Page 1
MOSFET – Power, Single,
N-Channel
80 V, 2.1 mW, 203 A
NTMFS6H800N
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
• Low Q
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 3)
Power Dissipation
R
q
JC
Continuous Drain
Current R
(Notes 1, 2, 3)
Power Dissipation
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature TJ, T
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
q
JC
(Note 1)
q
JA
(Notes 1 & 2)
= 16.1 A)
L(pk)
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
= 25°C unless otherwise noted)
J
Symbol Value Unit
TC = 25°C
Steady
State
Steady
State
TA = 25°C, t
TC = 100°C 143
TC = 25°C
TC = 100°C 100
TA = 25°C
TA = 100°C 20
TA = 25°C
TA = 100°C 1.9
= 10 ms
p
P
P
I
E
R
q
R
q
2
, 2 oz. Cu pad.
DSS
GS
I
D
D
I
D
D
DM
S
AS
T
L
JC
JA
stg
80 V
±20 V
203
200
28
3.8
900 A
−55 to
+ 175
166 A
1271 mJ
260 °C
0.75
°C/W
39
A
W
A
W
°C
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V
(BR)DSS
80 V
G (4)
R
MAX ID MAX
DS(ON)
2.1 mW @ 10 V
D (5)
S (1,2,3)
N−CHANNEL MOSFET
203 A
MARKING
DIAGRAM
D
DFN5 (SO−8FL)
CASE 506EZ
1
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
S
S
S
G
6H800N
AYWZZ
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
D
D
© Semiconductor Components Industries, LLC, 2017
April, 2021 − Rev. 2
1 Publication Order Number:
NTMFS6H800N/D
Page 2
NTMFS6H800N
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
VGS = 0 V,
V
= 80 V
DS
TJ = 25 °C 10
TJ = 125°C 250
VDS = 0 V, VGS = 20 V 100 nA
80 V
39
mV/°C
mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient V
V
GS(TH)/TJ
Drain−to−Source On Resistance R
Forward Transconductance g
GS(TH)
DS(on)
FS
VGS = VDS, ID = 330 mA
VGS = 10 V ID = 50 A 1.8 2.1
VGS = 6 V ID = 50 A 2.6 3.5
VDS =15 V, ID = 50 A 138 S
2.0 4.0 V
8.0 mV/°C
mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Output Charge Q
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V
C
ISS
OSS
RSS
OSS
G(TOT)
G(TH)
GS
GD
GP
VGS = 0 V, f = 1 MHz, VDS = 40 V
VGS = 10 V, VDS = 40 V; ID = 50 A
5530
760
27
116 nC
85
15
26
16
4.8 V
pF
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(ON)
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
r
f
VGS = 10 V, VDS = 64 V,
= 50 A, RG = 2.5 W
I
D
25
89
97
85
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= 50 A
S
VGS = 0 V, dIS/dt = 100 A/ms,
I
= 50 A
S
TJ = 25°C 0.8 1.2
TJ = 125°C 0.7
76
36
40
82 nC
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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Page 3
NTMFS6H800N
TYPICAL CHARACTERISTICS
350
300
250
200
150
100
, DRAIN CURRENT (A)
D
I
50
0
0123
5.5 V to 10 V
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
40
35
30
25
20
350
5.0 V
4.5 V
, DRAIN CURRENT (A)
I
VGS = 4.0 V
678
5
4
TJ = 25°C
= 50 A
I
D
VDS = 10 V
300
250
200
150
100
D
50
0
23
4.0
TJ = 25°C
3.5
3.0
2.5
TJ = 25°C
TJ = 125°C
TJ = −55°C
45 6
VGS = 6.0 V
15
10
5
, DRAIN−TO−SOURCE RESISTANCE (mW)
0
34 5 6 7 8 910
DS(on)
R
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.4
VGS = 10 V
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
DS(on)
R
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
= 50 A
I
D
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
2.0
1.5
, DRAIN−TO−SOURCE RESISTANCE (mW)
1.0
0 50 200
DS(on)
R
100 250
ID, DRAIN CURRENT (A)
150 300
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1M
100K
10K
1K
, LEAKAGE (nA)
100
DSS
I
10
1
15 75
5
25 55
TJ = 175°C
TJ = 150°C
TJ = 125°C
TJ = 85°C
TJ = 25°C
4535
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
VGS = 10 V
65
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3
Page 4
NTMFS6H800N
TYPICAL CHARACTERISTICS
10K
C
ISS
10
9
8
1K
C
OSS
7
6
5
4
100
C, CAPACITANCE (pF)
VGS = 0 V
= 25°C
T
J
f = 1 MHz
10
010 3040
C
RSS
60 80 50
5020
70 40 70
3
2
, GATE−TO−SOURCE VOLTAGE (V)
1
GS
0
V
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge
1K
t
r
t
d(off)
100
t
t, TIME (ns)
f
VGS = 10 V
= 64 V
t
d(on)
10
1 10 100 0.3 0.60.5
V
DS
I
= 50 A
D
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
1K
100
10
TJ = 125°C
1
, SOURCE CURRENT (A)
S
I
0.1
Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
1K
1000
100
, (A)
PEAK
I
10
1
0.00001 0.001 0.010.0001
1K
100
10
, DRAIN CURRENT (A)
1
D
I
0.1
1 10 1000.1
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s)
R
Limit
DS(on)
Thermal Limit
Package Limit
TC = 25°C
≤ 10 V
V
GS
Single Pulse
10 ms
0.5 ms
1 ms
10 ms
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Q
GS
Q
GD
VDS = 40 V
= 25°C
T
J
I
= 50 A
D
10 30 60 80
20
VGS = 0 V
TJ = 25°C
0.4
V
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
TJ = −55°C
0.7 0.9
TJ (initial) = 25°C
TJ (initial) = 100°C
Figure 12. I
vs. Time in Avalanche
PEAK
1.00.8
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Page 5
NTMFS6H800N
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
20%
10
10%
5%
2%
1
1%
(t) (°C/W)
JA
0.1
q
R
Single Pulse
0.01
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100
t, PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device Marking Package Shipping
NTMFS6H800NT1G 6H800N DFN5
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
1500 / Tape & Reel
1000
†
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5
Page 6
NTMFS6H800N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P (SO−8FL)
CASE 506EZ
ISSUE O
q
q
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6
Page 7
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