ON Semiconductor NTMS4937N User Manual

NTMS4937N

MOSFET – Power,

N-Channel, SO-8

30 V, 13.6 A

Features

• Low R

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• DC−DC Converters

• Points of Loads

• Power Load Switch

• Motor Controls

MAXIMUM RATINGS (T

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain
Current R

Power Dissipation R
(Note 1)

Continuous Drain
Current R

Power Dissipation R
(Note 2)

Continuous Drain
Current R
(Note 1)

Power Dissipation

, t v 10 s(Note 1)

R

q

JA

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche Energy
(T

= 25°C, VDD = 30 V, VGS = 10 V,

J

= 13 Apk, L = 1.0 mH, RG = 25 W)

I

L

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

THERMAL RESISTANCE MAXIMUM RATINGS

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – t v 10 s (Note 1)

Junction−to−Foot (Drain)

Junction−to−Ambient – Steady State (Note 2)

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

to Minimize Conduction Losses

DS(on)

= 25°C unless otherwise stated)

J

Parameter

Steady

(Note 1)

q

JA

(Note 2)

q

JA

, t v 10 s

q

JA

Parameter Symbol Value Unit

State

Steady

q

JA

State

Steady

State

q

JA

Steady

State

Steady

State

TA = 25°C, tp = 10 ms

Symbol Value Unit

DSS

GS

TA = 25°C

TA = 70°C 9.0

TA = 25°C P

TA = 25°C

TA = 70°C 6.9

TA = 25°C P

TA = 25°C

TA = 70°C 11

TA = 25°C P

I

D

D

I

D

D

I

D

D

I

DM

T

stg

S

E

AS

T

L

R

q

JA

R

q

JA

R

q

JF

R

q

JA

30 V

±20 V

11.2

1.36 W

8.6

0.81 W

13.6

2.0 W

112 A

−55 to
150

2.1 A

84.5 mJ

260 °C

91.9

61.1

22.6

154.7

A

A

A

°C

°C/W

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V

(BR)DSS

30 V

R

DS(ON)

6.5 mW @ 10 V

8.7 mW @ 4.5 V

N−Channel

G

MAX ID MAX

13.6 A

D

S

MARKING DIAGRAM/

PIN ASSIGNMENT

1

SO−8
CASE 751
STYLE 12

4937N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

Source
Source
Source

18

AYWWG

4937N

G

Gate

Top View

Drain
Drain
Drain
Drain

ORDERING INFORMATION

Device Package Shipping

NTMS4937NR2G SO−8

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

2500/Tape & Reel

†

© Semiconductor Components Industries, LLC, 2009

June, 2019− Rev. 0

1 Publication Order Number:

NTMS4937N/D

NTMS4937N

1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).

2. Surfacemounted on FR4 board using the minimum recommended pad size.

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NTMS4937N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage
Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

VGS = 0 V, ID = 250 mA

VGS = 0 V, VDS = 24 V

VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Negative Threshold Temperature
Coefficient

Drain−to−Source On Resistance R

V

GS(TH)

V

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V, ID = 7.5 A 5.4 6.5 mW

VGS = 4.5 V, ID = 6.5 A 7.1 8.7

Forward Transconductance g

FS

VDS = 1.5 V, ID = 7.5 A 27.3 S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Total Gate Charge Q

C

iss

oss

rss

G(TOT)

G(TH)

GS

GD

G(TOT)

VGS = 0 V, f = 1.0 MHz, VDS = 25 V

VGS = 4.5 V, VDS = 15 V, ID = 7.5 A

VGS = 10 V, VDS = 15 V, ID = 7.5 A 38.5 nC

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(on)

d(off)

r

f

VGS = 10 V, VDS = 15 V,

= 1.0 A, RG = 6.0 W

I

D

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

V

SD

RR

a

b

RR

VGS = 0 V, IS = 2.0 A

VGS = 0 V, dIS/dt = 100 A/ms,

I

= 2.0 A

S

PACKAGE PARASITIC VALUES

Source Inductance

Drain Inductance L

Gate Inductance L

Gate Resistance R

L

S

D

G

G

TA = 25°C

3. Pulse Test: pulse width = 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

30 V

13.1 mV/°C

TJ = 25°C 1.0 mA

TJ = 125°C 10

1.0 2.5 V

5.1 mV/°C

2563

715

25

17.4

4.1

6.6

3.3

12.3

3.6

33.8

38.9

TJ = 25°C 0.72 1.0

TJ = 125°C 0.56

40

18.8

21.2

38 nC

0.66

0.2

1.5

0.4 1.0

pF

nC

ns

V

ns

nH

W

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