MOSFET – Single,
N-Channel
40 V, 0.92 mW, 300 A
NTMFS5C410N
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
• Low Q
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 3)
Power Dissipation
R
q
JC
Continuous Drain
Current R
(Notes 1, 2, 3)
Power Dissipation
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature
Range
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
q
JC
(Note 1)
q
JA
(Notes 1, 2)
= 34 A)
L(pk)
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
= 25°C unless otherwise noted)
J
Symbol Value Unit
TC = 25°C
Steady
State
Steady
State
TA = 25°C, t
TC = 100°C 212
TC = 25°C
TC = 100°C 83
TA = 25°C
TA = 100°C 32
TA = 25°C
TA = 100°C 1.9
= 10 ms
p
P
P
I
TJ, T
E
R
q
R
q
2
, 2 oz. Cu pad.
DSS
GS
I
D
D
I
D
D
DM
S
AS
T
L
JC
JA
stg
40 V
±20 V
300
166
46
3.9
900 A
−55 to
+175
158 A
578 mJ
260 °C
0.9
39
A
W
A
W
°C
°C/W
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V
(BR)DSS
40 V
G (4)
R
MAX ID MAX
DS(ON)
0.92 mW @ 10 V
D (5,6)
S (1,2,3)
N−CHANNEL MOSFET
300 A
MARKING
DIAGRAM
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
5C410N = NTMFS5C410N
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
S
S
S
G
D
D
5C410N
AYWZZ
D
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
October, 2020 − Rev. 1
1 Publication Order Number:
NTMFS5C410N/D
NTMFS5C410N
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Ty p Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
VGS = 0 V,
V
= 40 V
DS
TJ = 25°C 10
TJ = 125°C 100
VDS = 0 V, VGS = 20 V 100 nA
40 V
5
mV/°C
mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient V
V
GS(TH)/TJ
Drain−to−Source On Resistance R
Forward Transconductance g
GS(TH)
DS(on)
FS
VGS = VDS, ID = 250 mA
VGS = 10 V ID = 50 A 0.76 0.92
VDS =15 V, ID = 50 A 190 S
2.5 3.5 V
−8.6 mV/°C
mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V
C
ISS
OSS
RSS
G(TOT)
G(TH)
GS
GD
GP
VGS = 0 V, f = 1 MHz, VDS = 25 V
VGS = 10 V, VDS = 32 V; ID = 50 A 86
VGS = 10 V, VDS = 32 V; ID = 50 A
6100
3400
70
18
28
14
4.9 V
pF
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(ON)
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
r
f
VGS = 10 V, VDS = 32 V,
= 50 A, RG = 2.5 W
I
D
54
162
227
173
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= 50 A
S
VGS = 0 V, dIS/dt = 100 A/ms,
I
= 50 A
S
TJ = 25°C 0.8 1.2
TJ = 125°C 0.65
91
42
49
159 nC
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS5C410N
TYPICAL CHARACTERISTICS
280
240
200
160
120
80
, DRAIN CURRENT (A)
D
I
40
0
5.2 V
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
, DRAIN−TO−SOURCE RESISTANCE (mW)
0
DS(on)
R
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
10 V to 6.0 V
Voltage
VGS = 4.0 V
2.0 2.5
TJ = 25°C
= 50 A
I
D
4.8 V
4.4 V
300
250
200
150
100
, DRAIN CURRENT (A)
D
I
50
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
0.55
, DRAIN−TO−SOURCE RESISTANCE (mW)
0.50
DS(on)
R
0
3.01.51.00.50
109876543
VDS = 10 V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = −55°C
56
VGS = 10 V
200 250150100500
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
743210
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
DS(on)
R
2.0
1.8
1.6
1.4
1.2
1.0
0.8
1.E−03
VGS = 10 V
= 50 A
I
D
1.E−04
1.E−05
, LEAKAGE (A)
DSS
I
1.E−06
50 175
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
15012510075250−25−50
1.E−07
Figure 5. On−Resistance Variation with
10 20
Figure 6. Drain−to−Source Leakage Current
Temperature
TJ = 150°C
TJ = 125°C
TJ = 85°C
vs. Voltage
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3
40353025155
NTMFS5C410N
TYPICAL CHARACTERISTICS
1E+4
1E+3
1E+2
C, CAPACITANCE (pF)
1E+1
1000
100
10
C
ISS
C
OSS
9
8
7
6
Q
GS
Q
GD
5
4
3
VGS = 0 V
= 25°C
T
J
f = 1 MHz
C
RSS
3525155
403020100
2
, GATE−TO−SOURCE VOLTAGE (V)
1
GS
0
V
30 70
605020100
VDS = 20 V
T
J
I
D
VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Charge
100
t
d(off)
t
f
t
r
t
d(on)
VGS = 0 V
10
= 25°C
= 50 A
9040 80
t, TIME (ns)
10
Figure 9. Resistive Switching Time Variation
1000
TC = 25°C
V
GS
100
(A)
D
I
10
1
VGS = 10 V
= 20 V
V
DS
I
= 50 A
D
, SOURCE CURRENT (A)
TJ = 150°C
S
I
1
100101
RG, GATE RESISTANCE (W)
Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
1000
≤ 10 V
dc
10 ms
0.1 ms
1 ms
0.01 ms
(A)
PEAK
I
100
T
10
R
Limit
DS(on)
Thermal Limit
Package Limit
1
1001010.1
1E−04 1E−02
VDS (V) TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area Figure 12. I
TJ = 125°C
V
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
T
J(initial)
= 100°C
J(initial)
TJ = 25°C TJ = −55°C
= 25°C
1E−03
vs. Time in Avalanche
PEAK
0.90.8 1.00.70.60.50.40.3
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4
100
†
(t) (°C/W)
JA
q
R
0.1
0.01
10
1
10
50% Duty Cycle
20%
10%
5%
2%
1%
NTMFS5C410N
TYPICAL CHARACTERISTICS
Single Pulse
0.010.001 10.0001 0.10.00001 100.000001
PULSE TIME (sec)
Figure 13. Thermal Characteristics − R
NTMFS5C410N 650 mm2, 2 oz., Cu Single Layer Pad
100 1000
(t) (5C/W)
q
JA
1
50% Duty Cycle
20%
10%
0.1
(t) (°C/W)
5%
JC
q
2%
R
0.01
1%
TC = 25°C
0.001
Single Pulse
PULSE TIME (sec)
Figure 14. Thermal Characteristics − R
(t) (5C/W)
q
JC
0.010.001 10.0001 0.10.000010.000001
DEVICE ORDERING INFORMATION
Device Marking Package Shipping
NTMFS5C410NT1G 5C410N DFN5
(Pb−Free)
NTMFS5C410NT3G 5C410N DFN5
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
1500 / Tape & Reel
5000 / Tape & Reel
www.onsemi.com
5
DFN5 5x6, 1.27P
8
s
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
1
SCALE 2:1
2 X
0.20 C
0.10 C
0.10 C
C
0.05
c
PIN 5
(EXPOSED PAD)
D
2
D1
1234
TOP VIEW
SIDE VIEW
8X
b
A0.10 B
L
14
E2
G
D2
BOTTOM VIEW
A
B
E1
E
2
A
DETAIL A
e/2
e
K
M
L1
0.475
2 X
SOLDERING FOOTPRINT*
2X
2X
(SO−8FL)
CASE 488AA
ISSUE N
0.20 C
c
DETAIL A
RECOMMENDED
4.5600.495
2X
1.530
4 X
q
3.200
A1
C
SEATING
PLANE
DATE 25 JUN 201
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
DIM MIN NOM
A1 0.00 −−−
D1 4.70 4.90
D2 3.80 4.00
E1 5.70 5.90
E2 3.45 3.65
L1 0.125 REF
MILLIMETERS
A 0.90 1.00
b 0.33 0.41
c 0.23 0.28
D 5.15
5.00 5.30
E 6.15
6.00 6.30
e 1.27 BSC
G 0.51 0.575
K 1.20 1.35
L 0.51 0.575
M 3.00 3.40
q 0 −−−
_
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
3.80
12
_
GENERIC
MARKING DIAGRAM*
1
XXXXXX
AYWZZ
XXXXXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some product
may not follow the Generic Marking.
4.530
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
2X
0.905
0.965
1.000
4X
4X
0.750
1
DIMENSIONS: MILLIMETERS
1.330
1.270
PITCH
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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