ON Semiconductor NTMFS6B05N User Manual

NTMFS6B05N

MOSFET – Power, Single,

N-Channel

100 V, 8 mW, 104 A

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

• Low Q

to Minimize Conduction Losses

DS(on)

and Capacitance to Minimize Driver Losses

G

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain
Current R
(Notes 1, 2, 3)

Power Dissipation
R

q

JC

Continuous Drain
Current R
(Notes 1, 2, 3)

Power Dissipation
R

q

JA

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche
Energy (I

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

q

JC

(Notes 1, 2)

q

JA

(Notes 1 & 2)

= 50 A)

L(pk)

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm

3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.

= 25°C unless otherwise noted)

J

Symbol Value Unit

TC = 25°C

Steady

State

Steady

State

TA = 25°C, t

TC = 100°C 66

TC = 25°C

TC = 100°C 56

TA = 25°C

TA = 100°C 10

TA = 25°C

TA = 100°C 1.3

= 10 ms

p

P

P

I

E

R

q

R

q

2

, 2 oz. Cu pad.

DSS

GS

I

D

D

I

D

D

DM

S

AS

T

L

JC

JA

stg

100 V

±20 V

104

138

16

3.3

370 A

−55 to
+ 150

130 A

125 mJ

260 °C

0.9

39

A

W

A

W

°C

°C/W

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V

(BR)DSS

100 V 8 mW @ 10 V

G (4)

R

MAX ID MAX

DS(ON)

D (5)

S (1,2,3)

N−CHANNEL MOSFET

104 A

MARKING
DIAGRAM

G

S
S
S

D

D

6B05N

AYWZZ

D

D

1

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability

ORDERING INFORMATION

See detailed ordering, marking and shipping information on
page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2015

May, 2019 − Rev. 1

1 Publication Order Number:

NTMFS6B05N/D

NTMFS6B05N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Ty p Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage

V

V

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS

T

J

DSS

GSS

VGS = 0 V, ID = 250 mA

/

VGS = 0 V,

V

= 80 V

DS

TJ = 25 °C 10

TJ = 125°C 100

VDS = 0 V, VGS = 20 V 100 nA

100 V

73

mV/°C

mA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Threshold Temperature Coefficient V

Drain−to−Source On Resistance R

V

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V ID = 20 A 6.5 8.0

VGS = 6.0 V ID = 10 A 9.6 14

2.0 4.0 V

−7.9 mV/°C

mW

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

G(TOT)

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Plateau Voltage V

Gate Resistance R

ISS

OSS

RSS

G(TH)

GS

GD

GP

G

VGS = 0 V, f = 1 MHz, VDS = 50 V

VGS = 10 V, VDS = 50 V; ID = 25 A

TJ = 25 °C 1.0

3100

570

28

44

5.0

14

12

5.0 V

pF

nC

W

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

t

d(ON)

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

r

f

VGS = 10 V, VDS = 50 V,

= 25 A, RG = 1.0 W

I

D

14

43

39

16

ns

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

V

SD

VGS = 0 V,

IS = 25 A

RR

a

b

RR

VGS = 0 V, dIS/dt = 100 A/ms,

I

= 25 A

S

TJ = 25°C 0.9 1.2

TJ = 125°C 0.8

58

30

28

83 nC

V

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

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2

NTMFS6B05N

TYPICAL CHARACTERISTICS

140

120

100

80

60

40

, DRAIN CURRENT (A)

D

I

20

VGS = 10 V

0

0.5 1.5

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

20

18

16

14

12

10

8

6

, DRAIN−TO−SOURCE RESISTANCE (mW)

4

5.0 45 5035 40

DS(on)

R

5.5 8.5 9.5

Figure 3. On−Resistance vs. Gate−to−Source

7.0 V

6.5 V

6.0 V

5.5 V

4.0 V

2.0

ID = 20 A

= 25°C

T

J

VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)

5.0 V

4.5 V

2.5

9.08.07.0 107.56.56.04.5

3.01.00

140

120

100

80

60

40

, DRAIN CURRENT (A)

D

I

20

0

15

14

13

12

11

10

9

8

7

6

5

, DRAIN−TO−SOURCE RESISTANCE (mW)

4

DS(on)

R

VDS ≤ 10 V

TJ = 25°C

10

TJ = 125°C

TJ = 25°C

3

VGS = 6.0 V

VGS = 10 V

25 302015

Figure 4. On−Resistance vs. Drain Current and

Voltage

Gate Voltage

TJ = −55°C

54210

67

, NORMALIZED DRAIN−TO−

SOURCE RESISTANCE

DS(on)

R

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

ID = 20 A

= 10 V

V

GS

50

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Temperature

100K

10K

1K

100

, LEAKAGE (nA)

DSS

I

10

15012510075250−25−50

1

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3

TJ = 150°C

TJ = 125°C

TJ = 25°C

60 70 80 90

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

1005040302010