Page 1
NTMFS5H615NL
MOSFET – Power, Single,
N-Channel
60 V, 1.8 mW, 185 A
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
• Low Q
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 3)
Power Dissipation
(Note 1)
R
q
JC
Continuous Drain
Current R
(Notes 1, 2, 3)
Power Dissipation
(Notes 1, 2)
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature
Range
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
= 25°C unless otherwise noted)
J
Parameter
q
JC
q
JA
L(pk)
= 16 A)
Steady
State
Steady
State
TA = 25°C, t
Parameter Symbol Value Unit
TC = 25°C
TC = 100°C 117
TC = 25°C
TC = 100°C 55
TA = 25°C
TA = 100°C 18
TA = 25°C
TA = 100°C 1.3
= 10 ms
p
Symbol Value Unit
DSS
GS
I
D
P
D
I
D
P
D
I
DM
TJ, T
stg
S
E
AS
T
L
R
q
JC
R
q
JA
2
, 2 oz. Cu pad.
60 V
±20 V
185
139
28
3.2
900 A
−55 to
+150
116 A
419 mJ
260 °C
0.9
39
A
W
A
W
°C
°C/W
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V
(BR)DSS
60 V
G (4)
R
MAX ID MAX
DS(ON)
1.8 mW @ 10 V
2.5 mW @ 4.5 V
D (5)
S (1,2,3)
N−CHANNEL MOSFET
185 A
MARKING
DIAGRAM
G
S
S
S
D
D
5H615L
AYWZZ
D
D
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
5H615L = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
May, 2019 − Rev. 0
1 Publication Order Number:
NTMFS5H615NL/D
Page 2
NTMFS5H615NL
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Ty p Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
VGS = 0 V,
V
= 60 V
DS
TJ = 25 °C 10
TJ = 125°C 250
VDS = 0 V, VGS = 20 V 100 nA
60 V
37.8
mV/°C
mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient V
Drain−to−Source On Resistance R
V
GS(TH)
GS(TH)/TJ
DS(on)
VGS = VDS, ID = 250 mA
VGS = 10 V ID = 49 A 1.5 1.8
VGS = 4.5 V ID = 39 A 2.0 2.5
1.2 2.0 V
−5.2 mV/°C
mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Output Charge Q
Total Gate Charge Q
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V
C
ISS
OSS
RSS
OSS
G(TOT)
G(TOT)
G(TH)
GS
GD
GP
VGS = 0 V, f = 1 MHz, VDS = 30 V
VGS = 0 V, VDD = 30 V 79
VGS = 10 V, VDS = 30 V; ID = 49 A 63
VGS = 4.5 V, VDS = 30 V; ID = 49 A
4860
900
18
28
7.7
14.2
4.6
3 V
pF
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(ON)
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
r
f
VGS = 4.5 V, VDS = 30 V,
= 49 A, RG = 2.5 W
I
D
28
116
63
138
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= 49 A
S
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 25 A
TJ = 25°C 0.8 1.2
TJ = 125°C 0.65
61
31
30
76 nC
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
Page 3
NTMFS5H615NL
TYPICAL CHARACTERISTICS
200
10 V
150
100
50
, DRAIN CURRENT (A)
D
I
0
0
0.2
3.6 V
0.4 0.8 1.4 1.8
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
6
5
4
3
3.2 V
4.5 V
0.6 1.6
1.0
1.2
TJ = 25°C
= 49 A
I
D
3.0 V
2.8 V
200
150
100
, DRAIN CURRENT (A)
50
D
I
2.0
0
3.0
2.5
2.0
1.5
TJ = 25°C
TJ = 125°C
1
TJ = 25°C
20
TJ = −55°C
35
VGS = 4.5 V
VGS = 10 V
4
, DRAIN−TO−SOURCE RESISTANCE (mW)
DS(on)
R
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
DS(on)
R
2
1
2
3
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
5
4
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.5
VGS = 10 V
= 49 A
I
D
2.0
1.5
1.0
0.5
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
25
0 75 125
Figure 5. On−Resistance Variation with
Temperature
1.0
, DRAIN−TO−SOURCE RESISTANCE (mW)
DS(on)
R
0.5
10
9876
80 120 180
6020
100
14040
160 200
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100K
10K
100
, LEAKAGE CURRENT (nA)
DSS
I
15010050−25−50
1K
10
1
TJ = 150°C
TJ = 125°C
TJ = 85°C
15
25 55455
35
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
Page 4
NTMFS5H615NL
TYPICAL CHARACTERISTICS
10K
1K
100
10
C, CAPACITANCE (pF)
1
0
1000
100
10
9
8
7
C
C
ISS
OSS
6
VGS = 0 V
= 25°C
T
J
f = 1 MHz
10 20 30 40 50
5
4
C
RSS
3
2
, GATE−TO−SOURCE VOLTAGE (V)
1
GS
0
60
V
Q
GS
GD
100
20 30
40
Q
VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
VGS = 4.5 V
= 30 V
V
DS
I
= 49 A
D
t
f
t
r
VGS = 0 V
10
VDS = 30 V
= 25°C
T
J
I
= 49 A
D
50
60
t
d(off)
t, SWITCHING TIME (ns)
t
d(on)
10
1 0.5 1.0
10
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
, SOURCE CURRENT (A)
S
I
1
100
Figure 10. Diode Forward Voltage vs. Current
TJ = 125°C
0.40.3
V
SD
TJ = 25°C TJ = −55°C
0.6 0.7 0.8
, SOURCE−TO−DRAIN VOLTAGE (V)
vs. Gate Resistance
1000
100
10
TC = 25°C
Single Pulse
VGS ≤ 10 V
, DRAIN CURRENT(A)
1
D
I
0.1
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
R
Limit
DS(on)
Thermal Limit
Package Limit
10 ms
0.5 ms
1 ms
10 ms
100
10001010.1
1000
T
= 25°C
J(initial)
100
(A)
PEAK
I
10
T
J(initial)
= 100°C
1
0.00001 0.01
Figure 12. I
0.0001
PEAK
vs. Time in Avalanche
0.001
Safe Operating Area
0.9
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4
Page 5
NTMFS5H615NL
TYPICAL CHARACTERISTICS
100
Duty Cycle = 0.5
0.2
10
0.1
0.05
0.02
1
0.01
R(t) (°C/W)
0.1
Single Pulse
0.01
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device Marking Package Shipping
NTMFS5H615NLT1G 5H615L DFN5
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
10010.010.00001 0.001
†
1500 / Tape & Reel
1000100.10.00010.000001
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5
Page 6
DFN5 5x6, 1.27P
8
s
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
1
SCALE 2:1
2 X
0.20 C
0.10 C
0.10 C
C
0.05
c
PIN 5
(EXPOSED PAD)
D
2
D1
1234
TOP VIEW
SIDE VIEW
8X
b
A0.10 B
L
14
E2
G
D2
BOTTOM VIEW
A
B
E1
E
2
A
DETAIL A
e/2
e
K
M
L1
0.475
2 X
SOLDERING FOOTPRINT*
2X
2X
(SO−8FL)
CASE 488AA
ISSUE N
0.20 C
c
DETAIL A
RECOMMENDED
4.5600.495
2X
1.530
4 X
q
3.200
A1
C
SEATING
PLANE
DATE 25 JUN 201
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
DIM MIN NOM
A1 0.00 −−−
D1 4.70 4.90
D2 3.80 4.00
E1 5.70 5.90
E2 3.45 3.65
L1 0.125 REF
MILLIMETERS
A 0.90 1.00
b 0.33 0.41
c 0.23 0.28
D 5.15
5.00 5.30
E 6.15
6.00 6.30
e 1.27 BSC
G 0.51 0.575
K 1.20 1.35
L 0.51 0.575
M 3.00 3.40
q 0 −−−
_
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
3.80
12
_
GENERIC
MARKING DIAGRAM*
1
XXXXXX
AYWZZ
XXXXXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some product
may not follow the Generic Marking.
4.530
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
2X
0.905
0.965
1.000
4X
4X
0.750
1
DIMENSIONS: MILLIMETERS
1.330
1.270
PITCH
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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