Page 1
MOSFET - Power, Single
N-Channel
80 V, 8.8 mW, 59 A
NTMFS6H848NL
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
• Low Q
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 3)
Power Dissipation
(Note 1)
R
q
JC
Continuous Drain
Current R
(Notes 1, 2, 3)
Power Dissipation
(Notes 1, 2)
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature
Range
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
= 25°C unless otherwise noted)
J
Parameter
q
JC
q
JA
L(pk)
= 3.4 A)
Steady
State
Steady
State
TA = 25°C, t
Parameter Symbol Value Unit
TC = 25°C
TC = 100°C 42
TC = 25°C
TC = 100°C 37
TA = 25°C
TA = 100°C 9.0
TA = 25°C
TA = 100°C 1.8
= 10 ms
p
Symbol Value Unit
DSS
GS
I
D
P
D
I
D
P
D
I
DM
TJ, T
stg
S
E
AS
T
L
R
q
JC
R
q
JA
2
, 2 oz. Cu pad.
80 V
±20 V
59
73
13
3.7
319 A
−55 to
+ 175
61 A
267 mJ
260 °C
2.0
41
A
W
A
W
°C
°C/W
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V
(BR)DSS
80 V
G (4)
R
MAX ID MAX
DS(ON)
8.8 mW @ 10 V
11 m W @ 4.5 V
D (5,6)
S (1,2,3)
N−CHANNEL MOSFET
59 A
MARKING
DIAGRAM
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
XXXXXX = 6H848L
XXXXXX = (NTMFS6H848NL)
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
S
S
S
G
D
D
XXXXXX
AYWZZ
D
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2019
December, 2019 − Rev. 0
1 Publication Order Number:
NTMFS6H848NL/D
Page 2
NTMFS6H848NL
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Ty p Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
VGS = 0 V,
V
= 80 V
DS
TJ = 25°C 10
TJ = 125°C 100
VDS = 0 V, VGS = 20 V 100 nA
80 V
45.7
mV/°C
mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient V
V
GS(TH)/TJ
Drain−to−Source On Resistance R
Forward Transconductance g
GS(TH)
DS(on)
FS
VGS = VDS, ID = 70 mA
VGS = 10 V ID = 10 A 7.2 8.8
VGS = 4.5 V ID = 10 A 8.8 11
VDS =8 V, ID = 10 A 84 S
1.2 2.0 V
−5.2 mV/°C
mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V
Total Gate Charge Q
C
ISS
OSS
RSS
G(TOT)
G(TH)
GS
GD
GP
G(TOT)
VGS = 0 V, f = 1 MHz, VDS = 40 V
VGS = 10 V, VDS = 40 V; ID = 30 A 25
VGS = 4.5 V, VDS = 40 V; ID = 30 A
1420
192
11
2.4
4.6
4.3
3.1 V
12 nC
pF
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(ON)
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
r
f
VGS = 4.5 V, VDS = 64 V,
= 30 A, RG = 2.5 W
I
D
37
87
22
ns
8
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= 10 A
S
VGS = 0 V, dIS/dt = 100 A/ms,
I
= 30 A
S
TJ = 25°C 0.81 1.2
TJ = 125°C 0.65
39
23
16
36 nC
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
Page 3
NTMFS6H848NL
TYPICAL CHARACTERISTICS
60
50
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
0123 5
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
3.2 V to 10 V
4
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
20
18
16
14
12
10
8
6
4
2
, DRAIN−TO−SOURCE RESISTANCE (mW)
0
3
DS(on)
R
45678910
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
VGS = 2.4 V
TJ = 25°C
= 10 A
I
D
11 12
3.0 V
2.8 V
2.6 V
60
40
20
, DRAIN CURRENT (A)
D
I
6
0
0 0.5
11
10
9
8
7
6
, DRAIN−TO−SOURCE RESISTANCE (mW)
5
12 5
DS(on)
R
Figure 4. On−Resistance vs. Drain Current and
VDS = 5 V
TJ = 25°C
TJ = 25°C
TJ = 125°C
1.0
36
, DRAIN CURRENT (A)
I
D
2.0 3.0 4.0
1.5 2.5 3.5
VGS = 4.5 V
VGS = 10 V
410
TJ = −55°C
789
Gate Voltage
2.5
VGS = 10 V
2.0
1.5
, NORMALIZED DRAIN−TO−
1.0
SOURCE RESISTANCE
DS(on)
R
0.5
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
1M
100K
10K
1K
100
, LEAKAGE (nA)
10
DSS
I
1
0.1
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3
TJ = 175°C
TJ = 150°C
TJ = 125°C
TJ = 85°C
TJ = 25°C
15 7525 55
5
4535
65
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
Page 4
NTMFS6H848NL
TYPICAL CHARACTERISTICS
10K
10
9
8
7
1K
C
ISS
6
5
100
C, CAPACITANCE (pF)
VGS = 0 V
= 25°C
T
J
f = 1 MHz
10
010 3040
C
OSS
C
RSS
60 80
5020
70 20
4
3
2
, GATE−TO−SOURCE VOLTAGE (V)
1
GS
0
V
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge
1K
t
r
100
t
d(on)
t
d(off)
t, TIME (ns)
10
t
f
1
1 10 100 0.60.5
VGS = 4.5 V
= 64 V
V
DS
I
= 30 A
D
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
10
, SOURCE CURRENT (A)
S
I
1
0.3
Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
1K
100
VDS = 40 V
= 30 A
I
D
Q
Q
GS
GD
525
10
15
VGS = 0 V
TJ = 125°C TJ = 25°C TJ = −55°C
0.4
V
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.7 0.9
1.00.8
100
10
TC = 25°C
V
GS
, DRAIN CURRENT (A)
1
D
I
Single Pulse
0.1
1 10 1000.1
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
≤ 10 V
R
Limit
DS(on)
Thermal Limit
Package Limit
Safe Operating Area
10 ms
0.5 ms
1 ms
10 ms
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1K
TJ (initial) = 25°C
10
, (A)
PEAK
I
TJ (initial) = 100°C
1
0.1
0.00001 0.001 0.010.0001
Figure 12. Maximum Drain Current vs. Time in
Avalanche
4
Page 5
100
†
(t) (°C/W)
JA
q
R
0.1
10
1
NTMFS6H848NL
TYPICAL CHARACTERISTICS
50% Duty Cycle
20%
10%
5%
2%
1%
0.01
Single Pulse
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100
t, PULSE TIME (sec)
1000
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device Marking Package Shipping
NTMFS6H848NLT1G 6H848L DFN5
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
1500 / Tape & Reel
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5
Page 6
DFN5 5x6, 1.27P
8
s
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
1
SCALE 2:1
2 X
0.20 C
0.10 C
0.10 C
C
0.05
c
PIN 5
(EXPOSED PAD)
D
2
D1
1234
TOP VIEW
SIDE VIEW
8X
b
A0.10 B
L
14
E2
G
D2
BOTTOM VIEW
A
B
E1
E
2
A
DETAIL A
e/2
e
K
M
L1
0.475
2 X
SOLDERING FOOTPRINT*
2X
2X
(SO−8FL)
CASE 488AA
ISSUE N
0.20 C
c
DETAIL A
RECOMMENDED
4.5600.495
2X
1.530
4 X
q
A1
SEATING
3.200
C
PLANE
DATE 25 JUN 201
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
DIM MIN NOM
MILLIMETERS
A 0.90 1.00
A1 0.00 −−−
b 0.33 0.41
c 0.23 0.28
D 5.15
5.00 5.30
D1 4.70 4.90
D2 3.80 4.00
E 6.15
6.00 6.30
E1 5.70 5.90
E2 3.45 3.65
e 1.27 BSC
G 0.51 0.575
K 1.20 1.35
L 0.51 0.575
L1 0.125 REF
M 3.00 3.40
q 0 −−−
_
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
3.80
12
_
GENERIC
MARKING DIAGRAM*
1
XXXXXX
AYWZZ
XXXXXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some product
may not follow the Generic Marking.
4.530
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
2X
0.905
0.965
1.000
4X
4X
0.750
1
DIMENSIONS: MILLIMETERS
1.330
1.270
PITCH
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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