ON Semiconductor NTMFS5C430N User Manual

NTMFS5C430N

Power MOSFET

40 V, 1.7 mW, 185 A, Single N−Channel

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

• Low Q

• These Devices are Pb−Free and are RoHS Compliant

to Minimize Conduction Losses

DS(on)

and Capacitance to Minimize Driver Losses

G

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MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain

Current R
(Notes 1, 3)

Power Dissipation
R

q

JC

Continuous Drain
Current R
(Notes 1, 2, 3)

Power Dissipation
R

q

JA

Pulsed Drain Current
Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche

Energy (I
Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

q

JC

(Note 1)

q

JA

(Notes 1 & 2)

= 15 A)

L(pk)

= 25°C unless otherwise noted)

J

Symbol Value Unit

TC = 25°C

Steady

State

Steady

State

TA = 25°C, t

TC = 100°C 131

TC = 25°C

TC = 100°C 53

TA = 25°C

TA = 100°C 25

TA = 25°C

TA = 100°C 1.9

= 10 ms

p

P

P

I

E

DSS

GS

I

D

D

I

D

D

DM

S

AS

T

L

stg

40 V
±20 V
185

106

35

3.8

900 A

−55 to
+ 175

102 A
338 mJ

260 °C

A

W

A

W

°C

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)

1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm

3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.

R

q

JC

R

q

JA

2

, 2 oz. Cu pad.

1.4
40

°C/W

V

(BR)DSS

40 V

G (4)

R

MAX ID MAX

DS(ON)

1.7 mW @ 10 V

D (5,6)

S (1,2,3)

N−CHANNEL MOSFET

185 A

MARKING
DIAGRAM

1

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

5C430N = NTMFS5C430N
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability

S
S
S

G

D

D

5C430N

AYWZZ

D

D

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2016

June, 2016 − Rev. 0

1 Publication Order Number:

NTMFS5C430N/D

NTMFS5C430N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage

V

V

Temperature Coefficient
Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS

T

J

DSS

GSS

VGS = 0 V, ID = 250 mA

/

VGS = 0 V,

V

= 40 V

DS

TJ = 25 °C 10

TJ = 125°C 100

VDS = 0 V, VGS = 20 V 100 nA

40 V

12.8
mV/°C

mA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage
Threshold Temperature Coefficient V

V

GS(TH)/TJ

Drain−to−Source On Resistance R
Forward Transconductance g

GS(TH)

DS(on)

FS

VGS = VDS, ID = 250 mA

VGS = 10 V ID = 50 A 1.4 1.7

VDS =15 V, ID = 50 A 130 S

2.5 3.5 V

−8.2 mV/°C
mW

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V

C

ISS
OSS
RSS

G(TOT)

G(TH)

GS
GD
GP

VGS = 0 V, f = 1 MHz, VDS = 25 V

VGS = 10 V, VDS = 20 V; ID = 50 A 47

VGS = 10 V, VDS = 20 V; ID = 50 A

3300
1600

45

10
16

7

4.7 V

pF

nC

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

t

d(ON)

Rise Time t
Turn−Off Delay Time t

d(OFF)

Fall Time t

r

f

VGS = 10 V, VDS = 20 V,

= 50 A, RG = 2.5 W

I

D

13
48
29

ns

8

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q

V

SD

RR

a
b
RR

VGS = 0 V,

I

= 50 A

S

VGS = 0 V, dIS/dt = 100 A/ms,

I

= 50 A

S

TJ = 25°C 0.83 1.2

TJ = 125°C 0.7

57
30
27

68 nC

V

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

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2

NTMFS5C430N

TYPICAL CHARACTERISTICS

200

160

120

80

, DRAIN CURRENT (A)

D

I

40

0

0 0.5 1.0 1.5 2.0 2.5 3.0

VGS = 6 V to 10 V

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

5.2 V

4.8 V

4.4 V

4.0 V

200

VDS = 10 V

175
150
125
100

75

, DRAIN CURRENT (A)

50

D

I

25

0

012345 7

TJ = 25°C

TJ = 125°C

TJ = −55°C

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

, DRAIN−TO−SOURCE RESISTANCE (mW)

0

3 4 5 6 7 8 9 10 10 30 50 70 90 110 130

DS(on)

R

VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

TJ = 25°C

= 50 A

I

D

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

1.60

1.55

1.50

1.45

1.40

1.35

1.30

1.25

, DRAIN−TO−SOURCE RESISTANCE (mW)

1.20

DS(on)

R

TJ = 25°C

VGS = 10 V

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

6

150

2.0
VGS = 10 V

= 50 A

I

, NORMALIZED DRAIN−TO−

SOURCE RESISTANCE

DS(on)

R

1.8

1.6

1.4

1.2

1.0

0.8

0.6

D

−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Temperature

1.E−04

1.E−05

, LEAKAGE (A)

1.E−06

DSS

I

1.E−07

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3

TJ = 150°C

TJ = 125°C

TJ = 85°C

510 20 30 40

15 25 35

Figure 6. Drain−to−Source Leakage Current

vs. Voltage