ON Semiconductor NTMFS5C410N User Manual

MOSFET – Single,

N-Channel

40 V, 0.92 mW, 300 A

NTMFS5C410N

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

• Low Q

to Minimize Conduction Losses

DS(on)

and Capacitance to Minimize Driver Losses

G

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain
Current R
(Notes 1, 3)

Power Dissipation
R

q

JC

Continuous Drain
Current R
(Notes 1, 2, 3)

Power Dissipation
R

q

JA

Pulsed Drain Current

Operating Junction and Storage Temperature
Range

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche
Energy (I

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

q

JC

(Note 1)

q

JA

(Notes 1, 2)

= 34 A)

L(pk)

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm

3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.

= 25°C unless otherwise noted)

J

Symbol Value Unit

TC = 25°C

Steady

State

Steady

State

TA = 25°C, t

TC = 100°C 212

TC = 25°C

TC = 100°C 83

TA = 25°C

TA = 100°C 32

TA = 25°C

TA = 100°C 1.9

= 10 ms

p

P

P

I

TJ, T

E

R

q

R

q

2

, 2 oz. Cu pad.

DSS

GS

I

D

D

I

D

D

DM

S

AS

T

L

JC

JA

stg

40 V

±20 V

300

166

46

3.9

900 A

−55 to
+175

158 A

578 mJ

260 °C

0.9

39

A

W

A

W

°C

°C/W

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V

(BR)DSS

40 V

G (4)

R

MAX ID MAX

DS(ON)

0.92 mW @ 10 V

D (5,6)

S (1,2,3)

N−CHANNEL MOSFET

300 A

MARKING
DIAGRAM

1

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

5C410N = NTMFS5C410N
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability

S
S
S

G

D

D

5C410N

AYWZZ

D

D

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2016

October, 2020 − Rev. 1

1 Publication Order Number:

NTMFS5C410N/D

NTMFS5C410N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Ty p Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage

V

V

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS

T

J

DSS

GSS

VGS = 0 V, ID = 250 mA

/

VGS = 0 V,

V

= 40 V

DS

TJ = 25°C 10

TJ = 125°C 100

VDS = 0 V, VGS = 20 V 100 nA

40 V

5

mV/°C

mA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Threshold Temperature Coefficient V

V

GS(TH)/TJ

Drain−to−Source On Resistance R

Forward Transconductance g

GS(TH)

DS(on)

FS

VGS = VDS, ID = 250 mA

VGS = 10 V ID = 50 A 0.76 0.92

VDS =15 V, ID = 50 A 190 S

2.5 3.5 V

−8.6 mV/°C

mW

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Plateau Voltage V

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

GP

VGS = 0 V, f = 1 MHz, VDS = 25 V

VGS = 10 V, VDS = 32 V; ID = 50 A 86

VGS = 10 V, VDS = 32 V; ID = 50 A

6100

3400

70

18

28

14

4.9 V

pF

nC

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

t

d(ON)

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

r

f

VGS = 10 V, VDS = 32 V,

= 50 A, RG = 2.5 W

I

D

54

162

227

173

ns

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

V

SD

RR

a

b

RR

VGS = 0 V,

I

= 50 A

S

VGS = 0 V, dIS/dt = 100 A/ms,

I

= 50 A

S

TJ = 25°C 0.8 1.2

TJ = 125°C 0.65

91

42

49

159 nC

V

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

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NTMFS5C410N

TYPICAL CHARACTERISTICS

280

240

200

160

120

80

, DRAIN CURRENT (A)

D

I

40

0

5.2 V

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

, DRAIN−TO−SOURCE RESISTANCE (mW)

0

DS(on)

R

VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Gate−to−Source

10 V to 6.0 V

Voltage

VGS = 4.0 V

2.0 2.5

TJ = 25°C

= 50 A

I

D

4.8 V

4.4 V

300

250

200

150

100

, DRAIN CURRENT (A)

D

I

50

1.00

0.95

0.90

0.85

0.80

0.75

0.70

0.65

0.60

0.55

, DRAIN−TO−SOURCE RESISTANCE (mW)

0.50

DS(on)

R

0

3.01.51.00.50

109876543

VDS = 10 V

TJ = 25°C

TJ = 125°C

TJ = 25°C

TJ = −55°C

56

VGS = 10 V

200 250150100500

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

743210

, NORMALIZED DRAIN−TO−

SOURCE RESISTANCE

DS(on)

R

2.0

1.8

1.6

1.4

1.2

1.0

0.8

1.E−03

VGS = 10 V

= 50 A

I

D

1.E−04

1.E−05

, LEAKAGE (A)

DSS

I

1.E−06

50 175

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

15012510075250−25−50

1.E−07

Figure 5. On−Resistance Variation with

10 20

Figure 6. Drain−to−Source Leakage Current

Temperature

TJ = 150°C

TJ = 125°C

TJ = 85°C

vs. Voltage

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