ON Semiconductor NTMFS5C430NL User Manual
NTMFS5C430NL
MOSFET – Power, Single,
N-Channel
40 V, 1.4 mW, 200 A
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
• Low Q
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 3)
Power Dissipation
R
q
JC
Continuous Drain
Current R
(Notes 1, 2, 3)
Power Dissipation
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature TJ, T
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Single Pulse Drain−to−Source Voltage
= 10 ms)
(t
p
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
q
JC
(Note 1)
q
JA
(Notes 1 & 2)
= 15 A)
L(pk)
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
= 25°C unless otherwise noted)
J
Symbol Value Unit
TC = 25°C
Steady
State
Steady
State
TA = 25°C, t
TC = 100°C 140
TC = 25°C
TC = 100°C 53
TA = 25°C
TA = 100°C 27
TA = 25°C
TA = 100°C 1.9
= 10 ms
p
P
P
I
E
V
DSM
R
q
R
q
2
, 2 oz. Cu pad.
DSS
GS
I
D
D
I
D
D
DM
S
AS
T
L
JC
JA
stg
40 V
±20 V
200
110
38
3.8
900 A
−55 to
+175
120 A
493 mJ
48 V
260 °C
1.4
40
A
W
A
W
°C
°C/W
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V
(BR)DSS
40 V
G (4)
R
MAX ID MAX
DS(ON)
1.4 mW @ 10 V
2.2 mW @ 4.5 V
D (5)
S (1,2,3)
N−CHANNEL MOSFET
200 A
MARKING
DIAGRAM
G
S
S
S
D
D
5C430L
AYWZZ
D
D
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
5C430L = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
May, 2019− Rev. 3
1 Publication Order Number:
NTMFS5C430NL/D
NTMFS5C430NL
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Ty p Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
VGS = 0 V,
V
= 40 V
DS
TJ = 25 °C 10
TJ = 125°C 250
VDS = 0 V, VGS = 20 V 100 nA
40 V
1.3
mV/°C
mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient V
V
GS(TH)/TJ
Drain−to−Source On Resistance R
Forward Transconductance g
GS(TH)
DS(on)
FS
VGS = VDS, ID = 250 mA
VGS = 10 V ID = 50 A 1.2 1.4
VGS = 4.5 V ID = 50 A 1.7 2.2
VDS = 15 V, ID = 50 A 180 S
1.2 2.0 V
−5.6 mV/°C
mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V
C
ISS
OSS
RSS
G(TOT)
G(TOT)
G(TH)
GS
GD
GP
VGS = 0 V, f = 1 MHz, VDS = 20 V
VGS = 4.5 V, VDS = 20 V; ID = 50 A 32 45
VGS = 10 V, VDS = 20 V; ID = 50 A 70 82
VGS = 4.5 V, VDS = 20 V; ID = 50 A
4300 4942
1900 2850
72 144
7.0 10
12 15
9.0 16
2.9 5.0 V
pF
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
d(ON)
r
f
VGS = 4.5 V, VDS = 20 V,
= 50 A, RG = 1.0 W
I
D
15 28
140 273
31 67
9 19
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= 50 A
S
VGS = 0 V, dIs/dt = 100 A/ms,
I
= 50 A
S
TJ = 25°C 0.81 1.2
TJ = 125°C 0.68
61 77
29 38
32 50
80 92 nC
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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NTMFS5C430NL
TYPICAL CHARACTERISTICS
280
240
200
160
120
80
, DRAIN CURRENT (A)
D
I
40
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
3.6 V to
10 V
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
280
VDS = 5 V
240
200
160
120
80
, DRAIN CURRENT (A)
D
I
40
0
1 1.5 2 2.5 3 3.5 4
TJ = 25°C
TJ = 125°C
TJ = −55°C
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
, DRAIN−TO−SOURCE RESISTANCE (mW)
0.0
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 20 60 100 140 180 220 260
DS(on)
R
VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)
TJ = 25°C
= 50 A
I
D
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
VGS = 10 V
1.9
= 50 A
I
D
1.7
1.5
1.3
1.1
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
0.9
DS(on)
R
0.7
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
3.0
TJ = 25°C
2.5
2.0
1.5
1.0
0.5
, DRAIN−TO−SOURCE RESISTANCE (mW)
DS(on)
R
0
VGS = 4.5 V
VGS = 10 V
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100000
TJ = 175°C
10000
1000
, LEAKAGE (nA)
DSS
I
100
10
010203040
TJ = 125°C
TJ = 85°C
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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