ON Semiconductor NTMS5P02, NVMS5P02 User Manual
NTMS5P02, NVMS5P02
MOSFET – Power, Single,
P-Channel, Enhancement
Mode, SOIC-8
-5.4 A, -20 V
Features
• High Density Power MOSFET with Ultra Low R
Providing Higher Efficiency
• Miniature SOIC−8 Surface Mount Package − Saves Board Space
• Diode Exhibits High Speed with Soft Recovery
• I
Specified at Elevated Temperature
DSS
• Drain−to−Source Avalanche Energy Specified
• Mounting Information for the SOIC−8 Package is Provided
• These Devices are Pb−Free and are RoHS Compliant
• NVMS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Applications
• Power Management in Portable and Battery−Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
DS(on)
V
DSS
−20 V
8
SOIC−8
CASE 751
STYLE 13
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R
DS(ON)
26 mW @ −4.5 V
Single P−Channel
D
G
MARKING DIAGRAM &
PIN ASSIGNMENT
1
TYP ID MAX
−5.4 A
S
DD DD
8
E5P02x
AYWW G
G
1
NC S S G
© Semiconductor Components Industries, LLC, 2012
June, 2019 − Rev. 3
E5P02 = Specific Device Code
x = Blank or S
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package
NTMS5P02R2G SOIC−8
(Pb−Free)
NVMS5P02R2G SOIC−8
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
1 Publication Order Number:
Shipping
2500 / Tape & Reel
2500 / Tape & Reel
NTMS5P02R2/D
†
NTMS5P02, NVMS5P02
MAXIMUM RATINGS (T
Drain−to−Source Voltage V
Drain−to−Gate Voltage (RGS = 1.0 mW)
Gate−to−Source Voltage − Continuous V
= 25°C unless otherwise noted)
J
Rating
Symbol Value Unit
−20 V
−20 V
±10 V
V
DSS
DGR
GS
Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
Continuous Drain Current @ 25°C
= 25°C
A
Continuous Drain Current @ 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
R
q
JA
P
D
I
D
I
D
P
D
I
D
I
DM
50
2.5
−7.05
−5.62
1.2
−4.85
−28
°C/W
W
A
A
W
A
A
Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
Continuous Drain Current @ 25°C
= 25°C
A
Continuous Drain Current @ 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
R
q
JA
P
D
I
D
I
D
P
D
I
D
I
DM
85
1.47
−5.40
−4.30
0.7
−3.72
−20
°C/W
W
A
A
W
A
A
Thermal Resistance −
Junction−to−Ambient (Note 3)
Total Power Dissipation @ T
Continuous Drain Current @ 25°C
= 25°C
A
R
P
Continuous Drain Current @ 70°C
Maximum Operating Power Dissipation
P
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
I
DM
Operating and Storage Temperature Range TJ, T
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C
= −20 Vdc, VGS = −5.0 Vdc, Peak IL = −8.5 Apk, L = 10 mH, RG = 25 W)
(V
DD
E
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T
q
JA
D
I
D
I
D
D
I
D
stg
AS
L
159
0.79
°C/W
W
−3.95
−3.15
0.38
W
−2.75
−12
−55 to +150 °C
360 mJ
260 °C
A
A
A
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds.
2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t = steady state.
3. Minimum FR−4 or G−10 PCB, t = Steady State.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
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NTMS5P02, NVMS5P02
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Note 5)
C
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
= 0 Vdc, ID = −250 mAdc)
GS
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
= −16 Vdc, VGS = 0 Vdc, TJ = 25°C)
(V
DS
(V
= −16 Vdc, VGS = 0 Vdc, TJ = 125°C)
DS
(V
= −20 Vdc, VGS = 0 Vdc, TJ = 25°C)
DS
Gate−Body Leakage Current
= −10 Vdc, VDS = 0 Vdc)
(V
GS
Gate−Body Leakage Current
= +10 Vdc, VDS = 0 Vdc)
(V
GS
ON CHARACTERISTICS
Gate Threshold Voltage
(V
= VGS, ID = −250 mAdc)
DS
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
= −4.5 Vdc, ID = −5.4 Adc)
(V
GS
(V
= −2.5 Vdc, ID = −2.7 Adc)
GS
Forward Transconductance (VDS = −9.0 Vdc, ID = −5.4 Adc) g
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance C
(VDS = −16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Reverse Transfer Capacitance C
SWITCHING CHARACTERISTICS (Notes 6 & 7)
Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t
(VDD = −16 Vdc, ID = −1.0 Adc,
= −4.5 Vdc,
V
GS
R
= 6.0 W)
G
Fall Time t
Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t
(VDD = −16 Vdc, ID = −5.4 Adc,
= −4.5 Vdc,
V
GS
R
= 6.0 W)
G
Fall Time t
Total Gate Charge
Gate−Source Charge Q
Gate−Drain Charge Q
(VDS = −16 Vdc,
= −4.5 Vdc,
V
GS
I
= −5.4 Adc)
D
BODY−DRAIN DIODE RATINGS (Note 6)
Diode Forward On−Voltage (IS = −5.4 Adc, VGS = 0 V)
= −5.4 Adc, VGS = 0 Vdc, TJ = 125°C)
(I
S
Reverse Recovery Time
(IS = −5.4 Adc, VGS = 0 Vdc,
dI
/dt = 100 A/ms)
S
Reverse Recovery Stored Charge Q
5. Handling precautions to protect against electrostatic discharge is mandatory.
6. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.
7. Switching characteristics are independent of operating junction temperature.
Symbol Min Ty p Max Unit
V
(BR)DSS
I
DSS
I
GSS
−20
−
−
−
−
−
−15
−
−
−0.2
−
−
−1.0
−10
−
Vdc
mV/°C
mAdc
nAdc
− − −100
I
GSS
nAdc
− − 100
V
GS(th)
R
DS(on)
C
t
d(on)
d(off)
t
d(on)
d(off)
Q
V
t
t
t
FS
iss
oss
rss
r
f
r
f
tot
gs
gd
SD
rr
a
b
RR
−0.65
−
−
−
−0.9
2.9
0.026
0.037
−1.25
−
0.033
0.048
− 15 − Mhos
− 1375 1900 pF
− 510 900
− 200 380
− 18 35
− 25 50
− 70 125
− 55 100
− 22 −
− 70 −
− 65 −
− 90 −
− 20 35
− 4.0 −
− 7.0 −
−
−
−0.95
−0.72
−1.25
−
− 40 75
− 20 −
− 20 −
− 0.03 −
Vdc
mV/°C
ns
ns
nC
Vdc
ns
mC
W
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