ON Semiconductor NTMFS6H848NL User Manual
MOSFET - Power, Single
N-Channel
80 V, 8.8 mW, 59 A
NTMFS6H848NL
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
• Low Q
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 3)
Power Dissipation
(Note 1)
R
q
JC
Continuous Drain
Current R
(Notes 1, 2, 3)
Power Dissipation
(Notes 1, 2)
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature
Range
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
= 25°C unless otherwise noted)
J
Parameter
q
JC
q
JA
L(pk)
= 3.4 A)
Steady
State
Steady
State
TA = 25°C, t
Parameter Symbol Value Unit
TC = 25°C
TC = 100°C 42
TC = 25°C
TC = 100°C 37
TA = 25°C
TA = 100°C 9.0
TA = 25°C
TA = 100°C 1.8
= 10 ms
p
Symbol Value Unit
DSS
GS
I
D
P
D
I
D
P
D
I
DM
TJ, T
stg
S
E
AS
T
L
R
q
JC
R
q
JA
2
, 2 oz. Cu pad.
80 V
±20 V
59
73
13
3.7
319 A
−55 to
+ 175
61 A
267 mJ
260 °C
2.0
41
A
W
A
W
°C
°C/W
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V
(BR)DSS
80 V
G (4)
R
MAX ID MAX
DS(ON)
8.8 mW @ 10 V
11 m W @ 4.5 V
D (5,6)
S (1,2,3)
N−CHANNEL MOSFET
59 A
MARKING
DIAGRAM
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
XXXXXX = 6H848L
XXXXXX = (NTMFS6H848NL)
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
S
S
S
G
D
D
XXXXXX
AYWZZ
D
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2019
December, 2019 − Rev. 0
1 Publication Order Number:
NTMFS6H848NL/D
NTMFS6H848NL
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Ty p Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
VGS = 0 V,
V
= 80 V
DS
TJ = 25°C 10
TJ = 125°C 100
VDS = 0 V, VGS = 20 V 100 nA
80 V
45.7
mV/°C
mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient V
V
GS(TH)/TJ
Drain−to−Source On Resistance R
Forward Transconductance g
GS(TH)
DS(on)
FS
VGS = VDS, ID = 70 mA
VGS = 10 V ID = 10 A 7.2 8.8
VGS = 4.5 V ID = 10 A 8.8 11
VDS =8 V, ID = 10 A 84 S
1.2 2.0 V
−5.2 mV/°C
mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V
Total Gate Charge Q
C
ISS
OSS
RSS
G(TOT)
G(TH)
GS
GD
GP
G(TOT)
VGS = 0 V, f = 1 MHz, VDS = 40 V
VGS = 10 V, VDS = 40 V; ID = 30 A 25
VGS = 4.5 V, VDS = 40 V; ID = 30 A
1420
192
11
2.4
4.6
4.3
3.1 V
12 nC
pF
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(ON)
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
r
f
VGS = 4.5 V, VDS = 64 V,
= 30 A, RG = 2.5 W
I
D
37
87
22
ns
8
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= 10 A
S
VGS = 0 V, dIS/dt = 100 A/ms,
I
= 30 A
S
TJ = 25°C 0.81 1.2
TJ = 125°C 0.65
39
23
16
36 nC
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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NTMFS6H848NL
TYPICAL CHARACTERISTICS
60
50
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
0123 5
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
3.2 V to 10 V
4
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
20
18
16
14
12
10
8
6
4
2
, DRAIN−TO−SOURCE RESISTANCE (mW)
0
3
DS(on)
R
45678910
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
VGS = 2.4 V
TJ = 25°C
= 10 A
I
D
11 12
3.0 V
2.8 V
2.6 V
60
40
20
, DRAIN CURRENT (A)
D
I
6
0
0 0.5
11
10
9
8
7
6
, DRAIN−TO−SOURCE RESISTANCE (mW)
5
12 5
DS(on)
R
Figure 4. On−Resistance vs. Drain Current and
VDS = 5 V
TJ = 25°C
TJ = 25°C
TJ = 125°C
1.0
36
, DRAIN CURRENT (A)
I
D
2.0 3.0 4.0
1.5 2.5 3.5
VGS = 4.5 V
VGS = 10 V
410
TJ = −55°C
789
Gate Voltage
2.5
VGS = 10 V
2.0
1.5
, NORMALIZED DRAIN−TO−
1.0
SOURCE RESISTANCE
DS(on)
R
0.5
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
1M
100K
10K
1K
100
, LEAKAGE (nA)
10
DSS
I
1
0.1
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TJ = 175°C
TJ = 150°C
TJ = 125°C
TJ = 85°C
TJ = 25°C
15 7525 55
5
4535
65
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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