ON Semiconductor NTMFS5C430N User Manual

NTMFS5C430N

Power MOSFET

40 V, 1.7 mW, 185 A, Single N−Channel

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

• Low Q

• These Devices are Pb−Free and are RoHS Compliant

to Minimize Conduction Losses

DS(on)

and Capacitance to Minimize Driver Losses

G

www.onsemi.com

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain

Current R
(Notes 1, 3)

Power Dissipation
R

q

JC

Continuous Drain
Current R
(Notes 1, 2, 3)

Power Dissipation
R

q

JA

Pulsed Drain Current
Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche

Energy (I
Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

q

JC

(Note 1)

q

JA

(Notes 1 & 2)

= 15 A)

L(pk)

= 25°C unless otherwise noted)

J

Symbol Value Unit

TC = 25°C

Steady

State

Steady

State

TA = 25°C, t

TC = 100°C 131

TC = 25°C

TC = 100°C 53

TA = 25°C

TA = 100°C 25

TA = 25°C

TA = 100°C 1.9

= 10 ms

p

P

P

I

E

DSS

GS

I

D

D

I

D

D

DM

S

AS

T

L

stg

40 V
±20 V
185

106

35

3.8

900 A

−55 to
+ 175

102 A
338 mJ

260 °C

A

W

A

W

°C

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)

1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm

3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.

R

q

JC

R

q

JA

2

, 2 oz. Cu pad.

1.4
40

°C/W

V

(BR)DSS

40 V

G (4)

R

MAX ID MAX

DS(ON)

1.7 mW @ 10 V

D (5,6)

S (1,2,3)

N−CHANNEL MOSFET

185 A

MARKING
DIAGRAM

1

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

5C430N = NTMFS5C430N
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability

S
S
S

G

D

D

5C430N

AYWZZ

D

D

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2016

June, 2016 − Rev. 0

1 Publication Order Number:

NTMFS5C430N/D

NTMFS5C430N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage

V

V

Temperature Coefficient
Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS

T

J

DSS

GSS

VGS = 0 V, ID = 250 mA

/

VGS = 0 V,

V

= 40 V

DS

TJ = 25 °C 10

TJ = 125°C 100

VDS = 0 V, VGS = 20 V 100 nA

40 V

12.8
mV/°C

mA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage
Threshold Temperature Coefficient V

V

GS(TH)/TJ

Drain−to−Source On Resistance R
Forward Transconductance g

GS(TH)

DS(on)

FS

VGS = VDS, ID = 250 mA

VGS = 10 V ID = 50 A 1.4 1.7

VDS =15 V, ID = 50 A 130 S

2.5 3.5 V

−8.2 mV/°C
mW

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V

C

ISS
OSS
RSS

G(TOT)

G(TH)

GS
GD
GP

VGS = 0 V, f = 1 MHz, VDS = 25 V

VGS = 10 V, VDS = 20 V; ID = 50 A 47

VGS = 10 V, VDS = 20 V; ID = 50 A

3300
1600

45

10
16

7

4.7 V

pF

nC

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

t

d(ON)

Rise Time t
Turn−Off Delay Time t

d(OFF)

Fall Time t

r

f

VGS = 10 V, VDS = 20 V,

= 50 A, RG = 2.5 W

I

D

13
48
29

ns

8

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q

V

SD

RR

a
b
RR

VGS = 0 V,

I

= 50 A

S

VGS = 0 V, dIS/dt = 100 A/ms,

I

= 50 A

S

TJ = 25°C 0.83 1.2

TJ = 125°C 0.7

57
30
27

68 nC

V

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

www.onsemi.com

2

NTMFS5C430N

TYPICAL CHARACTERISTICS

200

160

120

80

, DRAIN CURRENT (A)

D

I

40

0

0 0.5 1.0 1.5 2.0 2.5 3.0

VGS = 6 V to 10 V

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

5.2 V

4.8 V

4.4 V

4.0 V

200

VDS = 10 V

175
150
125
100

75

, DRAIN CURRENT (A)

50

D

I

25

0

012345 7

TJ = 25°C

TJ = 125°C

TJ = −55°C

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

, DRAIN−TO−SOURCE RESISTANCE (mW)

0

3 4 5 6 7 8 9 10 10 30 50 70 90 110 130

DS(on)

R

VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

TJ = 25°C

= 50 A

I

D

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

1.60

1.55

1.50

1.45

1.40

1.35

1.30

1.25

, DRAIN−TO−SOURCE RESISTANCE (mW)

1.20

DS(on)

R

TJ = 25°C

VGS = 10 V

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

6

150

2.0
VGS = 10 V

= 50 A

I

, NORMALIZED DRAIN−TO−

SOURCE RESISTANCE

DS(on)

R

1.8

1.6

1.4

1.2

1.0

0.8

0.6

D

−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Temperature

1.E−04

1.E−05

, LEAKAGE (A)

1.E−06

DSS

I

1.E−07

www.onsemi.com

3

TJ = 150°C

TJ = 125°C

TJ = 85°C

510 20 30 40

15 25 35

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

NTMFS5C430N

TYPICAL CHARACTERISTICS

1.E+04

1.E+03

C

1.E+02

C, CAPACITANCE (pF)

1.E+01

VGS = 0 V

= 25°C

T

J

f = 1 MHz

010203040

5 152535

RSS

VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, GATE CHARGE (nC)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Charge

1000

100

t

r

t

d(off)

t

10

d(on)

t

f

VGS = 10 V
V

DS

I

= 50 A

D

t, TIME (ns)

1

1 10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

1000

C

C

OSS

= 20 V

ISS

10

9
8
7
6

Q

GS

Q

GD

5
4
3
2

, GATE−TO−SOURCE VOLTAGE (V)

1

GS

V

0

010152030354050

52545

VDS = 20 V

= 25°C

T

J

I

= 50 A

D

100

VGS = 0 V

10

, SOURCE CURRENT (A)

S

I

TJ = 150°C

1

0.3 0.5 0.6 0.7 0.8 0.9 1.0

0.4
V

SD

TJ = 125°C TJ = 25°C TJ = −55°C

, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage vs. Current

100

100

10

TC = 25°C

≤ 10 V

V

GS

Single Pulse

, DRAIN CURRENT (A)

1

D

I

0.1

Figure 11. Safe Operating Area Figure 12. I

Limit

R

DS(on)

Thermal Limit
Package Limit

1 10 1000.1

VDS (V) TIME IN AVALANCHE (s)

500 ms

1 ms

10 ms

www.onsemi.com

4

TJ = 25°C

, (A)

PEAK

I

10

TJ = 100°C

1

1E−4 1E−3 10E−2

vs. Time in Avalanche

PEAK

100

(°C/W)

JA

q

R

0.1

10

1

NTMFS5C430N

TYPICAL CHARACTERISTICS

50% Duty Cycle

20%
10%

5%
2%

1%

0.01

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Single Pulse

PULSE TIME (sec)

Figure 13. Thermal Characteristics

DEVICE ORDERING INFORMATION

Device Marking Package Shipping

NTMFS5C430NT1G 5C430N DFN5

(Pb−Free)

NTMFS5C430NT3G 5C430N DFN5

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

1500 / Tape & Reel

5000 / Tape & Reel

†

www.onsemi.com

5

DFN5 5x6, 1.27P

8

s

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

1

SCALE 2:1

2 X

0.20 C

0.10 C

0.10 C

C

0.05

c

PIN 5

(EXPOSED PAD)

D

2

D1

1234

TOP VIEW

SIDE VIEW

8X

b

A0.10 B

L

14

E2

G

D2

BOTTOM VIEW

A

B

E1

E

2

A

DETAIL A

e/2
e

K

M

L1

0.475

2 X

SOLDERING FOOTPRINT*

2X

2X

(SO−8FL)

CASE 488AA

ISSUE N

0.20 C

c

DETAIL A

RECOMMENDED

4.5600.495

2X

1.530

4 X

q

3.200

A1

C

SEATING

PLANE

DATE 25 JUN 201

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.

DIM MIN NOM

MILLIMETERS

A 0.90 1.00

A1 0.00 −−−

b 0.33 0.41
c 0.23 0.28

D 5.15

5.00 5.30

D1 4.70 4.90
D2 3.80 4.00

E 6.15

6.00 6.30

E1 5.70 5.90
E2 3.45 3.65

e 1.27 BSC
G 0.51 0.575
K 1.20 1.35

L 0.51 0.575

L1 0.125 REF

M 3.00 3.40

q 0 −−−

_

MAX

1.10

0.05

0.51

0.33

5.10

4.20

6.10

3.85

0.71

1.50

0.71

3.80
12

_

GENERIC

MARKING DIAGRAM*

1

XXXXXX

AYWZZ

XXXXXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability

*This information is generic. Please refer to

device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some product
may not follow the Generic Marking.

4.530

STYLE 1:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

STYLE 2:

PIN 1. ANODE

2. ANODE

3. ANODE

4. NO CONNECT

5. CATHODE

2X

0.905

0.965

1.000

4X

4X

0.750

1

DIMENSIONS: MILLIMETERS

1.330

1.270
PITCH

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.

© Semiconductor Components Industries, LLC, 2018

98AON14036D
DFN5 5x6, 1.27P (SO−8FL)

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1

www.onsemi.com

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor ’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

. ON Semiconductor reserves the right to make changes without further notice to any products herein.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:
Email Requests to: [e-mail]

ON Semiconductor Website: www.onsemi.com

TECHNICAL SUPPORT
North American Technical Support:

Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: [phone]

Europe, Middle East and Africa Technical Support:

Phone: [phone]
For additional information, please contact your local Sales Representative

◊

www.onsemi.com

1