ON Semiconductor NTP2955 User Manual

NTP2955

&

MOSFET – Power, Single,

P-Channel, TO-220

-60 V, -12 A

Features

• Low R

DS(on)

• Rugged Performance

• Fast Switching

• These are Pb−Free Devices*

Applications

• Industrial

• Automotive

• Power Supplies

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain

Current (Note 1)

Power Dissipation

(Note 1)

Continuous Drain

Current (Note 1)

Power Dissipation

(Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche

Energy (VDD = −30 V, VG = −10 V,

= −12 A, L = 3.0 mH, RG = 3.0 W)

I

PK

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

= 25°C unless otherwise noted)

J

Symbol Value Unit

Steady

State

Steady

State

TC = 25°C

TC = 85°C −9.0

TC = 25°C P

TA = 25°C

TA = 85°C −1.8

TA = 25°C P

tp =10 ms

D

L

−60 V

±20 V

−12

62.5 W

−2.4

2.4 W

−42 A

−55 to

175

−12 A

260 °C

DSS

GS

I

D

I

D

I

DM

T

STG

S

EAS 216 mJ

T

°C

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(BR)DSS

−60 V

DS(on)

156 mW @ −10 V

P−Channel

D

G

Typ

S

ID MAXV

−12 A

R

MARKING DIAGRAM

PIN ASSIGNMENT

A

1

2

3

TO−220

CASE 221A

STYLE 5

A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package

D

NT2955G

AYWW

1

DS

G

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Case

Junction−to−Ambient − Steady State (Note 1)

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

June, 2019 − Rev. 3

R

q

JC

R

q

JA

°C/W

2.4

62.5

1 Publication Order Number:

ORDERING INFORMATION

Device Package Shipping

NTP2955G TO−220

(Pb−Free)

50 Units / Rail

NTP2955/D

NTP2955

1. When surface mounted to an FR4 board using 1 in pad size (Cu. area = 1.127 in sq [1 oz] including traces).

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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2

NTP2955

ELECTRICAL CHARACTERISTICS (T

Parameter

=25°C unless otherwise stated)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V

Drain−to−Source Breakdown Voltage Temperature Coefficient

V

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

V

GS

DS

V

= 0 V, I

GS

= 0 V,

= −48 V

= 0 V, V

DS

= −250 mA

D

T

J

= ±20 V ±100 nA

GS

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Negative Threshold Temperature Coefficient

Drain−to−Source On Resistance R

Forward Transconductance g

V

GS(TH)

V

GS(TH)/TJ

DS(on)

FS

V

= VDS, ID = −250 mA

GS

V

= −10 V, I

GS

V

= −60 V, I

DS

= −12 A

D

= −12 A 6.0 S

D

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

V

= 0 V, f = 1.0 MHz,

GS

V

DS

V

= −10 V, V

GS

I

D

= −25 V

DS

= −12 A

= −48 V,

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(on)

d(off)

r

f

V

GS

I

D

= −10 V, V = −12 A, R

DD

= 9.1 W

G

= −30 V,

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

V

SD

RR

a

b

RR

V

= 0 V,

GS

I

= −12 A

S

V

= 0 V, dIS/dt = 100 A/ms,

GS

I

S

= −12 A

T

J

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

−60 V

67 mV/°C

= 25°C −1.0 mA

J

= 125°C −10

−2.0 −4.0 V

56 mV/°C

156 196

507 700

150 250

48 98

14

1.6 2.5

3.4

6.2

10 20

41 80

27 47

45 85

= 25°C −1.6 −2.0

J

= 125°C −1.36

53

42

12

126 nC

mW

pF

nC

ns

V

ns

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