ON Semiconductor NTMFS6B14N User Manual
NTMFS6B14N
MOSFET – Power, Single,
N-Channel
100 V, 15 mW, 50 A
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
• Low Q
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 2, 3)
Power Dissipation
R
q
JC
Continuous Drain
Current R
(Notes 1, 2, 3)
Power Dissipation
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature TJ, T
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
q
JC
(Notes 1, 2)
q
JA
(Notes 1 & 2)
= 24 A)
L(pk)
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
= 25°C unless otherwise noted)
J
Symbol Value Unit
TC = 25°C
Steady
State
Steady
State
TA = 25°C, t
TC = 100°C 32
TC = 25°C
TC = 100°C 32
TA = 25°C
TA = 100°C 6.4
TA = 25°C
TA = 100°C 1.3
= 10 ms
p
P
P
I
E
R
q
R
q
2
, 2 oz. Cu pad.
DSS
GS
I
D
D
I
D
D
DM
S
AS
T
L
JC
JA
stg
100 V
±20 V
50
77
10
3.1
180 A
−55 to
+ 150
60 A
29 mJ
260 °C
1.6
40
A
W
A
W
°C
°C/W
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V
(BR)DSS
100 V 15 mW @ 10 V
G (4)
R
MAX ID MAX
DS(ON)
D (5)
S (1,2,3)
N−CHANNEL MOSFET
50 A
MARKING
DIAGRAM
G
S
S
S
D
D
6B14N
AYWZZ
D
D
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
May, 2019 − Rev. 1
1 Publication Order Number:
NTMFS6B14N/D
NTMFS6B14N
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
VGS = 0 V,
V
= 80 V
DS
TJ = 25 °C 10
TJ = 125°C 100
VDS = 0 V, VGS = 20 V 100 nA
100 V
80
mV/°C
mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient V
Drain−to−Source On Resistance R
V
GS(TH)
GS(TH)/TJ
DS(on)
VGS = VDS, ID = 250 mA
VGS = 10 V ID = 20 A 12.2 15
VGS = 6 V ID = 10 A 18.5 23
2.0 4.0 V
−8.5 mV/°C
mW
mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
G(TOT)
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V
Gate Resistance R
ISS
OSS
RSS
G(TH)
GS
GD
GP
G
VGS = 0 V, f = 1 MHz, VDS = 50 V
VGS = 10 V, VDS = 50 V; ID = 20 A
TJ = 25 °C 1.0
1300
260
18
20
2.2
6.4
6.5
5.4 V
pF
nC
W
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(ON)
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
r
f
VGS = 10 V, VDS = 50 V,
= 20 A, RG = 1.0 W
I
D
9.6
39
17
6.8
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
VGS = 0 V,
IS = 20 A
RR
a
b
RR
VGS = 0 V, dIS/dt = 100 A/ms,
I
= 20 A
S
TJ = 25°C 0.83 1.2
TJ = 125°C 0.8
45
23
22
50 nC
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS6B14N
TYPICAL CHARACTERISTICS
100
80
60
40
, DRAIN CURRENT (A)
D
I
20
0
0.5 1.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
52
44
36
28
20
12
, DRAIN−TO−SOURCE RESISTANCE (mW)
4
5.0 3025
DS(on)
R
5.5 8.5 9.5
Figure 3. On−Resistance vs. Gate−to−Source
VGS = 10 V
7.0 V
6.5 V
6.0 V
5.5 V
4.0 V
2.0
ID = 20 A
= 25°C
T
J
VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)
5.0 V
4.5 V
2.5
9.08.07.0 107.56.56.04.5
3.01.00
100
VDS ≤ 10 V
90
80
70
60
50
40
30
, DRAIN CURRENT (A)
D
I
20
10
0
30
TJ = 25°C
9
6
3
10
, DRAIN−TO−SOURCE RESISTANCE (mW)
DS(on)
R
27
24
21
18
15
12
TJ = 25°C
TJ = 125°C
3
TJ = −55°C
54210
VGS = 6.0 V
VGS = 10 V
2015
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
687
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
DS(on)
R
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
ID = 20 A
= 10 V
V
GS
50
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
100K
10K
1K
100
, LEAKAGE (nA)
DSS
I
10
15012510075250−25−50
1
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3
TJ = 150°C
TJ = 125°C
TJ = 25°C
605040302010
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
100908070
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