ON Semiconductor NTMS4802N User Manual

NTMS4802N

MOSFET – Power,

N-Channel, SO-8

30 V, 18 A

Features

• Low R

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• This is a Pb−Free Device

Applications

• DC−DC Converters

• Synchronous MOSFET

• Printers

to Minimize Conduction Losses

DS(on)

V

(BR)DSS

30 V

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R

MAX ID MAX

DS(ON)

4.0 mW @ 10 V

5.5 mW @ 4.5 V

N−Channel

D

18 A

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain
Current R

Power Dissipation R
(Note 1)

Continuous Drain
Current R

Power Dissipation R
(Note 2)

Continuous Drain
Current R
(Note 1)

Power Dissipation
R

q

JA

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche Energy
(T

= 25°C, VDD = 30 V, VGS = 10 V,

J

= 29 Apk, L = 1.0 mH, RG = 25 W)

I

L

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

(Note 1)

q

JA

(Note 2)

q

JA

, t v 10 s

q

JA

, t v 10 s(Note 1)

= 25°C unless otherwise stated)

J

TA = 25°C

TA = 70°C 12

q

JA

Steady

State

q

JA

TA = 25°C, tp = 10 ms

TA = 25°C P

TA = 25°C

TA = 70°C 8.9

TA = 25°C P

TA = 25°C

TA = 70°C 15

TA = 25°C P

Symbol Value Unit

I

T

E

DSS

GS

I

D

D

I

D

D

I

D

D

DM

stg

S

AS

T

L

30 V

±20 V

15

1.66 W

11.1

0.91 W

18

2.5 W

60 A

−55 to
150

2.5 A

420 mJ

260 °C

°C

G

A

S

MARKING DIAGRAM/

PIN ASSIGNMENT

A

A

1

SO−8
CASE 751
STYLE 12

4802N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

Source
Source
Source

18

AYWWG

4802N

G

Gate

Top View

Drain
Drain
Drain
Drain

ORDERING INFORMATION

Device Package Shipping

NTMS4802NR2G SO−8

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

2500/Tape & Reel

†

© Semiconductor Components Industries, LLC, 2008

June, 2019 − Rev. 0

1 Publication Order Number:

NTMS4802N/D

NTMS4802N

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – t v 10 s (Note 1)

Junction−to−Foot (Drain)

Junction−to−Ambient – Steady State (Note 2)

R

q

JA

R

q

JA

R

q

JF

R

q

JA

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Surfacemounted on FR4 board using 1 in sq pad size.

2. Surfacemounted on FR4 board using the minimum recommended pad size.

75.5

50.5

22

138

°C/W

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage
Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

VGS = 0 V, VDS = 24 V

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Negative Threshold Temperature
Coefficient

Drain−to−Source On Resistance R

Forward Transconductance g

V

GS(TH)

V

GS(TH)/TJ

DS(on)

FS

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Total Gate Charge Q

C

iss

oss

rss

G(TOT)

G(TH)

GS

GD

G(TOT)

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(on)

d(off)

r

f

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

V

SD

VGS = 0 V, ID = 250 mA

30 V

26 mV/°C

TJ = 25°C 1.0 mA

TJ = 85°C 10

VDS = 0 V, VGS = ±20 V ±100 nA

VGS = VDS, ID = 250 mA

1.0 2.5 V

7.0 mV/°C

VGS = 10 V, ID = 18 A 3.2 4.0 mW

VGS = 4.5 V, ID = 15 A 4.3 5.5

VDS = 1.5 V, ID = 18 A 55 S

5300

VGS = 0 V, f = 1.0 MHz, VDS = 25 V

880

460

36

6.5

VGS = 4.5 V, VDS = 15 V, ID = 18 A

14

13

VGS = 10 V, VDS = 15 V, ID = 18 A 75 nC

18

VGS = 10 V, VDS = 15 V,

= 1.0 A, RG = 6.0 W

I

D

42

70

56

TJ = 25°C 0.7 1.0

VGS = 0 V, IS = 2.5 A

TJ = 125°C 0.6

pF

nC

ns

V

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2

NTMS4802N

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

J

Parameter UnitMaxTypMinTest ConditionSymbol

DRAIN−SOURCE DIODE CHARACTERISTICS

Reverse Recovery Time

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

t

RR

a

b

RR

VGS = 0 V, dIS/dt = 100 A/ms,

I

= 2.5 A

S

PACKAGE PARASITIC VALUES

Source Inductance

Drain Inductance L

Gate Inductance L

Gate Resistance R

L

S

D

G

G

TA = 25°C

3. Pulse Test: pulse width = 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

40

ns

20

20

40 nC

0.66 nH

0.20 nH

1.5 nH

1.0 1.5

W

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