ON Semiconductor NTNS4C69N User Manual

MOSFET – Single,

N-Channel, Small Signal,
SOT-883 (XDFN3),

1.0 x 0.6 x 0.4 mm

30 V, 1000 mA

NTNS4C69N

Features

• Single N−Channel MOSFET

• Ultra Low Profile SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm for

Extremely Thin Environments such as Portable Electronics

• Low R

• 1.8 V Gate Drive

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• High Side Switch

• High Speed Interfacing

• Level Shift and Translate

• Optimized for DC−DC Converter Power Management in Ultra

Portable Solutions

MAXIMUM RATINGS (T

Drain-to-Source Voltage V

Gate-to-Source Voltage V

Continuous Drain
Current (Note 1)

Power Dissipa­tion (Note 1)

Pulsed Drain Current

Operating Junction and Storage
Temperature

Source Current (Body Diode) (Note 2) I

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE RATINGS

Junction-to-Ambient – Steady State (Note 1)

Junction-to-Ambient – t ≤ 5 s (Note 1)

1. Surface Mounted on FR4 Board using the minimum recommended pad size,
(or 2 mm

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

Solution in Ultra Small 1.0 x 0.6 mm Package

DS(on)

= 25°C unless otherwise stated)

J

Parameter Symbol Value Units

DSS

GS

Parameter

2

), 1 oz Cu.

Steady

State

t ≤ 5 s TA = 25°C 1050

Steady

State

t ≤ 5 s TA = 25°C 187

TA = 25°C

TA = 85°C 721

TA = 25°C

tp = 10 ms

I

D

P

D

I

DM

TJ,

T

STG

S

T

L

Symbol Max Units

R

θJA

R

θJA

30 V

±12 V

1000

178

2.6 A

-55 to
150

187 mA

260 °C

703

670

°C/W

mA

mW

°C

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MOSFET

R

MAX ID MAXV

(BR)DSS

30 V

DS(on)

0.155 W @ 4.5 V

0.168 W @ 3.7 V

0.180 W @ 3.3 V

0.220 W @ 2.5 V

0.450 W @ 1.8 V

N−Channel MOSFET

D (3)

G (1)

1000 mA

S (2)

MARKING

3

1

2

SOT−883

(XDFN3)

CASE 506CB

AA = Specific Device Code
M = Date Code

DIAGRAM

AA M

ORDERING INFORMATION

Device Package Shipping

NTNS4C69NTCG SOT−883

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

(Pb−Free)

Tape & Reel

†

8000 /

© Semiconductor Components Industries, LLC, 2017

November, 2019 − Rev. 4

1 Publication Order Number:

NTNS4C69N/D

NTNS4C69N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Units

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

Drain-to-Source Breakdown Voltage
Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate-to-Source Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

VGS = 0 V, ID = 250 mA

ID = 250 mA, ref to 25°C

VGS = 0 V,

V

= 24 V

DS

TJ = 25°C 1.0

30 V

17 mV/°C

VDS = 0 V, VGS = 12 V 100 nA

mA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Negative Gate Threshold
Temperature Coefficient

Drain-to-Source On Resistance R

V

GS(TH)

V

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 10 mA

0.65 1.1 V

−3.0 mV/°C

VGS = 4.5 V, ID = 300 mA 0.127 0.155

W

VGS = 3.7 V, ID = 250 mA 0.135 0.168

VGS = 3.3 V, ID = 200 mA 0.140 0.180

VGS = 2.5 V, ID = 150 mA 0.170 0.220

VGS = 1.8 V, ID = 100 mA 0.300 0.450

Forward Transconductance g

Source−Drain Diode Voltage V

FS

SD

VDS = 5 V, ID = 200 mA 2.0 S

VGS = 0 V, IS = 100 mA 0.7 1.0 V

CHARGES & CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

VGS = 0 V, f = 1 MHz,

V

= 15 V

DS

VGS = 4.5 V, VDS = 15 V,

I

= 200 mA

D

75

34

3.0

0.9

0.1

0.2

0.1

pF

nC

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3)

Turn-On Delay Time

t

d(ON)

Rise Time t

Turn-Off Delay Time t

d(OFF)

Fall Time t

4.5

r

f

VGS = 4.5 V, VDD = 15 V,

= 200 mA, RG = 2 W

I

D

3.5

9.0

7.0

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Switching characteristics are independent of operating junction temperatures.

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2

NTNS4C69N

TYPICAL CHARACTERISTICS

, DRAIN CURRENT (A)R

D

I

450

400

350

300

250

200

150

, DRAIN−TO−SOURCE RESISTANCE (mW)

100

DS(on)

R

5

4

3

2

1

0

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

VGS = 4.5 V to 2.9 V

2.5 4.5

4.0

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

TJ = 25°C
I

D

2.5

VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

2.5 V

2.2 V

2.0 V

1.8 V

1.6 V

1.4 V

= 0.3 A

4.5

4.5

4.0

3.5

3.0

2.5

2.0

1.5

, DRAIN CURRENT (A)

1.0

D

I

0.5

400
380
360
340
320
300
280
260
240
220
200
180
160
140

120

, DRAIN−TO−SOURCE RESISTANCE (mW)

100

DS(on)

R

0

5.03.53.02.01.51.00.50

5.04.03.53.02.01.5

VDS = 5 V

TJ = 25°C

TJ = 125°C

0

0.1 0.2 1.00.3 0.5 0.6 0.7

TJ = −55°C

VGS = 1.8 V

VGS = 2.5 V

VGS = 3.3 V

VGS = 4.5 V

2.5

TJ = 25°C

VGS = 3.7 V

0.8

0.90.40

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

3.02.01.51.00.5

1.6

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

, DRAIN−TO−SOURCE RESISTANCE (Normalized)

DS(on)

VGS = 10 V
I

D

−50 −25

= 0.3 A

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

10,000

1000

100

10

, LEAKAGE (nA)

1

DSS

I

0.1

1501251007550250

0.01

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3

TJ = 150°C

TJ = 125°C

TJ = 85°C

TJ = 25°C

2515105

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

3020