ON Semiconductor NTP35N15 Technical data

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NTP35N15

Preferred Device

Power MOSFET
37 Amps, 150 Volts

N−Channel TO−220

Features

• Source−to−Drain Diode Recovery Time Comparable to a Discrete

Fast Recovery Diode

• Avalanche Energy Specified

• I

and R

DSS

T ypical Applications

• PWM Motor Controls

• Power Supplies

• Converters

MAXIMUM RATINGS (T

Drain−to−Source Voltage V
Drain−to−Source Voltage (RGS = 1.0 MΩ) V
Gate−to−Source Voltage

− Continuous

− Non−Repetitive (t

Drain Current

− Continuous @ T

− Continuous @ T

− Pulsed (Note 1.)

Total Power Dissipation @ TA = 25°C

Derate above 25°C

Operating and Storage Temperature Range TJ, T

Single Drain−to−Source Avalanche Energy −

Starting T
(V

= 100 Vdc, VGS = 10 Vdc,

DD

I

(pk) = 21.6 A, L = 3.0 mH, RG = 25 Ω)

L

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

1. Pulse Test: Pulse Width = 10 µs, Duty Cycle = 2%.

Specified at Elevated Temperature

DS(on)

= 25°C unless otherwise noted)

C

Rating Symbol Value Unit

DSS
DGR

V

V

I

E

R
R

GS

GSM

I

D

I

D

DM

P

D

AS

θ

JC

θ

JA

T

L

stg

= 25°C

J

10 ms)

p

25°C

A

100°C

A

150 Vdc
150 Vdc

20
40

37
23

111
178

1.43WW/°C

−55 to
+150

700 mJ

0.7

62.5
260 °C

Vdc

Adc

°C

°C/W

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37 AMPERES

150 VOLTS

50 mΩ @ V

N−Channel

G

4

TO−220AB

CASE 221A

STYLE 5

1

2

3

NTP35N15 = Device Code
LL = Location Code
Y = Year
WW = Work Week

= 10 V

GS

D

S

MARKING DIAGRAM
& PIN ASSIGNMENT

4

Drain

NTP35N15
LLYWW

1

Gate

2

Drain

3
Source

 Semiconductor Components Industries, LLC, 2003

December, 2003 − Rev. 2

ORDERING INFORMATION

Device Package Shipping

NTP35N15 TO−220AB 50 Units/Rail

Preferred devices are recommended choices for future use
and best overall value.

1 Publication Order Number:

NTP35N15/D

NTP35N15

)

f = 1.0 MHz)

R

G

9.1 Ω)
)

V

GS

Vdc)

)

dIS/dt = 100 A/µs)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(V

= 0 Vdc, ID = 250 µAdc)

GS

Temperature Coefficient (Positive)
Zero Gate Voltage Collector Current

= 0 Vdc, VDS = 150 Vdc, TJ = 25°C)

(V

GS

= 0 Vdc, VDS = 150 Vdc, TJ = 125°C)

(V

GS

Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0) I

ON CHARACTERISTICS

Gate Threshold Voltage

= V

V

DS

ID = 250 µAdc)

GS,

Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance

= 10 Vdc, ID = 18.5 Adc)

(V

GS

(V

= 10 Vdc, ID = 18.5 Adc, TJ = 125°C)

GS

Drain−to−Source On−Voltage

= 10 Vdc, ID = 18.5 Adc)

(V

GS

Forward Transconductance (VDS = 10 Vdc, ID = 18.5 Adc) g

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Notes 2. & 3.)

Turn−On Delay Time

(V

= 120 Vdc, ID = 37 Adc,

Rise Time
Turn−Off Delay Time

DD

VGS = 10 Vdc,

R

= 9.1 Ω)

G

Fall Time
Gate Charge

(VDS = 120 Vdc, ID = 37 Adc,

V

= 10 Vdc

= 10

BODY−DRAIN DIODE RATINGS (Note 2.)

Forward On−Voltage

(IS = 37 Adc, VGS = 0 Vdc)

(I

= 37 Adc, VGS = 0 Vdc, TJ = 125°C)

S

Reverse Recovery Time

(IS = 37 Adc, VGS = 0 Vdc,

dI

/dt = 100 A/µs

Reverse Recovery Stored Charge Q

2. Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperature.

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

V

DS(on)

150

−

−

−

−

240

−

−

−

−

5.0
50

− − ±100 nAdc

2.0

−

−

−

2.9

−8.56

4.0

−

0.042−0.050

0.120

Vdc

mV/°C

µAdc

Vdc

mV/°C

Vdc

− 1.55 1.78

− 26 − mhos

− 2275 3200 pF

− 450 650

− 90 175

− 20 35 ns

− 125 225

− 90 175

− 120 210

− 70 100 nC

− 14 −

− 32 −

−

−

− 170 −

1.00

0.88

1.5

−

Vdc

ns

− 112 −

− 58 −

− 1.14 − µC

C
C
C

t

d(on)

t

d(off)

Q

Q

Q

V

t
t
t

FS

iss
oss
rss

t

r

t

f
tot
gs
gd

SD

rr

a
b

RR

Ω

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2

NTP35N15

70

VGS = 10 V

60

V

= 9 V

GS

50

40

30

20

, DRAIN CURRENT (AMPS)

D

10

I

0

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

0.1
VDS = 10 V

0.08

0.06

V

V

= 7 V

GS

V

= 6 V

GS

TJ = 100°C

GS

V

GS

= 8 V

= 5.5 V

TJ = 25°C

V

GS

V

= 4.5 V

GS

V

= 4 V

GS

89

= 5 V

70

60

50

40

30

20

, DRAIN CURRENT (AMPS)

D

I

10

1076543210

0

0.055

0.05

0.45

VDS ≥ 10 V

TJ = 25°C

TJ = 100°C

TJ = −55°C

765432

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

TJ = 25°C

VGS = 10 V

0.04

0.02

, DRAIN−TO−SOURCE RESISTANCE ()

0

DS(on)

R

ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus Drain Current

2.5

ID = 18.5 A

2.25

V

= 10 V

GS

2.0

1.75

1.5

1.25

1.0

0.75

0.5

0.25
0

DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

TJ, JUNCTION TEMPERATURE (°C)

DS(on),

R

Figure 5. On−Resistance Variation with

TJ = 25°C

TJ = −55°C

and Temperature

Temperature

0.40

VGS = 15 V

0.35

, DRAIN−TO−SOURCE RESISTANCE ()

50403020100

7060

0.03

DS(on)

R

403020100

ID, DRAIN CURRENT (AMPS)

60

7050

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

1501251007550250−25−50

10,000

, LEAKAGE (nA)

DSS

I

1000

100

10

VGS = 0 V

TJ = 150°C

TJ = 100°C

504030

7060 15080

10090 110 120 130 140

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−to−Source Leakage Current

versus V oltage

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