ON Semiconductor NTMS4176P User Manual

NTMS4176P

Power MOSFET

-30 V, -9.6 A, P-Channel, SOIC-8

Features

•Low R

•Low Capacitance to Minimize Driver Losses

•Optimized Gate Charge to Minimize Switching Losses

•SOIC-8 Surface Mount Package Saves Board Space

•This is a Pb-Free Device

Applications

•Load Switches

•Notebook PC's

•Desktop PC's

MAXIMUM RATINGS (T

Drain-to-Source Voltage V

Gate-to-Source Voltage V

Continuous Drain Current R

Power Dissipation

(Note 1)

R

q

JA

Continuous Drain Current R

Power Dissipation

(Note 2)

R

q

JA

Continuous Drain Current R (Note 1)

Power Dissipation

t < 10 s (Note 1)

R

q

JA

Pulsed Drain Current T

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I

Single Pulse Drain-to-Source Avalanche Energy T

= 15 Apk, L = 1.0 mH, RG = 25 W

I

L

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface-mounted on FR4 board using 1 inch sq pad size, 1 oz Cu.

2. Surface-mounted on FR4 board using the minimum recommended pad size.

) to Minimize Conduction Losses

DS(on

= 25°C unless otherwise stated)

J

Rating Symbol Value Unit

T

= 25°C

(Note 1)

q

JA

(Note 2)

q

JA

Steady

State

t < 10 s

q

JA

= 25°C, VDD = 30 V, VGS = 10 V,

J

A

T

= 70°C -5.8

A

T

= 25°C P

A

T

= 25°C

A

T

= 70°C -4.4

A

T

= 25°C P

A

T

= 25°C

A

T

= 70°C -7.7

A

T

= 25°C P

A

= 25°C,

A

= 10 ms

t

p

STG

-30 V

±25 V

-7.3

1.44 W

-5.5

0.81 W

-9.6

2.5 W

-39 A

-55 to +150

-2.1 A

A

°C

DSS

I

DM

GS

D

S

EAS 112.5 mJ

T

L

260 °C

http://onsemi.com

R

V

(BR)DSS

-30 V

18 mW @ -10 V

DS(on)

Max

I

Max

D

-9.6 A

30 mW @ -4.5 V

P-Channel

D

G

S

MARKING DIAGRAM

& PIN ASSIGNMENT

DDDD

8

1

SOIC-8

CASE 751

STYLE 12

4176P

AYWW

G

1

SSSG

4176P = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package

ORDERING INFORMATION

Device Package Shipping

NTMS4176PR2G SOIC-8

2500/Tape & Reel

(Pb-Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

†

© Semiconductor Components Industries, LLC, 2008

March, 2008 - Rev. 0

1 Publication Order Number:

NTMS4176P/D

NTMS4176P

THERMAL RESISTANCE RATINGS

Rating Symbol Max Unit

Junction-to-Ambient – Steady State (Note 3)

Junction-to-Ambient – t≤10 s (Note 3)

Junction-to-FOOT (Drain)

Junction-to-Ambient – Steady State (Note 4)

3. Surface-mounted on FR4 board using 1 inch sq pad size, 1 oz Cu.

4. Surface-mounted on FR4 board using the minimum recommended pad size.

R

q

JA

R

q

JA

R

q

JF

R

q

JA

87

50

22

154

°C/W

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)jk

J

Characteristic Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

Drain-to-Source Breakdown Voltage Tem‐ perature Coefficient

Zero Gate Voltage Drain Current I

Gate-to-Source Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

V

GS

DS

V

= 0 V, I

GS

= 0 V,

= -24 V

= 0 V, V

DS

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Negative Threshold Temperature Coeffi‐ cient

Drain-to-Source On Resistance R

Forward Transconductance g

V

GS(TH)

V

GS(TH)/TJ

DS(on)

FS

V

= VDS, I

GS

V

= -10 V I

GS

V

= -4.5 V I

GS

V

= -1.5 V, I

DS

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate-to-Source Charge Q

Gate-to-Drain Charge Q

Total Gate Charge Q

Gate Resistance R

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

G(TOT)

G

V

= 0 V, f = 1.0 MHz,

GS

V

= -24 V

DS

VGS = -4.5 V, VDS = -15 V,

I

= -9.6 A

D

V

= -10 V, VDS = -15 V,

GS

I

= -9.6 A,

D

SWITCHING CHARACTERISTICS (Note 6)

Turn-On Delay Time

Rise Time t

Turn-Off Delay Time t

Fall Time t

t

d(ON)

r

d(OFF)

f

V

= -10 V, V

GS

= -1.0 A, R

I

D

DRAIN-TO-SOURCE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time T

Discharge Time T

Reverse Recovery Time Q

V

SD

RR

a

b

RR

VGS = 0 V

I

= -2.1 A

D

VGS = 0 V, dIS/dt = 100 A/ms,

I

= -2.1 A

S

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

= -250 mA

D

-30 V

29

TJ = 25°C

TJ = 85°C

= ±25 V ±100 nA

GS

= -250 mA

D

-1.5 -2.5 V

-1.0

-5.0

6.0

= -9.6 A

D

= -7.5 A

D

= -9.6 A 21.5 S

D

14 18

23 30

1720

370

256

17

2.0

6.0

8.4

32.6

3.0 4.5

15

= -15 V,

DD

= 6.0 W

G

9.0

19.5

42.5

TJ = 25°C

TJ = 125°C

-0.75 -1.0

0.59

32.4

14

18.4

23

mV/°C

mA

mV/°C

mW

pF

nC

W

ns

V

ns

nC

http://onsemi.com

2

NTMS4176P

TYPICAL PERFORMANCE CURVES

20

18

16

14

12

10

-4.2 V

-4 V

-3.8 V

-10V

-5 V

-4.5 V

8

6

DRAIN CURRENT (AMPS)

4

D,

-I 2

0

0 0.5 1.0 1.5 2.0 2.5 3.0

-V

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

DS

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

0.13

0.11

0.09

0.07

TJ = 25°C

-3.6 V

-3.4 V

-3.2 V

-3.0 V

-2.8 V

3.5 4.0 4.5 5.0

TJ = 25°C I

= -9.6 A

D

20

VDS ≥ 10 V

18

16

14

12

10

8

6

DRAIN CURRENT (AMPS)

4

D,

-I 2

0

1.5 2.5 3.5 4.5

TJ = 125°C

TJ = 25°C

TJ = -55°C

-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

0.030 TJ = 25°C

0.025

VGS = -4.5 V

0.020

0.05

0.03

DRAIN-TO-SOURCE RESISTANCE (W)

0.01 246 810

DS(on),

R

-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 3. On-Resistance vs. Gate-to-Source

Voltage

1.6 ID = -9.6 A V

= -10 V

GS

1.4

1.2

1.0

DRAIN-TO-SOURCE

0.8

DS(on),

R

RESISTANCE (NORMALIZED)

0.6

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

0.015

DRAIN-TO-SOURCE RESISTANCE (W)

0.010 2101218

DS(on),

R

-I

VGS = -10 V

DRAIN CURRENT (AMPS)

D,

14 16468

Figure 4. On-Resistance vs. Drain Current and

Gate Voltage

10000

VGS = 0 V

TJ = 150°C

1000

, LEAKAGE (nA)

DSS

-I

100

51015202530

-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

TJ = 125°C

Figure 5. On-Resistance Variation with

Temperature

http://onsemi.com

Figure 6. Drain-to-Source Leakage Current

vs. Voltage

3