ON Semiconductor NTMFS5C612N User Manual
NTMFS5C612N
MOSFET – Power, Single,
N-Channel
60 V, 1.6 mW, 230 A
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
• Low Q
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 3)
Power Dissipation
R
q
JC
Continuous Drain
Current R
(Notes 1, 2, 3)
Power Dissipation
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature TJ, T
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
q
JC
(Note 1)
q
JA
(Notes 1, 2)
= 17 A)
L(pk)
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
= 25°C unless otherwise noted)
J
Symbol Value Unit
TC = 25°C
Steady
State
Steady
State
TA = 25°C, t
TC = 100°C 160
TC = 25°C
TC = 100°C 84
TA = 25°C
TA = 100°C 25
TA = 25°C
TA = 100°C 1.9
= 10 ms
p
P
P
I
E
R
q
R
q
2
, 2 oz. Cu pad.
DSS
GS
I
D
D
I
D
D
DM
S
AS
T
L
JC
JA
stg
60 V
±20 V
230
170
35
3.8
900 A
−55 to
+175
190 A
451 mJ
260 °C
0.9
39
A
W
A
W
°C
°C/W
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V
(BR)DSS
60 V
G (4)
R
MAX ID MAX
DS(ON)
1.6 mW @ 10 V
D (5)
S (1,2,3)
N−CHANNEL MOSFET
230 A
MARKING
DIAGRAM
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
5C612N = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
S
S
S
G
D
D
5C612N
AYWZZ
D
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
May, 2019 − Rev. 2
1 Publication Order Number:
NTMFS5C612N/D
NTMFS5C612N
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Ty p Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
VGS = 0 V,
V
= 60 V
DS
TJ = 25°C 10
TJ = 125°C 250
VDS = 0 V, VGS = 20 V 100 nA
60 V
12.8
mV/°C
mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient V
Drain−to−Source On Resistance R
V
GS(TH)
GS(TH)/TJ
DS(on)
VGS = VDS, ID = 250 mA
VGS = 10 V ID = 50 A 1.4 1.6
2.0 4.0 V
−9.4 mV/°C
mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V
C
ISS
OSS
RSS
G(TOT)
G(TH)
GS
GD
GP
VGS = 0 V, f = 1 MHz, VDS = 25 V
VGS = 10 V, VDS = 48 V; ID = 50 A
4830
3180
22
60.2
14.2
23.3
6.3
4.9 V
pF
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time t
d(ON)
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
r
f
VGS = 10 V, VDS = 48 V,
= 50 A, RG = 2.5 W
I
D
14.2
46.9
38.9
11.9
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= 50 A
S
VGS = 0 V, dIS/dt = 100 A/ms,
I
= 50 A
S
TJ = 25°C 0.81 1.0
TJ = 125°C 0.67
82.4
40.8
41.6
139 nC
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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NTMFS5C612N
TYPICAL CHARACTERISTICS
250
225
200
175
150
125
100
75
, DRAIN CURRENT (A)
D
I
50
25
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
6
5
4
3
VGS = 10 V to 6.0 V
5.0 V
4.5 V
TJ = 25°C
= 50 A
I
D
250
225
200
175
150
125
100
75
, DRAIN CURRENT (A)
D
I
50
25
3.02.52.01.51.00.50
0
8
7
6
5
4
VDS = 10 V
TJ = 25°C
TJ = 25°C
TJ = −55°C
VGS = 6 V
TJ = 125°C
3.5
4.0 4.5
5.03.02.52.01.51.00.50
, DRAIN−TO−SOURCE RESISTANCE (mW)
DS(on)
R
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
DS(on)
R
2
1
0
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
87654 40 45
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.9
VGS = 10 V
= 50 A
1.7
1.5
1.3
1.1
0.9
0.7
I
D
50
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
, DRAIN−TO−SOURCE RESISTANCE (mW)
109
DS(on)
R
100,000
10,000
, LEAKAGE (nA)
1000
DSS
I
15012510075250−25−50
3
2
1
0
VGS = 10 V
3530 50252015105
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
TJ = 150°C
TJ = 125°C
TJ = 85°C
100
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
55453525155
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