ON Semiconductor NTMFS4C302N User Manual
MOSFET – Single,
N-Channel, Logic Level,
SO-8 FL
30 V, 1.15 mW, 230 A
NTMFS4C302N
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
• Low Q
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain Current R
q
JC
3)
Power Dissipation
(Notes 1, 2)
R
q
JC
Continuous Drain Current R
q
JA
3)
Power Dissipation
(Notes 1, 2)
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature TJ, T
Source Current (Body Diode) @ 10 ms I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Note 2)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
= 25°C unless otherwise noted)
J
Parameter
(Notes 1, 2,
(Notes 1, 2,
= 61 A)
L(pk)
Parameter
Steady
State
Steady
State
TA = 25°C, t
TC = 25°C I
TC = 25°C P
TA = 25°C I
TA = 25°C P
= 10 ms
p
Symbol Value Unit
DSS
GS
D
D
D
D
I
DM
stg
S
E
AS
T
L
Symbol Value Unit
R
q
JC
R
q
JA
2
, 2 oz. Cu pad.
30 V
"20 V
230 A
96 W
41 A
3.13 W
900 A
−55 to
150
128 A
186 mJ
260 °C
1.3
40
°C
°C/W
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V
(BR)DSS
30 V
G (4)
R
MAX ID MAX
DS(on)
1.15 mW @ 10 V
1.7 mW @ 4.5 V
D (5,6)
S (1,2,3)
N−CHANNEL MOSFET
230 A
MARKING
DIAGRAM
D
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
4C02N = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty
S
S
4C02N
AYWZZ
S
G
D
ORDERING INFORMATION
Device Package Shipping
NTMFS4C302NT1G SO−8 FL
(Pb−Free)
NTMFS4C302NT3G SO−8 FL
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1500 /
Tape & Reel
5000 /
Tape & Reel
D
D
†
© Semiconductor Components Industries, LLC, 2017
February, 2021 − Rev. 3
1 Publication Order Number:
NTMFS4C302N/D
NTMFS4C302N
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
VGS = 0 V,
V
= 24 V
DS
TJ = 25 °C 1.0
TJ = 125°C 100
VDS = 0 V, VGS = 20 V 100 nA
30 V
24
mV/°C
mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient V
V
GS(TH)
GS(TH)/TJ
Drain−to−Source On Resistance R
Forward Transconductance g
Gate Resistance R
DS(on)
FS
G
VGS = VDS, ID = 250 mA
VGS = 10 V ID = 30 A 0.95 1.15
VGS = 4.5 V ID = 30 A 1.35 1.7
VDS = 3 V, ID = 30 A 135 S
TA = 25 °C 0.75
1.3 2.2 V
5.8 mV/°C
mW
W
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Total Gate Charge Q
C
ISS
OSS
RSS
G(TOT)
G(TH)
GS
GD
G(TOT)
VGS = 0 V, f = 1 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 10 V, VDS = 15 V,
I
= 30 A
D
5780
2320
70
37
9.0
16
7.0
82
pF
nC
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(ON)
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
r
f
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
= 3.0 W
R
G
20
19
42
11
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= 10 A
S
VGS = 0 V, dIS/dt = 100 A/ms,
I
= 30 A
S
TJ = 25°C 0.75 1.1
TJ = 125°C 0.6
56
29
27
69 nC
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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NTMFS4C302N
TYPICAL CHARACTERISTICS
450
10 V 6 V
400
350
300
250
200
150
, DRAIN CURRENT (A)
100
D
I
50
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
2.35
2.15
1.95
1.75
1.55
4.5 V
TJ = 25°C
2
4.0 V
3.7 V
3.5 V
3.3 V
3.1 V
2.9 V
2.7 V
2.5 V
2.5
TJ = 25°C
= 30 A
I
D
450
400
350
300
250
200
150
, DRAIN CURRENT (A)
100
D
I
50
31.510.50
0
2.35
2.15
1.95
1.75
1.55
VDS = 3 V
TJ = 25°C
TJ = 25°C
TJ = 125°C
TJ = −55°C
2.5
VGS = 4.5 V
4.03.53.02.01.5
4.5
1.35
1.15
0.95
, DRAIN−TO−SOURCE RESISTANCE (mW)
0.75
DS(on)
R
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. V
1.6
VGS = 10 V
1.5
= 30 A
I
D
1.4
1.3
1.2
1.1
1.0
, DRAIN−TO−SOURCE
0.9
DS(on)
R
RESISTANCE (NORMALIZED)
0.8
0.7
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
50
Temperature
GS
1.35
1.15
0.95
, DRAIN−TO−SOURCE RESISTANCE (mW)
987106543
DS(on)
R
0.75
100500
150
VGS = 10 V
450350250 400300200
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100000
VGS = 0 V
10000
1000
, LEAKAGE (nA)
DSS
I
100
12510075250−25−50
150
10
5
TJ = 150°C
TJ = 125°C
TJ = 100°C
TJ = 85°C
30252015100
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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