ON Semiconductor NTP75N06, NTB75N06 Technical data

查询NTB75N06供应商

NTP75N06, NTB75N06

Power MOSFET

75 Amps, 60 Volts, N−Channel

2

TO−220 and D

PAK

Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.

Features

• Pb−Free Packages are Available

T ypical Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MAXIMUM RATINGS (T

Drain−to−Source Voltage V
Drain−to−Gate Voltage (RGS = 10 M) V
Gate−to−Source Voltage

− Continuous

− Non−Repetitive (t

Drain Current

− Continuous @ T

− Continuous @ T

− Single Pulse (t

Total Power Dissipation @ TA = 25°C

Derate above 25°C

Total Power Dissipation @ T
Operating and Storage Temperature Range TJ, T

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

= 50 Vdc, VGS = 10 Vdc, L = 0.3 mH

(V

DD

I

= 75 A, VDS = 60 Vdc)

L(pk)

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.

= 25°C unless otherwise noted)

J

Rating Symbol Value Unit

stg

60 Vdc
60 Vdc

20
30

75
50

225
214

1.4

2.4

−55 to
+175

844 mJ

0.7

62.5
260 °C

Vdc

Adc

Apk

W

W/°C

W

°C

°C/W

10 ms)

p

= 25°C

A

= 100°C

A

10 s)

p

= 25°C

J

= 25°C

A

V
V

E

R
R

DSS
DGR

GS
GS

I
I

I

DM

P

AS





T

D
D

D

JC
JA

L

http://onsemi.com

75 AMPERES, 60 VOLTS

R

DS(on)

G

4

1

2

3

4

2

3

75N06 = Device Code
A = Assembly Location
Y = Year
WW = Work Week

= 9.5 m

N−Channel

D

TO−220

CASE 221A

STYLE 5

2

D

PAK

CASE 418B

STYLE 2

S

Gate

Gate

MARKING

DIAGRAMS

4

Drain

75N06

AYWW

1

1

2

Drain

4

Drain

75N06

AYWW

2

Drain

3
Source

3
Source

 Semiconductor Components Industries, LLC, 2004

August, 2004 − Rev. 2

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

1 Publication Order Number:

NTP75N06/D

NTP75N06, NTB75N06

)

f = 1.0 MHz)

(V

DD

30 Vdc, I

D

Adc

)

V

GS

Vdc) (Note 1)

)

dIS/dt = 100 A/s) (Note 1)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

J

Characteristic

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 1)

= 0 Vdc, ID = 250 Adc)

(V

GS

Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current

(V

= 60 Vdc, VGS = 0 Vdc)

DS

= 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

(V

DS

Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage (Note 1)

(V

= VGS, ID = 250 Adc)

DS

Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 1)

= 10 Vdc, ID = 37.5 Adc)

(V

GS

Static Drain−to−Source On−Voltage (Note 1)

(V

= 10 Vdc, ID = 75 Adc)

GS

= 10 Vdc, ID = 37.5 Adc, TJ = 150°C)

(V

GS

Forward Transconductance (Note 1) (VDS = 15 Vdc, ID = 37.5 Adc) g

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz

Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time
Rise Time
Turn−Off Delay Time

V

(V

= 30 Vdc, ID = 75 Adc,

DD

= 10 Vdc, RG = 9.1 ) (Note 1)

GS

75

,

Fall Time t
Gate Charge

(VDS = 48 Vdc, ID = 75 Adc,

= 10 Vdc) (Note 1

= 10

V

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 75 Adc, VGS = 0 Vdc) (Note 1)

= 75 Adc, VGS = 0 Vdc, TJ = 150°C)

(I

S

Reverse Recovery Time

(IS = 75 Adc, VGS = 0 Vdc,
dI

/dt = 100 A/s) (Note 1

Reverse Recovery Stored Charge Q

1. Pulse Test: Pulse Width ≤300 s, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperatures.

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

60

−

−

−

71
73

−

−

−

−

10

100

− − ±100 nAdc

2.0

−

2.8

8.0

4.0

−

Vdc

mV/°C

Adc

Vdc

mV/°C

m

− 8.2 9.5

V

DS(on)

C
C
C

t

d(on)

t

d(off)

V

FS

iss
oss
rss

−

−

− 40.2 − mhos

− 3220 4510 pF

− 1020 1430

− 234 330

0.72

0.63

0.86

−

− 16 25 ns

t

r

− 112 155

− 90 125

f

Q

T

Q

1

Q

2

SD

t

rr

t

a

t

b
RR

− 100 140

− 92 130 nC

− 14 −

− 44 −

−

−

1.0

0.9

1.1

−

− 77 −

− 49 −

− 28 −

− 0.16 − C

Vdc

Vdc

ns

http://onsemi.com

2

NTP75N06, NTB75N06

160

VGS = 10 V

140
120
100

80
60
40

, DRAIN CURRENT (AMPS)

D

I

20

0

0

V

, DRAIN−TO−SOURCE VOLTAGE (V)

DS

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.015
VGS = 10 V

0.013

0.011

VGS = 7 V

VGS = 8 V

VGS = 9 V

21

TJ = 100°C

VGS = 6.5 V

VGS = 6 V

VGS = 5.5 V

VGS = 5 V

VGS = 4.5 V
3

160

VDS  10 V

140
120
100

80
60
40

, DRAIN CURRENT (AMPS)

D

I

20

4

0.015

0.013

0.011

TJ = 100°C

0

2.5 3 7

VGS = 15 V

TJ = 25°C

TJ = −55°C

3.5 4 4.5 5 5.5 6 6.5

V

, GATE−TO−SOURCE VOLTAGE (V)

GS

TJ = 100°C

0.009

0.007

0.005

, DRAIN−TO−SOURCE RESISTANCE ()

0.003
080604020 100 160

DS(on)

R

ID, DRAIN CURRENT (AMPS)

TJ = 25°C

TJ = −55°C

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

2

ID = 37.5 A
V

= 10 V

GS

1.8

1.6

1.4

1.2

1

0.8

0.009

0.007

0.005

, DRAIN−TO−SOURCE RESISTANCE ()

120 140 0 80604020 100 160

0.003

DS(on)

R

ID, DRAIN CURRENT (AMPS)

TJ = 25°C

TJ = −55°C

120 140

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

10000

, LEAKAGE (nA)

DSS

I

1000

100

VGS = 0 V

TJ = 150°C

TJ = 125°C

TJ = 100°C

0.6

−50 50250−25 75 100

, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

DS(on)

R

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

10

175150125

04050302010 60

http://onsemi.com

3

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 6. Drain−to−Source Leakage Current

vs. Voltage