ON Semiconductor NTMFS6H824N User Manual
MOSFET - Power, Single
N-Channel
80 V, 4.5 mW, 107 A
NTMFS6H824N
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
• Low Q
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 3)
Power Dissipation
(Note 1)
R
q
JC
Continuous Drain
Current R
(Notes 1, 2, 3)
Power Dissipation
(Notes 1, 2)
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature
Range
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
= 25°C unless otherwise noted)
J
Parameter
q
JC
q
JA
L(pk)
= 7 A)
Steady
State
Steady
State
TA = 25°C, t
Parameter Symbol Value Unit
TC = 25°C
TC = 100°C 82
TC = 25°C
TC = 100°C 58
TA = 25°C
TA = 100°C 14
TA = 25°C
TA = 100°C 1.9
= 10 ms
p
Symbol Value Unit
DSS
GS
I
D
P
D
I
D
P
D
I
DM
TJ, T
stg
S
E
AS
T
L
R
q
JC
R
q
JA
2
, 2 oz. Cu pad.
80 V
±20 V
103
115
19
3.8
680 A
−55 to
+175
96 A
736 mJ
260 °C
1.3
39.8
A
W
A
W
°C
°C/W
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V
(BR)DSS
80 V
G (4)
R
MAX ID MAX
DS(ON)
4.5 mW @ 10 V
D (5,6)
S (1,2,3)
N−CHANNEL MOSFET
107 A
MARKING
DIAGRAM
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
S
S
S
G
D
D
6H824N
AYWZZ
D
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2018
June, 2020 − Rev. 2
1 Publication Order Number:
NTMFS6H824N/D
NTMFS6H824N
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Ty p Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
VGS = 0 V,
V
= 80 V
DS
TJ = 25°C 10
TJ = 125°C 100
VDS = 0 V, VGS = 20 V 100 nA
80 V
43
mV/°C
mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient V
V
GS(TH)/TJ
Drain−to−Source On Resistance R
Forward Transconductance g
GS(TH)
DS(on)
FS
VGS = VDS, ID = 140 mA
VGS = 10 V ID = 20 A 3.7 4.5
VGS = 6 V ID = 20 A 5.2 7.0
VDS =15 V, ID = 20 A 75 S
2.0 4.0 V
−7.2 mV/°C
mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V
C
ISS
OSS
RSS
G(TOT)
G(TH)
GS
GD
GP
VGS = 0 V, f = 1 MHz, VDS = 40 V
VGS = 10 V, VDS = 40 V; ID = 30 A 38
VGS = 10 V, VDS = 40 V; ID = 30 A
2470
342
11
7.4
12
7.0
4.7 V
pF
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(ON)
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
r
f
VGS = 10 V, VDS = 64 V,
= 30 A, RG = 2.5 W
I
D
20
52
55
42
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
VGS = 0 V,
IS = 20 A
RR
a
b
RR
VGS = 0 V, dIS/dt = 100 A/ms,
I
= 30 A
S
TJ = 25°C 0.8 1.2
TJ = 125°C 0.7
52
32
19
67 nC
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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NTMFS6H824N
TYPICAL CHARACTERISTICS
400
350
300
250
200
150
, DRAIN CURRENT (A)
100
D
I
50
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
8
7
6
5
VGS = 10 V
400
350
6 V
5 V
4 V
56
47
TJ = 25°C
= 20 A
I
D
83210
300
250
200
150
, DRAIN CURRENT (A)
100
D
I
50
0
6
5
4
TJ = 125°C
TJ = 25°C
TJ = 25°C
TJ = −55°C
56
VGS = 6 V
VGS = 10 V
789
1043210
, DRAIN−TO−SOURCE RESISTANCE (mW)
DS(on)
R
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
DS(on)
R
4
3
2
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.5
VGS = 10 V
= 20 A
I
D
2.0
1.5
1.0
0.5
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
50 175
Figure 5. On−Resistance Variation with
Temperature
3
, DRAIN−TO−SOURCE RESISTANCE (mW)
1098765
DS(on)
R
2
12 18
16 20141086
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1M
100K
10K
1K
, LEAKAGE (nA)
DSS
I
100
15012510075250−25−50
10
15 35
TJ = 175°C
TJ = 150°C
TJ = 125°C
TJ = 85°C
TJ = 25°C
75655545255
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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