NTMFS6B05N
MOSFET – Power, Single,
N-Channel
100 V, 8 mW, 104 A
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
• Low Q
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 2, 3)
Power Dissipation
R
q
JC
Continuous Drain
Current R
(Notes 1, 2, 3)
Power Dissipation
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature TJ, T
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
q
JC
(Notes 1, 2)
q
JA
(Notes 1 & 2)
= 50 A)
L(pk)
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
= 25°C unless otherwise noted)
J
Symbol Value Unit
TC = 25°C
Steady
State
Steady
State
TA = 25°C, t
TC = 100°C 66
TC = 25°C
TC = 100°C 56
TA = 25°C
TA = 100°C 10
TA = 25°C
TA = 100°C 1.3
= 10 ms
p
P
P
I
E
R
q
R
q
2
, 2 oz. Cu pad.
DSS
GS
I
D
D
I
D
D
DM
S
AS
T
L
JC
JA
stg
100 V
±20 V
104
138
16
3.3
370 A
−55 to
+ 150
130 A
125 mJ
260 °C
0.9
39
A
W
A
W
°C
°C/W
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V
(BR)DSS
100 V 8 mW @ 10 V
G (4)
R
MAX ID MAX
DS(ON)
D (5)
S (1,2,3)
N−CHANNEL MOSFET
104 A
MARKING
DIAGRAM
G
S
S
S
D
D
6B05N
AYWZZ
D
D
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
May, 2019 − Rev. 1
1 Publication Order Number:
NTMFS6B05N/D
NTMFS6B05N
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Ty p Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
VGS = 0 V,
V
= 80 V
DS
TJ = 25 °C 10
TJ = 125°C 100
VDS = 0 V, VGS = 20 V 100 nA
100 V
73
mV/°C
mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient V
Drain−to−Source On Resistance R
V
GS(TH)
GS(TH)/TJ
DS(on)
VGS = VDS, ID = 250 mA
VGS = 10 V ID = 20 A 6.5 8.0
VGS = 6.0 V ID = 10 A 9.6 14
2.0 4.0 V
−7.9 mV/°C
mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
G(TOT)
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V
Gate Resistance R
ISS
OSS
RSS
G(TH)
GS
GD
GP
G
VGS = 0 V, f = 1 MHz, VDS = 50 V
VGS = 10 V, VDS = 50 V; ID = 25 A
TJ = 25 °C 1.0
3100
570
28
44
5.0
14
12
5.0 V
pF
nC
W
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(ON)
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
r
f
VGS = 10 V, VDS = 50 V,
= 25 A, RG = 1.0 W
I
D
14
43
39
16
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
VGS = 0 V,
IS = 25 A
RR
a
b
RR
VGS = 0 V, dIS/dt = 100 A/ms,
I
= 25 A
S
TJ = 25°C 0.9 1.2
TJ = 125°C 0.8
58
30
28
83 nC
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS6B05N
TYPICAL CHARACTERISTICS
140
120
100
80
60
40
, DRAIN CURRENT (A)
D
I
20
VGS = 10 V
0
0.5 1.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
20
18
16
14
12
10
8
6
, DRAIN−TO−SOURCE RESISTANCE (mW)
4
5.0 45 5035 40
DS(on)
R
5.5 8.5 9.5
Figure 3. On−Resistance vs. Gate−to−Source
7.0 V
6.5 V
6.0 V
5.5 V
4.0 V
2.0
ID = 20 A
= 25°C
T
J
VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)
5.0 V
4.5 V
2.5
9.08.07.0 107.56.56.04.5
3.01.00
140
120
100
80
60
40
, DRAIN CURRENT (A)
D
I
20
0
15
14
13
12
11
10
9
8
7
6
5
, DRAIN−TO−SOURCE RESISTANCE (mW)
4
DS(on)
R
VDS ≤ 10 V
TJ = 25°C
10
TJ = 125°C
TJ = 25°C
3
VGS = 6.0 V
VGS = 10 V
25 302015
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
TJ = −55°C
54210
67
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
DS(on)
R
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
ID = 20 A
= 10 V
V
GS
50
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
100K
10K
1K
100
, LEAKAGE (nA)
DSS
I
10
15012510075250−25−50
1
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3
TJ = 150°C
TJ = 125°C
TJ = 25°C
60 70 80 90
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
1005040302010
NTMFS6B05N
TYPICAL CHARACTERISTICS
10,000
1000
100
10
C, CAPACITANCE (pF)
1
1000
100
t
t, TIME (ns)
t
10
1
C
iss
C
oss
C
rss
VGS = 0 V
= 25°C
T
J
f = 1 MHz
10
8
6
Q
gs
4
2
Q
T
Q
gd
, GATE−TO−SOURCE VOLTAGE (V)
12
GS
0
101
100
V
5
020
15 35
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
50
VDS = 50 V
= 25 A
I
D
V
= 10 V
GS
45
40
TJ = 25°C
35
t
r
d(off)
t
f
d(on)
30
25
20
15
, SOURCE CURRENT (A)
10
S
I
5
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
100101
0
Figure 10. Diode Forward Voltage vs. Current
0.5
V
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
vs. Gate Resistance
TJ = 25°C
= 50 V
V
DS
I
= 25 A
D
3010
25 40 45
0.90.80.70.60.40.3
1.0
1000
VGS ≤ 10 V
Single Pulse
T
100
= 25°C
C
10
1
, DRAIN CURRENT (A)
D
I
0.1
0.01
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
1 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
Safe Operating Area
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4
500 ms
10 ms
1001010.1
NTMFS6B05N
TYPICAL CHARACTERISTICS
80
70
60
50
40
30
20
, SMALL−SIGNAL FORWARD
FS
10
TRANSFER CONDUCTANCE (S)
G
100
10
1
0
50% Duty Cycle
20%
10%
5%
2%
1%
100
10
, DRAIN CURRENT (A)
PEAK
I
20 30 40 50 70 80 90
ID, DRAIN CURRENT (A) TAV, TIME IN AVALANCHE (sec)
Figure 12. GFS vs. I
D
10060100
1
Figure 13. I
25°C
100°C
0.0010.0001
PEAK
vs. T
0.01
AV
0.1
R(t) (°C/W)
0.01
0.001
Single Pulse
0.010.001 1010.00010.00001 0.10.000001
PULSE TIME (sec)
NTMFS6B05N, 650 mm2, 2 oz, Cu Single Layer Pad
100 1000
Figure 14. Thermal Response
DEVICE ORDERING INFORMATION
Device Marking Package Shipping
NTMFS6B05NT1G 6B05N DFN5
(Pb−Free)
NTMFS6B05NT3G 6B05N DFN5
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
1500 / Tape & Reel
5000 / Tape & Reel
†
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5
DFN5 5x6, 1.27P
8
s
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
1
SCALE 2:1
2 X
0.20 C
0.10 C
0.10 C
C
0.05
c
PIN 5
(EXPOSED PAD)
D
2
D1
1234
TOP VIEW
SIDE VIEW
8X
b
A0.10 B
L
14
E2
G
D2
BOTTOM VIEW
A
B
E1
E
2
A
DETAIL A
e/2
e
K
M
L1
0.475
2 X
SOLDERING FOOTPRINT*
2X
2X
(SO−8FL)
CASE 488AA
ISSUE N
0.20 C
c
DETAIL A
RECOMMENDED
4.5600.495
2X
1.530
4 X
q
3.200
A1
C
SEATING
PLANE
DATE 25 JUN 201
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
DIM MIN NOM
A1 0.00 −−−
D1 4.70 4.90
D2 3.80 4.00
E1 5.70 5.90
E2 3.45 3.65
L1 0.125 REF
MILLIMETERS
A 0.90 1.00
b 0.33 0.41
c 0.23 0.28
D 5.15
5.00 5.30
E 6.15
6.00 6.30
e 1.27 BSC
G 0.51 0.575
K 1.20 1.35
L 0.51 0.575
M 3.00 3.40
q 0 −−−
_
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
3.80
12
_
GENERIC
MARKING DIAGRAM*
1
XXXXXX
AYWZZ
XXXXXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some product
may not follow the Generic Marking.
4.530
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
2X
0.905
0.965
1.000
4X
4X
0.750
1
DIMENSIONS: MILLIMETERS
1.330
1.270
PITCH
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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