ON Semiconductor NTMS7N03R2 Technical data

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NTMS7N03R2

Power MOSFET 7 Amps, 30 Volts

N-Channel SO-8

Features

• Ultra Low R

• Higher Efficiency Extending Battery Life

• Logic Level Gate Drive

• Miniature SO-8 Surface Mount Package

• Avalanche Energy Specified

• I

Specified at Elevated Temperature

DSS

T ypical Applications

• DC-DC Converters

• Power Management

• Motor Controls

• Inductive Loads

• Replaces MMSF7N03HD, MMSF7N03Z, and MMSF5N03HD in

Many Applications

DS(on)

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7 AMPERES

30 VOLTS

= 23 m

N-Channel

D

G

R

DS(on)

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Drain-to-Source Voltage V Drain-to-Gate Voltage (RGS = 1.0 MΩ) V Gate-to-Source Voltage - Continuous V Thermal Resistance - Junction to Ambient

(Note 1) Total Power Dissipation @ TA = 25°C P Drain Current - Continuous @ TA = 25°C

Drain Current - Continuous @ T Drain Current - Pulsed (Note 4)

Thermal Resistance - Junction to Ambient

(Note 2) Total Power Dissipation @ TA = 25°C P Drain Current - Continuous @ TA = 25°C

Drain Current - Continuous @ T Drain Current - Pulsed (Note 4)

Thermal Resistance - Junction to Ambient

(Note 3) Total Power Dissipation @ TA = 25°C P Drain Current - Continuous @ TA = 25°C

Drain Current - Continuous @ T Drain Current - Pulsed (Note 4)

Operating and Storage Temperature Range TJ, T

Single Pulse Drain-to-Source Avalanche

Energy - Starting T

(V

= 30 Vdc, VGS = 10 Vdc, Peak

DD

I

= 12 Apk, L = 4.0 mH, RG = 25 Ω)

L

1. 2″ SQ. FR-4 PCB mounting, (2 oz. Cu 0.06″ thick single sided), 10 Sec. Max.

2. 2″ SQ. FR-4 PCB mounting, (2 oz. Cu 0.06″ thick single sided), t = steady state.

3. Minimum FR4 or G10 PCB, t = steady state.

4. Pulse test: Pulse Width = 300 µs, Duty Cycle = 2%.

= 25°C unless otherwise noted)

C

= 70°C

A

= 70°C

A

= 70°C

A

= 25°C

J

R

E

DSS DGR

GS

θ

I I

I

DM

θ

I I

I

DM

θ

I I

I

DM

AS

30 Vdc 30 Vdc

± 20 Vdc

JA

D

D D

JA

D

D D

JA

D

D D

stg

50 °C/W

2.5 Watts

8.5

6.8 25

85 °C/W

1.47 Watts

6.5

5.2 18

156 °C/W

0.8 Watts

4.8

3.8 14

- 55 to +150

288 mJ

Adc

Apk

Adc

Apk

Adc

Apk

°C

S

MARKING DIAGRAM

SO-8

8

1

CASE 751 STYLE 13

E7N03 = Device Code A = Assembly Location Y = Year WW = Work Week

E7N03 AYWW

PIN ASSIGNMENT

N-C Source Source

Gate

1 2 3 4

Top View

Drain

8

Drain

7

Drain

6 5

Drain

ORDERING INFORMATION

Device Package Shipping

NTMS7N03R2 SO-8 2500/Tape & Reel

 Semiconductor Components Industries, LLC, 2002

November, 2002 - Rev. 3

1

Publication Order Number:

NTMS7N03R2/D

NTMS7N03R2

)

f = 1.0 MHz)

R

G

9.1 Ω) (Note 5)

R

G

9.1 Ω) (Note 5)

(V

DS

Vdc, I

D

Adc

(I

S

Adc, V

GS

Vdc

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage (Notes 5 and 7)

= 0 Vdc, ID = 0.25 mAdc)

(V

GS

Temperature Coefficient (Positive)

Zero Gate Voltage Drain Current

(V

= 30 Vdc, VGS = 0 Vdc)

DS

= 30 Vdc, VGS = 0 Vdc, TJ = 125°C)

(V

DS

Gate-Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) I

ON CHARACTERISTICS

Gate Threshold Voltage (Note 5)

= VGS, ID = 0.25 mAdc)

(V

DS

Threshold Temperature Coefficient (Negative)

Static Drain-to-Source On-Resistance (Notes 5 and 7)

(V

= 10 Vdc, ID = 7.0 Adc)

GS

(V

= 4.5 Vdc, ID = 3.5 Adc)

GS

Drain-to-Source On-Voltage (VGS = 10 Vdc, ID = 5.0 Adc) (Notes 5 and 7) V Forward Transconductance (VDS = 15 Vdc, ID = 2.0 Adc) (Note 5) g

DYNAMIC CHARACTERISTICS

Input Capacitance Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz

Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 6)

Turn-On Delay Time

(V

= 10 Vdc, ID = 5.0 Adc,

Rise Time Turn-Off Delay Time

DD

VGS = 4.5 Vdc,

= 9.1 Ω) (Note 5)

R

G

Fall Time Turn-On Delay Time t

(V

= 10 Vdc, ID = 5.0 Adc,

Rise Time Turn-Off Delay Time

DD

VGS = 10 Vdc, = 9.1 Ω) (Note 5)

R

G

Fall Time Gate Charge

(VDS = 16 Vdc, ID = 5.0 Adc,

16

V

= 10 Vdc) (Note 5)

GS

5.0

,

SOURCE-DRAIN DIODE CHARACTERISTICS

Forward On-Voltage (Note 5)

(IS = 7.0 Adc, VGS = 0 Vdc) (Note 5)

= 7.0 Adc, VGS = 0 Vdc,

(I

S

= 125°C)

T

J

Reverse Recovery Time

(IS = 7.0 Adc, VGS = 0 Vdc,

7.0

dI

/dt = 100 A/µs) (Note 5)

S

0

,

Reverse Recovery Stored Charge Q

5. Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤ 2%.

6. Switching characteristics are independent of operating junction temperature.

7. Reflects Typical Values.

Max limit  Typ

Cpk 



3  



V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

C C C

t

d(on)

t

d(off)

d(on)

t

d(off)

Q

Q Q Q

V

t t t

FS

iss oss rss

t

r

t

f

t

r

t

f

SD

rr

a

b RR

30

-

41

-

mV/°C

µAdc

Vdc

-

0.02

-

1.0 10

- - 100 nAdc

Vdc

1.0

-

1.6

4.0

3.0

-

mV/°C

m

-

18.6

23.5

23 28

- 93 115 mV

3.0 13 - Mhos

- 1064 1190 pF

- 300 490

- 94 120

- 15 30

ns

- 71 185

- 27 70

- 38 80

- 8.0 -

- 38 -

- 33 -

- 49

T 1 2 3

- 26 43

- 3.1 -

- 6.0 -

- 5.5 -

-

0.82

0.67

1.1

-

- 27 -

nC

Vdc

ns

- 15 -

- 11.5 -

- 0.02 - µC

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NTMS7N03R2

ATTRIBUTES

Characteristics Value

ESD Protection Human Body Model

Machine Model Charged Device Model

TYPICAL ELECTRICAL CHARACTERISTICS

Class 1E

Class A Class 0

20 18 16 14 12 10

, DRAIN CURRENT (AMPS)

D

I

VGS = 10 V

8 V

7 V

6 V

5 V

8 6 4 2

0

0 0.1 0.2 0.3 1

V

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

DS

0.4 0.5

3.6 V

3.8 V

4 V

4.6 V

TJ = 25°C

2.4 V

0.8 0.9

Figure 1. On-Region Characteristics

3.4 V

3.2 V

3 V

2.8 V

10

9

VDS = 10 V 8 7

6 5 4 3

, DRAIN CURRENT (AMPS)

2

D

I

1 0

0 0.5 1 3.5

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

TJ = 100°C

1.50.6 0.7 2

-55°C

2.5 3

Figure 2. Transfer Characteristics

25°C

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NTMS7N03R2

TYPICAL ELECTRICAL CHARACTERISTICS

0.6

0.5

0.4

0.3

0.2

0.1

0

, DRAIN-TO-SOURCE RESISTANCE (OHMS)

13 957

DS(on)

R

24 10

, GATE-TO-SOURCE VOLTAGE (VOLTS)

V

GS

Figure 3. On-Resistance versus

68

Gate-T o-Source Voltage

2

VGS = 10 V

= 3.5 A

I

D

1.5

ID = 3.5 A T

= 25°C

J

0.05 TJ = 25°C

0.04

0.03

VGS = 4.5 V

0.02

0.01

0

, DRAIN-TO-SOURCE RESISTANCE (OHMS)

0 5 10 15

DS(on)

R

Figure 4. On-Resistance versus Drain Current

ID, DRAIN CURRENT (AMPS)

10 V

and Gate Voltage

1000

VGS = 0 V

TJ = 125°C

100

1

(NORMALIZED)

0.5

, DRAIN-TO-SOURCE RESISTANCE

DS(on)

0

R

-50-250 25 50 75 100 125 150 , JUNCTION TEMPERATURE (°C)

T

J

Figure 5. On-Resistance Variation with

Temperature

TJ = 100°C

, LEAKAGE (nA)

10

DSS

I

1

0102030

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 6. Drain-To-Source Leakage

Current versus Voltage

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ON Semiconductor NTMS7N03R2 Technical data

Specifications and Main Features

Frequently Asked Questions

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