10 V
5.0
6.0
, DRAIN−TO−SOURCE RESISTANCE (mW)
DS(on)
R
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
DS(on)
R
4
0
54
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
7
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.0
VGS = 10 V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
= 35 A
I
D
50 175
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
1
, DRAIN−TO−SOURCE RESISTANCE (mW)
0
9
1086
515
DS(on)
R
25 45
35 55
65
75
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100K
TJ = 175°C
10K
1K
100
, LEAKAGE (nA)
10
DSS
I
1
15012510075250−25−50
0.1
TJ = 150°C
TJ = 125°C
TJ = 85°C
TJ = 25°C
10 20
40353025155
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
3
Loading...