ON Semiconductor NTMFS5H615NL User Manual
NTMFS5H615NL
MOSFET – Power, Single,
N-Channel
60 V, 1.8 mW, 185 A
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
• Low Q
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 3)
Power Dissipation
(Note 1)
R
q
JC
Continuous Drain
Current R
(Notes 1, 2, 3)
Power Dissipation
(Notes 1, 2)
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature
Range
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
= 25°C unless otherwise noted)
J
Parameter
q
JC
q
JA
L(pk)
= 16 A)
Steady
State
Steady
State
TA = 25°C, t
Parameter Symbol Value Unit
TC = 25°C
TC = 100°C 117
TC = 25°C
TC = 100°C 55
TA = 25°C
TA = 100°C 18
TA = 25°C
TA = 100°C 1.3
= 10 ms
p
Symbol Value Unit
DSS
GS
I
D
P
D
I
D
P
D
I
DM
TJ, T
stg
S
E
AS
T
L
R
q
JC
R
q
JA
2
, 2 oz. Cu pad.
60 V
±20 V
185
139
28
3.2
900 A
−55 to
+150
116 A
419 mJ
260 °C
0.9
39
A
W
A
W
°C
°C/W
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V
(BR)DSS
60 V
G (4)
R
MAX ID MAX
DS(ON)
1.8 mW @ 10 V
2.5 mW @ 4.5 V
D (5)
S (1,2,3)
N−CHANNEL MOSFET
185 A
MARKING
DIAGRAM
G
S
S
S
D
D
5H615L
AYWZZ
D
D
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
5H615L = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
May, 2019 − Rev. 0
1 Publication Order Number:
NTMFS5H615NL/D
NTMFS5H615NL
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Ty p Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
VGS = 0 V,
V
= 60 V
DS
TJ = 25 °C 10
TJ = 125°C 250
VDS = 0 V, VGS = 20 V 100 nA
60 V
37.8
mV/°C
mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient V
Drain−to−Source On Resistance R
V
GS(TH)
GS(TH)/TJ
DS(on)
VGS = VDS, ID = 250 mA
VGS = 10 V ID = 49 A 1.5 1.8
VGS = 4.5 V ID = 39 A 2.0 2.5
1.2 2.0 V
−5.2 mV/°C
mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Output Charge Q
Total Gate Charge Q
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V
C
ISS
OSS
RSS
OSS
G(TOT)
G(TOT)
G(TH)
GS
GD
GP
VGS = 0 V, f = 1 MHz, VDS = 30 V
VGS = 0 V, VDD = 30 V 79
VGS = 10 V, VDS = 30 V; ID = 49 A 63
VGS = 4.5 V, VDS = 30 V; ID = 49 A
4860
900
18
28
7.7
14.2
4.6
3 V
pF
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(ON)
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
r
f
VGS = 4.5 V, VDS = 30 V,
= 49 A, RG = 2.5 W
I
D
28
116
63
138
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= 49 A
S
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 25 A
TJ = 25°C 0.8 1.2
TJ = 125°C 0.65
61
31
30
76 nC
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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NTMFS5H615NL
TYPICAL CHARACTERISTICS
200
10 V
150
100
50
, DRAIN CURRENT (A)
D
I
0
0
0.2
3.6 V
0.4 0.8 1.4 1.8
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
6
5
4
3
3.2 V
4.5 V
0.6 1.6
1.0
1.2
TJ = 25°C
= 49 A
I
D
3.0 V
2.8 V
200
150
100
, DRAIN CURRENT (A)
50
D
I
2.0
0
3.0
2.5
2.0
1.5
TJ = 25°C
TJ = 125°C
1
TJ = 25°C
20
TJ = −55°C
35
VGS = 4.5 V
VGS = 10 V
4
, DRAIN−TO−SOURCE RESISTANCE (mW)
DS(on)
R
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
DS(on)
R
2
1
2
3
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
5
4
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.5
VGS = 10 V
= 49 A
I
D
2.0
1.5
1.0
0.5
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
25
0 75 125
Figure 5. On−Resistance Variation with
Temperature
1.0
, DRAIN−TO−SOURCE RESISTANCE (mW)
DS(on)
R
0.5
10
9876
80 120 180
6020
100
14040
160 200
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100K
10K
100
, LEAKAGE CURRENT (nA)
DSS
I
15010050−25−50
1K
10
1
TJ = 150°C
TJ = 125°C
TJ = 85°C
15
25 55455
35
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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