ON Semiconductor NTNS4C69N User Manual

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Page 1

MOSFET – Single,

N-Channel, Small Signal, SOT-883 (XDFN3),

1.0 x 0.6 x 0.4 mm

30 V, 1000 mA

NTNS4C69N

Features

• Single N−Channel MOSFET

• Ultra Low Profile SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm for

Extremely Thin Environments such as Portable Electronics

• Low R

• 1.8 V Gate Drive

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• High Side Switch

• High Speed Interfacing

• Level Shift and Translate

• Optimized for DC−DC Converter Power Management in Ultra

Portable Solutions

MAXIMUM RATINGS (T

Drain-to-Source Voltage V

Gate-to-Source Voltage V

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature

Source Current (Body Diode) (Note 2) I

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE RATINGS

Junction-to-Ambient – Steady State (Note 1)

Junction-to-Ambient – t ≤ 5 s (Note 1)

1. Surface Mounted on FR4 Board using the minimum recommended pad size, (or 2 mm

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

Solution in Ultra Small 1.0 x 0.6 mm Package

DS(on)

= 25°C unless otherwise stated)

Parameter Symbol Value Units

DSS

Parameter

), 1 oz Cu.

Steady

State

t ≤ 5 s TA = 25°C 1050

Steady

State

t ≤ 5 s TA = 25°C 187

TA = 25°C

TA = 85°C 721

TA = 25°C

tp = 10 ms

TJ,

STG

Symbol Max Units

θJA

30 V

±12 V

1000

178

2.6 A

-55 to 150

187 mA

260 °C

703

670

°C/W

°C

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MOSFET

MAX ID MAXV

(BR)DSS

30 V

DS(on)

0.155 W @ 4.5 V

0.168 W @ 3.7 V

0.180 W @ 3.3 V

0.220 W @ 2.5 V

0.450 W @ 1.8 V

N−Channel MOSFET

D (3)

G (1)

1000 mA

S (2)

MARKING

SOT−883

(XDFN3)

CASE 506CB

AA = Specific Device Code M = Date Code

DIAGRAM

AA M

ORDERING INFORMATION

Device Package Shipping

NTNS4C69NTCG SOT−883

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

(Pb−Free)

Tape & Reel

†

8000 /

November, 2019 − Rev. 4

1 Publication Order Number:

NTNS4C69N/D

Page 2

NTNS4C69N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

Symbol Test Condition Min Typ Max Units

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

Drain-to-Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate-to-Source Leakage Current I

(BR)DSS

(BR)DSS/TJ

DSS

GSS

VGS = 0 V, ID = 250 mA

ID = 250 mA, ref to 25°C

VGS = 0 V,

= 24 V

TJ = 25°C 1.0

30 V

17 mV/°C

VDS = 0 V, VGS = 12 V 100 nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Negative Gate Threshold Temperature Coefficient

Drain-to-Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 10 mA

0.65 1.1 V

−3.0 mV/°C

VGS = 4.5 V, ID = 300 mA 0.127 0.155

VGS = 3.7 V, ID = 250 mA 0.135 0.168

VGS = 3.3 V, ID = 200 mA 0.140 0.180

VGS = 2.5 V, ID = 150 mA 0.170 0.220

VGS = 1.8 V, ID = 100 mA 0.300 0.450

Forward Transconductance g

Source−Drain Diode Voltage V

VDS = 5 V, ID = 200 mA 2.0 S

VGS = 0 V, IS = 100 mA 0.7 1.0 V

CHARGES & CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

VGS = 0 V, f = 1 MHz,

= 15 V

VGS = 4.5 V, VDS = 15 V,

= 200 mA

3.0

0.9

0.1

0.2

0.1

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3)

Turn-On Delay Time

d(ON)

Rise Time t

Turn-Off Delay Time t

d(OFF)

Fall Time t

4.5

VGS = 4.5 V, VDD = 15 V,

= 200 mA, RG = 2 W

3.5

9.0

7.0

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Switching characteristics are independent of operating junction temperatures.

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NTNS4C69N

TYPICAL CHARACTERISTICS

, DRAIN CURRENT (A)R

450

400

350

300

250

200

150

, DRAIN−TO−SOURCE RESISTANCE (mW)

100

DS(on)

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

VGS = 4.5 V to 2.9 V

2.5 4.5

4.0

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

TJ = 25°C I

2.5

VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

2.5 V

2.2 V

2.0 V

1.8 V

1.6 V

1.4 V

= 0.3 A

4.5

4.0

3.5

3.0

2.5

2.0

1.5

, DRAIN CURRENT (A)

1.0

0.5

400 380 360 340 320 300 280 260 240 220 200 180 160 140

120

, DRAIN−TO−SOURCE RESISTANCE (mW)

100

DS(on)

5.03.53.02.01.51.00.50

5.04.03.53.02.01.5

VDS = 5 V

TJ = 25°C

TJ = 125°C

0.1 0.2 1.00.3 0.5 0.6 0.7

TJ = −55°C

VGS = 1.8 V

VGS = 2.5 V

VGS = 3.3 V

VGS = 4.5 V

2.5

TJ = 25°C

VGS = 3.7 V

0.8

0.90.40

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

3.02.01.51.00.5

1.6

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

, DRAIN−TO−SOURCE RESISTANCE (Normalized)

DS(on)

VGS = 10 V I

−50 −25

= 0.3 A

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

10,000

1000

100

, LEAKAGE (nA)

DSS

0.1

1501251007550250

0.01

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TJ = 150°C

TJ = 125°C

TJ = 85°C

TJ = 25°C

2515105

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

3020

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NTNS4C69N

TYPICAL CHARACTERISTICS

1000

100

C, CAPACITANCE (pF)

100

t, TIME (ns)

iss

oss

rss

20151050

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

VGS = 4.5 V

= 15 V

= 0.2 A

VGS = 0 V

= 25°C

f = 1 MHz

25 30

d(off)

d(on)

VDS = 15 V

= 0.2 A

= 25°C

, GATE−TO−SOURCE VOLTAGE (V)

0.4 0.8 1.4 1.8

QG, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source vs. Total Charge

VGS = 0 V

0.1

TJ = 125°C

0.01

, SOURCE CURRENT (A)

1.2

1.00.60.20

1.6

2.0

TJ = −55°CTJ = 25°C

101

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

0.1

0.01

, DRAIN CURRENT (A)

0.001

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

100

0.001

Figure 10. Diode Forward Voltage vs. Current

0 V ≤ VGS ≤ 10 V Single Pulse TA = 25°C T

= 150°C

Limit

DS(on)

Thermal Limit Package Limit

0.1

Figure 11. Safe Operating Area

0.70.60.50.40.3

0.8

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

10 ms

100 ms

1 ms

10 ms

1001010.01

0.9

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Page 5

1000

100

(t) (°C/W)

NTNS4C69N

TYPICAL CHARACTERISTICS

50% Duty Cycle

20%

10% 5%

Single Pulse

0.1

0.010.001 10.0001 0.10.00001 100.000001

PULSE TIME (sec)

Figure 12. Thermal Characteristics

100 1000

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Page 6

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SOT−883 (XDFN3), 1.0x0.6, 0.35P

SCALE 8:1

NOTE 3

A B

REFERENCE

PIN ONE

0.10 C

TOP VIEW

SIDE VIEW

SEATING PLANE

CASE 506CB

ISSUE A

DATE 30 MAR 2012

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. EXPOSED COPPER ALLOWED AS SHOWN.

MILLIMETERS

DIM MIN MAX

A 0.340 0.440

A1 0.000 0.030

b 0.075 0.200 D 0.950 1.075

D2 0.620 BSC

e 0.350 BSC E 0.550 0.675

E2 0.425 0.550

L 0.170 0.300

GENERIC

MARKING DIAGRAM*

e/2

0.10 BC

0.05 C

BOTTOM VIEW

RECOMMENDED

SOLDER FOOTPRINT*

1.10

0.43 1

2X PACKAGE

0.20

DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

0.41

0.55

OUTLINE

XX M

XX = Specific Device Code M = Date Code

*This information is generic. Please refer

to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present.

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98AON65407E

SOT−883 (XDFN3), 1.0X0.6, 0.35P

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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ON Semiconductor NTNS4C69N User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual