ON Semiconductor NTNS3193NZ User Manual

NTNS3193NZ

MOSFET – Single

N-Channel, Small Signal,
XLLGA3, 0.62 x 0.62 x 0.4

20 V, 224 mA

Features

• Single N−Channel MOSFET

• Ultra Small and Thin Package (0.62 x 0.62 x 0.4 mm)

• Low R

• 1.5 V Gate Voltage Rating

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Solution in 0.62 x 0.62 mm Package

DS(on)

(BR)DSS

20 V

http://onsemi.com

MOSFET

MAX ID MAXV

R

DS(on)

1.4 W @ 4.5 V

1.9 W @ 2.5 V

2.2 W @ 1.8 V

4.3 W @ 1.5 V

224 mA

Applications

• Small Signal Load Switch

• Analog Switch

• High Speed Interfacing

• Optimized for Power Management in Ultra Portable Products

MAXIMUM RATINGS (T

Parameter Symbol Value Units

Drain-to-Source Voltage V

Gate-to-Source Voltage V

Continuous Drain
Current (Note 1)

Power Dissipa­tion (Note 1)

Pulsed Drain Current

Operating Junction and Storage
Temperature

Source Current (Body Diode) I

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient – Steady State (Note 1)

Junction-to-Ambient – t ≤ 5 s (Note 1)

1. Surface Mounted on FR4 Board using the minimum recommended pad size,
(or 2 mm

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

2

), 1 oz Cu.

= 25°C unless otherwise stated)

J

DSS

GS

Steady

State

t ≤ 5 s TA = 25°C 241

Steady

State

t ≤ 5 s TA = 25°C 139

TA = 25°C

TA = 85°C 162

TA = 25°C

tp = 10 ms

I

D

P

D

I

DM

TJ,

T

STG

S

T

L

Symbol Max Units

R

θJA

R

θJA

±8.0 V

224

120

673 mA

-55 to
150

120 mA

260 °C

1040

900

20 V

mA

mW

°C

°C/W

N−Channel MOSFET

D (3)

G (1)

S (2)

MARKING
DIAGRAM

3

2

1

XLLGA3

CASE 713AB

A = Specific Device Code
M = Date Code

1

A M

ORDERING INFORMATION

Device Package Shipping

NTNS3193NZT5G XLLGA3

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

8000 /

Tape & Reel

†

© Semiconductor Components Industries, LLC, 2012

June, 2019 − Rev. 1

1 Publication Order Number:

NTNS3193NZ/D

NTNS3193NZ

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Units

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

Drain-to-Source Breakdown Voltage
Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate-to-Source Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

VGS = 0 V, ID = 250 mA

ID = −250 mA, ref to 25°C

VGS = 0 V,

V

= 20 V

DS

VDS = 0 V, VGS = ±8.0 V ±2.0

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Negative Gate Threshold
Temperature Coefficient

Drain-to-Source On Resistance R

V

GS(TH)

V

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 4.5 V, ID = 100 mA 0.65 1.4

VGS = 2.5 V, ID = 50 mA 0.9 1.9

VGS = 1.8 V, ID = 20 mA 1.1 2.2

VGS = 1.5 V, ID = 10 mA 1.4 4.3

Forward Transconductance g

Source−Drain Diode Voltage V

FS

SD

VDS = 5 V, ID = 100 mA 0.56 S

VGS = 0 V, IS = 10 mA 0.55 1.0 V

CHARGES & CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

VGS = 0 V, f = 1 MHz,

V

= 15 V

DS

VGS = 4.5 V, VDS = 15 V,

I

= 200 mA

D

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3)

Turn-On Delay Time

Rise Time t

Turn-Off Delay Time t

Fall Time t

t

d(ON)

r

d(OFF)

f

VGS = 4.5 V, VDD = 15 V,

= 200 mA, RG = 2 W

I

D

3. Switching characteristics are independent of operating junction temperatures.

20 V

19 mV/°C

TJ = 25°C 1.0

0.4 1.0 V

1.9 mV/°C

15.8

3.5

2.4

0.70

0.05

0.14

0.10

18

35

201

110

mA

mA

W

pF

nC

ns

http://onsemi.com

2

NTNS3193NZ

TYPICAL CHARACTERISTICS

1.0

0.9

3.5 V

0.8

4.0 V

0.7

4.5 V

0.6

0.5

0.4

0.3

, DRAIN CURRENT (A)

D

I

0.2

0.1

0

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

VGS = 2.5 V3.0 V

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

, DRAIN−TO−SOURCE RESISTANCE (W)

DS(on)

R

0

VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)

TJ = 25°C

= 0.1 A

I

D

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

1.8

1.7

1.6

1.5

1.4

1.3

1.2

1.1

RESISTANCE

1.0

0.9

0.8

, NORMALIZED DRAIN−TO−SOURCE

0.7

−50 −25 0 25 50 75 100 125 150

DS(on)

R

, JUNCTION TEMPERATURE (°C)

T

J

VGS = 4.5 V

= 100 mA

I

D

VGS = 1.8 V
I

D

Figure 5. On−Resistance Variation with

Temperature

2.0 V

1.8 V

1.5 V

1.2 V

4.03.5 4.53.02.52.01.51.0

= 20 mA

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

, DRAIN CURRENT (A)

D

I

0.2

0.1

3.02.52.01.51.00.50

0

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

, DRAIN−TO−SOURCE RESISTANCE (W)

0

DS(on)

R

1000

100

, LEAKAGE (nA)

10

DSS

I

1

VDS = 5 V

TJ = −55°C

TJ = 25°C

TJ = 125°C

TJ = 25°C

VGS = 1.5 V

VGS = 1.8 V

VGS = 2.5 V

VGS = 4.5 V

0.4 0.8 0.9

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

TJ = 125°C

TJ = 85°C

820

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

1816141210642

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

3.02.52.01.51.00.50

1.00.70.60.50.30.20.10

http://onsemi.com

3