ON Semiconductor NTMFS5C410NL User Manual
MOSFET – Power, Single,
N-Channel
40 V, 0.82 mW, 330 A
NTMFS5C410NL
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
• Low Q
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 3)
Power Dissipation
R
q
JC
Continuous Drain
Current R
(Notes 1, 2, 3)
Power Dissipation
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature
Range
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
q
JC
(Note 1)
q
JA
(Notes 1, 2)
= 29 A)
L(pk)
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
= 25°C unless otherwise noted)
J
Symbol Value Unit
TC = 25°C
Steady
State
Steady
State
TA = 25°C, t
TC = 100°C 230
TC = 25°C
TC = 100°C 56
TA = 25°C
TA = 100°C 35
TA = 25°C
TA = 100°C 1.3
= 10 ms
p
P
P
I
TJ, T
E
R
q
R
q
2
, 2 oz. Cu pad.
DSS
GS
I
D
D
I
D
D
DM
S
AS
T
L
JC
JA
stg
40 V
±20 V
330
139
50
3.2
900 A
−55 to
+175
162 A
706 mJ
260 °C
0.9
39
A
W
A
W
°C
°C/W
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V
(BR)DSS
40 V
G (4)
R
MAX ID MAX
DS(ON)
0.82 mW @ 10 V
1.2 mW @ 4.5 V
D (5)
S (1,2,3)
N−CHANNEL MOSFET
330 A
MARKING
DIAGRAM
G
S
S
S
D
D
5C410L
AYWZZ
D
D
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
5C410L = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
January, 2021 − Rev. 8
1 Publication Order Number:
NTMFS5C410NL/D
NTMFS5C410NL
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Ty p Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
VGS = 0 V,
V
= 40 V
DS
TJ = 25 °C 10
TJ = 125°C 250
VDS = 0 V, VGS = 20 V 100 nA
40 V
21.2
mV/°C
mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient V
V
GS(TH)/TJ
Drain−to−Source On Resistance R
Forward Transconductance g
GS(TH)
DS(on)
FS
VGS = VDS, ID = 250 mA
VGS = 10 V ID = 50 A 0.65 0.82
VGS = 4.5 V ID = 50 A 0.95 1.2
VDS = 15 V, ID = 50 A 190 S
1.2 2.0 V
−5.75 mV/°C
mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V
C
ISS
OSS
RSS
G(TOT)
G(TOT)
G(TH)
GS
GD
GP
VGS = 0 V, f = 1 MHz, VDS = 25 V
VGS = 4.5 V, VDS = 20 V; ID = 50 A 66
VGS = 10 V, VDS = 20 V; ID = 50 A 143
VGS = 4.5 V, VDS = 20 V; ID = 50 A
8862
3328
77
6.75
21.4
22
2.7 V
pF
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(ON)
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
r
f
VGS = 4.5 V, VDS = 20 V,
= 50 A, RG = 1.0 W
I
D
20
130
66
177
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= 50 A
S
VGS = 0 V, dIS/dt = 100 A/ms,
I
= 50 A
S
TJ = 25°C 0.73 1.2
TJ = 125°C 0.6
79.5
39
40.5
126 nC
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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NTMFS5C410NL
TYPICAL CHARACTERISTICS
200
180
160
140
120
100
80
60
, DRAIN CURRENT (A)
D
I
40
20
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.0013
0.0012
0.0011
0.0010
0.0009
0.0008
0.0007
, DRAIN−TO−SOURCE RESISTANCE (W)
0.0006
DS(on)
R
Figure 3. On−Resistance vs. Gate−to−Source
10 V to 3.2 V
3.0 V
2.8 V
2.0 2.5
TJ = 25°C
= 50 A
I
D
VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)
3.01.51.00.50
109876543
180
160
140
120
100
80
60
, DRAIN CURRENT (A)
D
40
I
20
0
0.0012
0.0011
0.0010
0.0009
0.0008
0.0007
0.0006
0.0005
, DRAIN−TO−SOURCE RESISTANCE (W)
0.0004
DS(on)
R
TJ = 25°C
TJ = 25°C
TJ = 125°C
TJ = −55°C
VGS = 4.5 V
VGS = 10 V
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
3.0 3.5
50 6040302010
4.02.52.01.51.00.50
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
DS(on)
R
1.9
1.7
1.5
1.3
1.1
0.9
0.7
1M
VGS = 10 V
= 40 A
I
D
50
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
, LEAKAGE (nA)
DSS
I
15012510075250−25−50
100k
10k
1k
100
10
10 20
Figure 6. Drain−to−Source Leakage Current
Temperature
TJ = 150°C
TJ = 125°C
TJ = 85°C
vs. Voltage
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