ON Semiconductor NTMS4107N Technical data

Steady

D

Power Dissi ation

Steady

PD1.67

W

T

A

25 C

D

y

Power Dissi ation

T

C

PD0.93

W

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NTMS4107N

Power MOSFET

30 V, 18 A, Single N−Channel, SO−8

Features

• Ultra Low R

• Optimized for Low Side Synchronous Applications

• High Speed Switching Capability

(at 4.5 VGS), Low Gate Resistance and Low Q

DS(on)

G

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Applications

• Notebook Computer Vcore Applications

• Network Applications

• DC−DC Converters

MAXIMUM RATINGS (T

Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain

Current (Note 1)

Power Dissipation Steady P
(Note 1)

Continuous Drain
Current (Note 2)

Power Dissipation
(Note 2)

Pulsed Drain Current tp = 10 s I
Operating Junction and Storage Temperature TJ, T

Continuous Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche

Energy (VDD = 30 V, VGS = 10 V, IPK = 42 A,
L = 1 mH, R

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

= 25 )

G

THERMAL RESISTANCE RATINGS

Junction−to−Ambient − Steady State (Note 1) R
Junction−to−Ambient − t  10 s (Note 1) R
Junction−to−Ambient − Steady State (Note 2) R

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. Surface−mounted on FR4 board using 1″ sq. pad size
(Cu area = 1.127″ sq. [1 oz] including traces).

2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412″ sq.).

= 25°C unless otherwise noted)

J

Rating Symbol Value Unit

stg

30 V

20 V

15
11

1.67 W

2.5
11

8.0

0.93 W

56 A

−55 to
150

3.0 A

880 mJ

260 °C

75
50

135

A

A

°C

°C/W

DSS

GS

Steady

State

t 10 s TA = 25°C 18

State

t 10 s

Steady

State

Rating Symbol Max Unit

TA = 25°C
TA = 85°C

T

= 25°C

=

TA = 25°C
TA = 85°C

= 25°

A

I

D

D

I

D

P

°

D

DM

S

E

AS

T

L



JA



JA



JA

(BR)DSS

30 V

3.4 m @ 10 V

4.7 m @ 4.5 V

G

R

DS(on)

TYP

D

S

ID MAXV

18 A

MARKING DIAGRAM/

PIN ASSIGNMENT

18

8

1

SO−8
CASE 751
STYLE 12

4107N = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week

Source
Source
Source

Gate

4107N

ALYW

(Top View)

Drain
Drain
Drain
Drain

ORDERING INFORMATION

Device Package Shipping†

NTMS4107NR2 SO−8 2500/Tape & Reel
†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

 Semiconductor Components Industries, LLC, 2005

March, 2005 − Rev. 1

1 Publication Order Number:

NTMS4107N/D

NTMS4107N

()

GS

,,

DS

V

GS

V

DS

V

GS

dIS/d

t

100 A/s

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V
Drain−to−Source Breakdown Voltage

Temperature Coefficient

V

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V, ID = 250 A 30 V

VGS = 0 V, VDS = 24 V

VDS = 0 V, VGS = 20 V 100 nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage
Negative Threshold Temperature Coefficient V
Drain−to−Source On Resistance R

V

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 A 1.0 2.5 V

VGS = 4.5 V, ID = 14 A 4.7 5.5

VGS = 10 V, ID = 15 A 3.4 4.5

Forward Transconductance g

FS

VDS = 15 V, ID = 18 A 25 S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Gate Resistance R

C

ISS
OSS
RSS

G(TOT)

G(TH)

GS

GD

G

V

= 0 V, f = 1.0 MHz, V

GS

VGS = 4.5 V, VDS = 15 V, ID = 18 A

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t
Fall Time t

t

d(ON)

r

d(OFF)

f

V

= 10 V, VD = 15 V,

= 10 V,

ID = 1.0 A, RG = 6.0 

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q

V

SD

RR

a
b

RR

VGS = 0 V, IS = 3.0 A

V

= 0 V, dI/d

= 0 V,

IS = 3.0 A

3. Pulse Test: Pulse Width  300 s, Duty Cycle  2%.

4. Switching characteristics are independent of operating junction temperatures.

21 mV/°C

TJ = 25°C 1.0

TJ = 125°C 10

7.4 mV/°C

6000

DS

= 15 V

1030

550

45

6.5

16.3

19.3

0.60 

9.0

= 15 V,

10
94
38

TJ = 25°C 0.8 1.1

TJ = 125°C 0.6

41

= 100 A/s,

=

,

20
21
48 nC

A

m

pF

nC

ns

V

ns

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