ON Semiconductor NTP60N06, NTB60N06 Technical data

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NTP60N06, NTB60N06

Power MOSFET

60 V, 60 A, N−Channel

2

TO−220 and D

PAK

Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.

Features

• Pb−Free Packages are Available

T ypical Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MAXIMUM RATINGS (T

Drain−to−Source Voltage V
Drain−to−Gate Voltage (RGS = 10 M) V
Gate−to−Source Voltage

− Continuous

− Non−Repetitive (t

Drain Current

− Continuous @ T

− Continuous @ T

− Single Pulse (t

Total Power Dissipation @ TA = 25°C

Derate above 25°C

Total Power Dissipation @ T
Operating and Storage Temperature Range TJ, T

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

= 75 Vdc, VGS = 10 Vdc, L = 0.3 mH

(V

DD

I

= 55 A, VDS = 60 Vdc)

L(pk)

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient (Note 1)

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.

1. When surface mounted to an FR4 board using minimum recommended pad

size, (Cu Area 0.412 in

= 25°C unless otherwise noted)

J

Rating Symbol Value Unit

stg

60 Vdc
60 Vdc

20
30

60

42.3
180

150

1.0

2.4

−55 to
+175

454 mJ

1.0

62.5
260 °C

Vdc

Adc

Apk

W

W/°C

W

°C

°C/W

10 ms)

p

= 25°C

A

= 100°C

A

10 s)

p

= 25°C

J

2

).

= 25°C (Note 1)

A

V
V

E

R
R

DSS
DGR

GS
GS

I
I

I

DM

P

AS





T

D
D

D

JC
JA

L

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60 VOLTS, 60 AMPERES

R

DS(on)

G

4

1

2

3

4

2

3

NTx60N06 = Device Code
x = P or B
A = Assembly Location
Y = Year
WW = Work Week

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.

= 14 m

N−Channel

D

TO−220

CASE 221A

STYLE 5

2

D

PAK

CASE 418B

STYLE 2

S

DIAGRAMS

1

Gate

Gate

MARKING

4

Drain

NTx60N06

AYWW

3
Source

2

Drain

4

Drain

NTx60N06

AYWW

2

1

Drain

3
Source

 Semiconductor Components Industries, LLC, 2004

October, 2004 − Rev. 3

1 Publication Order Number:

NTP60N06/D

NTP60N06, NTB60N06

)

f = 1.0 MHz)

(V

DD

30 Vdc, I

D

Adc

)

V

GS

Vdc) (Note 2)

)

dIS/dt = 100 A/s) (Note 2)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

J

Characteristic

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 2)

= 0 Vdc, ID = 250 Adc)

(V

GS

Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current

(V

= 60 Vdc, VGS = 0 Vdc)

DS

= 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

(V

DS

Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage (Note 2)

(V

= VGS, ID = 250 Adc)

DS

Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 2)

= 10 Vdc, ID = 30 Adc)

(V

GS

Static Drain−to−Source On−Voltage (Note 2)

(V

= 10 Vdc, ID = 60 Adc)

GS

= 10 Vdc, ID = 30 Adc, TJ = 150°C)

(V

GS

Forward Transconductance (Note 2) (VDS = 8.0 Vdc, ID = 12 Adc) g

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz

Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time
Rise Time
Turn−Off Delay Time

V

(V

= 30 Vdc, ID = 60 Adc,

DD

= 10 Vdc, RG = 9.1 ) (Note 2)

GS

60

,

Fall Time t
Gate Charge

(VDS = 48 Vdc, ID = 60 Adc,

= 10 Vdc) (Note 2

= 10

V

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 60 Adc, VGS = 0 Vdc) (Note 2)

= 45 Adc, VGS = 0 Vdc, TJ = 150°C)

(I

S

Reverse Recovery Time

(IS = 60 Adc, VGS = 0 Vdc,
dI

/dt = 100 A/s) (Note 2

Reverse Recovery Stored Charge Q

2. Pulse Test: Pulse Width ≤300 s, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

60

−

−

−

72.3

69.8

−

−

−

−

1.0
10

− − ±100 nAdc

2.0

−

2.85

8.0

4.0

−

Vdc

mV/°C

Adc

Vdc

mV/°C

m

− 11.5 14

V

DS(on)

C
C
C

t

d(on)

t

d(off)

V

FS

iss
oss
rss

−

−

− 35 − mhos

− 2300 3220 pF

− 660 925

− 144 300

0.715

1.43

1.01

−

− 25.5 50 ns

t

r

− 180.7 360

− 94.5 200

f

Q

T

Q

1

Q

2

SD

t

rr

t

a

t

b
RR

− 142.5 300

− 62 81 nC

− 10.8 −

− 29.4 −

−

−

0.99

0.87

1.05

−

− 64.9 −

− 44.1 −

− 20.8 −

− 0.146 − C

Vdc

Vdc

ns

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2

NTP60N06, NTB60N06

120

VGS = 10 V

9 V

100

8 V

80

60

40

, DRAIN CURRENT (AMPS)

20

D

I

0

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

0.026

0.022

0.018

VDS = 10 V

7 V

TJ = 100°C

6 V

5.5 V

5 V

4.5 V

4

120

VDS ≥ 10 V

100

80

60

40

, DRAIN CURRENT (AMPS)

20

D

I

53210

0.026

0.022

0.018

TJ = 100°C

0

VGS = 15 V

TJ = 25°C

TJ = −55°C

7

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

TJ = 100°C

86543

0.014

0.01

, DRAIN−TO−SOURCE RESISTANCE ()

0.006

DS(on)

R

TJ = 25°C

TJ = −55°C

40200

ID, DRAIN CURRENT (AMPS)

80 100

Figure 3. On−Resistance versus Gate−to−Source

Voltage

2.2
ID = 30 A

2

V

= 10 V

GS

1.8

1.6

1.4

1.2

1

0.8

0.6

DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

DS(on),

R

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

150

12060

1751251007550250−25−50

0.014
TJ = 25°C

0.01

40200

TJ = −55°C

80 100

, DRAIN−TO−SOURCE RESISTANCE ()

0.006

DS(on)

R

0

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

10,000

1000

, LEAKAGE (nA)

DSS

I

100

10

VGS = 0 V

TJ = 150°C

TJ = 125°C

TJ = 100°C

100

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

20 60

30 40 50

Figure 6. Drain−to−Source Leakage Current

versus V oltage

12060

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