ON Semiconductor NTR4003N Technical data

NTR4003N

Small Signal MOSFET

30 V, 0.56 A, Single N−Channel, SOT−23

Features

• Low Gate Voltage Threshold (V

Design

• Low Gate Charge for Fast Switching

• ESD Protected Gate

• SOT−23 Package Provides Excellent Thermal Performance

• Minimum Breakdown Voltage Rating of 30 V

• These are Pb−Free Devices

Applications

• Notebooks:

♦ Level Shifters
♦ Logic Switches
♦ Low Side Load Switches

• Portable Applications

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain

Current (Note 1)

Power Dissipation
(Note 1)

Continuous Drain
Current (Note 1)

Power Dissipation
(Note 1)

Pulsed Drain Current
Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I
Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − t < 10 s (Note 1)
Junction−to−Ambient − Steady State (Note 2)

1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).

2. Surface−mounted on FR4 board using the minimum recommended pad size.

= 25°C unless otherwise noted)

J

Steady
State

Steady State P

t < 10 s

t < 5 s P

tp = 10 ms

) to Facilitate Drive Circuit

GS(TH)

Symbol Value Unit

JA
JA
JA

30 V

±20 V

0.5

0.69 W

0.56

0.83 W

1.7 A

−55 to
150

1.0 A

260 °C

180
150
300

DSS

GS

TA = 25°C
TA = 85°C 0.37

TA = 25°C
TA = 85°C 0.40

I

D

I

D

I

DM

Tstg

S

T

R

q

R

q

R

q

D

D

L

A

A

°C

°C/W

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(BR)DSS

30 V

TYP

R

DS(on)

1.0 W @ 4.0 V

1.5 W @ 2.5 V

ID MAXV

0.56 A

N−Channel

3

1

2

MARKING DIAGRAM/

PIN ASSIGNMENT

3

1

2

SOT−23
CASE 318
STYLE 21

TR8 = Specific Device Code
M = Date Code
G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and overbar may vary

depending upon manufacturing location.

3

Drain

TR8 M G

G

1

Gate2Source

ORDERING INFORMATION

Device Package Shipping

NTR4003NT1G SOT−23

(Pb−Free)

NTR4003NT3G SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

3000/Tape & Reel

10,000/Tape & Reel

†

© Semiconductor Components Industries, LLC, 2006

May, 2006 − Rev. 0

1 Publication Order Number:

NTR4003N/D

NTR4003N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Units

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

VGS = 0 V, ID = 100 mA

VGS = 0 V,
V

= 30 V

DS

VDS = 0 V, VGS = ±10 V ±1.0

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage
Negative Threshold

Temperature Coefficient

Drain−to−Source On Resistance

Forward Transconductance g

V

GS(TH)

V

GS(TH)/TJ

R

DS(on)

FS

VGS = VDS, ID = 250 mA

VGS = 4.0 V, ID = 10 mA 1.0 1.5
VGS = 2.5 V, ID = 10 mA 1.5 2.0
VDS = 3.0 V, ID = 10 mA 0.33 S

CHARGES AND CAPACITANCES

Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Gate Charge Q
Gate−to−Drain Charge Q

C

iss
oss
rss

G(TOT)

G(TH)

GS
GD

VGS = 0 V, f = 1.0 MHz,

V

= 5.0 V

DS

V

= 5.0 V, V

GS

ID = 0.1 A

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t
Fall Time t

t

d(on)

d(off)

r

f

VGS = 4.5 V, VDD = 5.0 V,

= 0.1 A, RG = 50 W

I

D

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

V

SD

RR

VGS = 0 V,
I

= 10 mA

S

VGS = 0 V, dIS/dt = 8A/ms,

IS = 10 mA

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

30 V

40 mV/°C

TJ = 25°C 1.0

0.8 1.4 V

3.4 mV/°C

21

19.7

8.1

1.15

= 24 V,

DS

0.15

0.32

0.23

16.7

47.9

65.1

64.2

TJ = 25°C 0.65 0.7

TJ = 125°C 0.45

14 ns

mA

mA

W

pF

nC

ns

V

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