ON Semiconductor NTMFS6H801N User Manual

NTMFS6H801N

MOSFET – Power, Single,

N-Channel

80 V, 2.8 mW, 157 A

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

• Low Q

to Minimize Conduction Losses

DS(on)

and Capacitance to Minimize Driver Losses

G

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain
Current R
(Notes 1, 3)

Power Dissipation
R

q

JC

Continuous Drain
Current R
(Notes 1, 2, 3)

Power Dissipation
R

q

JA

Pulsed Drain Current

Operating Junction and Storage Temperature
Range

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche
Energy (I

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

q

JC

(Note 1)

q

JA

(Notes 1, 2)

= 12.2 A)

L(pk)

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm

3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.

= 25°C unless otherwise noted)

J

Symbol Value Unit

TC = 25°C

Steady

State

Steady

State

TA = 25°C, t

TC = 100°C 111

TC = 25°C

TC = 100°C 83

TA = 25°C

TA = 100°C 16

TA = 25°C

TA = 100°C 1.9

= 10 ms

p

P

P

I

TJ, T

E

R

q

R

q

2

, 2 oz. Cu pad.

DSS

GS

I

D

D

I

D

D

DM

S

AS

T

L

JC

JA

stg

80 V

±20 V

157

166

23

3.8

900 A

−55 to
+175

138 A

960 mJ

260 °C

0.9

39

A

W

A

W

°C

°C/W

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V

(BR)DSS

80 V

G (4)

R

MAX ID MAX

DS(ON)

2.8 mW @ 10 V

D (5)

S (1,2,3)

N−CHANNEL MOSFET

157 A

MARKING
DIAGRAM

1

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability

S
S
S

G

D

D

6H801N

AYWZZ

D

D

ORDERING INFORMATION

See detailed ordering, marking and shipping information on
page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2016

June, 2019 − Rev. 2

1 Publication Order Number:

NTMFS6H801N/D

NTMFS6H801N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Ty p Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage

V

V

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS

T

J

DSS

GSS

VGS = 0 V, ID = 250 mA

/

VGS = 0 V,

V

= 80 V

DS

TJ = 25 °C 10

TJ = 125°C 100

VDS = 0 V, VGS = 20 V 100 nA

80 V

38

mV/°C

mA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Threshold Temperature Coefficient V

V

GS(TH)/TJ

Drain−to−Source On Resistance R

Forward Transconductance g

GS(TH)

DS(on)

FS

VGS = VDS, ID = 250 mA

VGS = 10 V ID = 50 A 2.3 2.8

VGS = 6 V ID = 50 A 3.3 4.4

VDS =15 V, ID = 50 A 128 S

2.0 4.0 V

7.2 mV/°C

mW

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Output Charge Q

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Plateau Voltage V

C

ISS

OSS

RSS

OSS

G(TOT)

G(TH)

GS

GD

GP

VGS = 0 V, f = 1 MHz, VDS = 40 V

VGS = 10 V, VDS = 40 V; ID = 50 A

4120

586

22

87 nC

64

11

19

13

5.0 V

pF

nC

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

t

d(ON)

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

r

f

VGS = 10 V, VDS = 64 V,

= 50 A, RG = 2.5 W

I

D

25

74

70

19

ns

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

V

SD

RR

a

b

RR

VGS = 0 V,

I

= 50 A

S

VGS = 0 V, dIS/dt = 100 A/ms,

I

= 50 A

S

TJ = 25°C 0.8 1.2

TJ = 125°C 0.7

64

36

28

98 nC

V

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

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NTMFS6H801N

TYPICAL CHARACTERISTICS

300

250

200

150

100

, DRAIN CURRENT (A)

D

I

50

0

0.0 1.0 2.0 3.0 4.0 5.0

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

VGS = 6.0 V to 10 V

VGS = 5.5 V

5.0 V

4.5 V

4.0 V

6.0 7.0 8.0

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

13

12

11

10

9

8

7

6

5

4

3

2

, DRAIN−TO−SOURCE RESISTANCE (mW)

1

5678910

DS(on)

R

VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

TJ = 25°C

= 50 A

I

D

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

2.4
VGS = 10 V

2.2

= 50 A

I

D

2.0

1.8

1.6

1.4

1.2

1.0

, NORMALIZED DRAIN−TO−

SOURCE RESISTANCE

0.8

0.6

DS(on)

R

0.4

−50 −25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Temperature

300

VDS = 10 V

250

200

150

100

, DRAIN CURRENT (A)

D

I

50

0

234567

6.0
TJ = 25°C

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

, DRAIN−TO−SOURCE RESISTANCE (mW)

1.0

5 101520253035404550

DS(on)

R

TJ = 25°C

TJ = 125°C

TJ = −55°C

VGS = 6.0 V

VGS = 10 V

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

1.E+06

1.E+05

1.E+04

1.E+03

, LEAKAGE (nA)

1.E+02

DSS

I

1.E+01

1.E+00
5 15253545556575

TJ = 150°C

TJ = 175°C

TJ = 125°C

TJ = 85°C

TJ = 25°C

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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