ON Semiconductor NTMS4404N Technical data

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NTMS4404N

Power MOSFET

30 V, 12 A, Single N−Channel, SO−8

Features

• High Density Power MOSFET with Ultra Low R

Efficiency

• Miniature SO−8 Surface Mount Package Saving Board Space

• I

Specified at Elevated Temperature

DSS

• Diode Exhibits High Speed, Soft Recovery

Applications

• Power Management for Battery Power Products

• Portable Products

• Computers, Printers, PCMCIA Cards

• Cell Phones, Cordless Telephones

DS(on)

for Higher

(BR)DSS

30 V

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TYP

R

DS(on)

9.7 m @ 10 V

15.5 m @ 4.5 V

N−Channel

D

ID MAXV

12 A

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain

Current (Note 1) State

Power Dissipation
(Note 1)

Continuous Drain
Current (Note 2) State

Power Dissipation
(Note 2)

Pulsed Drain Current tp = 10 s, DC = 2 % I
Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche

Energy (VDD = 20 V, VGS = 5 V, IPK = 7.25 A,
L = 19 mH, R

Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)

= 25 )

G

= 25°C unless otherwise stated)

J

Symbol Value Unit

DSS

GS

Steady

tp 10 s TA = 25°C 12

Steady

TA = 25°C
TA = 70°C 7.6

Steady State

tp 10 s 2.5

TA = 25°C
TA = 70°C 5.6
TA = 25°C P

T

P

E

I

D

D

I

D

D

DM

STG

S

AS

T

L

30 V

20 V

9.6

1.56

7.0

0.83 W

50 A

−55 to
150

6.0 A

500 mJ

260 °C

A

W

A

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient – Steady State (Note 1) R
Junction−to−Ambient – t = 1 0 s (Note 1) R
Junction−to−Ambient – Steady State (Note 2) R

1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces)

2. Surface−mounted on FR4 board using the minimum recommended pad
size (Cu area = 0.412 in sq.)



JA



JA



JA

80
50

150

°C/W

G

S

MARKING DIAGRAM/

PIN ASSIGNMENT

18

E4404N

1

SO−8
CASE 751
STYLE 12

Source
Source
Source

Gate

E4404N= Device Code
L = Assembly Location
Y = Year
WW = Work Week

LYWW

Top View

Drain
Drain
Drain
Drain

ORDERING INFORMATION

Device Package Shipping

NTMS4404NR2 SO−8 2500/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

†

 Semiconductor Components Industries, LLC, 2003

November, 2003 − Rev. 1

1 Publication Order Number:

NTMS4404N/D

NTMS4404N

()

GS

,,

DS

V

GS

V

DS

I

D

V

GS

V

DS

I

D

V

GS

d

ISD/dt

100 A/s

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Units

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V
Drain−to−Source Breakdown Voltage

V

Temperature Coefficient
Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS

T

J

DSS

GSS

/

VGS = 0 V, ID = 250 A 30 V

VGS = 0 V, VDS = 30 V

VDS = 0 V, VGS = 20 V 100 nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage
Gate Threshold Temperature Coefficient V
Drain−to−Source On Resistance R

V

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 A 1.0 2.2 3.0 V

VGS = 10 V, ID = 12 A 9.7 11.5

VGS = 4.5 V, ID = 6.0 A 15.5 17.5

Forward Transconductance g

FS

VDS = 15 V, ID = 12 A 17.5 S

CHARGES AND CAPACITANCES

Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q

C

ISS
OSS
RSS

G(TOT)

G(TH)

GS
GD

V

= 0 V, f = 1 MHz, V

GS

VGS = 10 V, VDS = 24 V, ID = 12 A

SWITCHING CHARACTERISTICS, VGS = 10 V (Note 4)

Turn−On Delay Time
Rise Time tr
Turn−Off Delay Time t
Fall Time t

t

d(ON)

d(OFF)

f

V

= 10 V, VD = 24 V, ID = 12 A,

= 10 V,

RG = 2.5 

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)

Turn−On Delay Time
Rise Time tr
Turn−Off Delay Time t
Fall Time t

t

d(ON)

d(OFF)

f

V

= 4.5 V, VD = 24 V, ID = 6.0 A,

= 4.5 V,

RG = 2.5 

DRAIN−SOURCE DIODE CHARACTERISTICS (Note 4)

Forward Diode Voltage

Reverse Recovery Time t
Charge Time t
Discharge Time tb
Reverse Recovery Charge Q

V

SD

RR

a

RR

VGS = 0 V, IS = 6.0 A

VGS = 0 V, d

0 V,

ISD/dt

I

= 6.0 A

S

NOTES:

3. Pulse Test: pulse width  300 s, duty cycle  2%.

4. Switching characteristics are independent of operating junction temperatures.

TJ = 25°C 1.0

TJ = 100°C 5.0

= 24 V

DS

= 24 V,

= 24 V,

= 12 A,

= 6.0 A,

TJ = 25°C 0.80 1.1

TJ = 125°C 0.65

= 100 A/s,

,

25 mV/°C

A

−5.0 mV/°C
m

1975 2500

pF
575 750
180 300

50 70

nC

2.4

7.5
16

15 25

ns
25 50
35 55
15 30

20

ns
80
25
15

V

40 55

ns
23
17

0.05 C

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