ON Semiconductor NTMFS5844NL, NVMFS5844NL User Manual
NTMFS5844NL,
NVMFS5844NL
MOSFET – Power, Single,
N-Channel
60 V, 61 A, 12 mW
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
• Low Q
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
• NVMFS5844NLWF − Wettable Flanks Product
• NVMFS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain Current R
2, 3, 4)
Power Dissipation
R
Y
J−mb
Continuous Drain Current R
4)
Power Dissipation
R
q
JA
Pulsed Drain Current
Current Limited by Package
(Note 4)
Operating Junction and Storage Temperature TJ, T
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (T
I
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
(Notes 1,
Y
J−mb
(Notes 1, 2, 3)
(Notes 1, 3,
q
JA
(Notes 1 & 3)
= 25°C, VDD = 50 V, VGS = 10 V,
J
= 31 A, L = 0.1 mH, RG = 25 W)
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Mounting Board (top) − Steady
State (Notes 2, 3)
Junction−to−Ambient − Steady State (Note 3)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
= 25°C unless otherwise noted)
J
Symbol Value Unit
Tmb = 25°C
Steady
State
Steady
State
TA = 25°C, t
Tmb = 100°C 43
Tmb = 25°C
Tmb = 100°C 54
TA = 25°C
TA = 100°C 8.0
TA = 25°C
TA = 100°C 1.8
= 10 ms
p
TA = 25°C I
P
P
I
DmaxPkg
E
R
Y
R
q
DSS
GS
I
D
D
I
D
D
DM
S
AS
T
L
J−mb
JA
stg
60 V
"20 V
61
107
11.2
3.7
247 A
80 A
−55 to
175
60 A
48 mJ
260 °C
1.4
41
A
W
A
W
°C
°C/W
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V
(BR)DSS
60 V
G (4)
R
MAX ID MAX
DS(ON)
12 mW @ 10 V
16 mW @ 4.5 V
D (5)
S (1,2,3)
N−CHANNEL MOSFET
61 A
MARKING
DIAGRAM
D
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
S
S
S
G
D
XXXXXX
AYWZZ
D
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
May, 2019 − Rev. 5
1 Publication Order Number:
NTMFS5844NL/D
NTMFS5844NL, NVMFS5844NL
3. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
V
(BR)DSS
V
(BR)DSS
T
DSS
GSS
VGS = 0 V, ID = 250 mA
/
J
VGS = 0 V,
V
= 60 V
DS
VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient V
Drain−to−Source On Resistance R
V
GS(TH)
GS(TH)/TJ
DS(on)
VGS = VDS, ID = 250 mA
VGS = 10 V ID = 10 A 10.2 12
VGS = 4.5 V ID = 10 A 13 16
Forward Transconductance g
FS
VDS = 5 V, ID = 10 A 27 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V
Gate Resistance R
C
ISS
OSS
RSS
G(TOT)
G(TOT)
G(TH)
GS
GD
GP
G
VGS = 0 V, f = 1 MHz, VDS = 25 V
VGS = 10 V, VDS = 48 V; ID = 10 A 30
VGS = 4.5 V, VDS = 48 V; ID = 10 A
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t
Fall Time t
t
d(ON)
r
d(OFF)
f
VGS = 4.5 V, VDS = 48 V,
= 10 A, RG = 2.5 W
I
D
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= 10 A
S
VGS = 0 V, dIS/dt = 100 A/ms,
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
I
= 10 A
S
60 V
57
TJ = 25 °C 1
TJ = 125°C 100
1.5 2.3 V
6.2 mV/°C
1460
150
96
15
1.0
4.0
8.0
3.0 V
0.62
12
25
20
10
TJ = 25°C 0.79 1.2
TJ = 125°C 0.65
19
13
6.0
15 nC
mV/°C
mA
mW
pF
nC
W
ns
V
ns
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NTMFS5844NL, NVMFS5844NL
0
TYPICAL CHARACTERISTICS
80
10 V
70
60
50
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
012345
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS = 5 V
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
TJ = 25°C
Figure 1. On−Region Characteristics
0.030
ID = 10 A
= 25°C
T
0.025
0.020
0.015
0.010
J
80
VDS ≥ 10 V
70
60
50
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
12345
TJ = 25°C
TJ = 125°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = −55°C
Figure 2. Transfer Characteristics
0.016
TJ = 25°C
0.014
0.012
0.010
VGS = 4.5 V
VGS = 10 V
, DRAIN−TO−SOURCE RESISTANCE (W)
0.005
24681012
DS(on)
R
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.5
VGS = 10 V
ID = 10 A
2
1.5
1
0.5
−50 −25 0 25 50 75 100 125 150
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
DS(on)
R
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
, DRAIN−TO−SOURCE RESISTANCE (W)
0.008
DS(on)
R
100,000
10,000
, LEAKAGE (nA)
1,000
DSS
I
175
100
5 10152025303540
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS = 0 V
TJ = 150°C
TJ = 125°C
10 20 30 40 50 6
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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