ON Semiconductor NTMFS4C302N User Manual

MOSFET – Single,

N-Channel, Logic Level, SO-8 FL

30 V, 1.15 mW, 230 A

NTMFS4C302N

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

• Low Q

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (T

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current R

q

JC

3)

Power Dissipation

(Notes 1, 2)

R

q

JC

Continuous Drain Current R

q

JA

3)

Power Dissipation

(Notes 1, 2)

R

q

JA

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) @ 10 ms I

Single Pulse Drain−to−Source Avalanche Energy (I

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Junction−to−Case − Steady State (Note 2)

Junction−to−Ambient − Steady State (Note 2)

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm

3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.

to Minimize Conduction Losses

DS(on)

and Capacitance to Minimize Driver Losses

G

= 25°C unless otherwise noted)

J

Parameter

(Notes 1, 2,

= 61 A)

L(pk)

Parameter

Steady

State

Steady

State

TA = 25°C, t

TC = 25°C I

TC = 25°C P

TA = 25°C I

TA = 25°C P

= 10 ms

p

Symbol Value Unit

DSS

GS

D

I

DM

stg

S

E

AS

T

L

Symbol Value Unit

R

q

JC

R

q

JA

2

, 2 oz. Cu pad.

30 V

"20 V

230 A

96 W

41 A

3.13 W

900 A

−55 to 150

128 A

186 mJ

260 °C

1.3

40

°C

°C/W

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V

(BR)DSS

30 V

G (4)

R

MAX ID MAX

DS(on)

1.15 mW @ 10 V

1.7 mW @ 4.5 V

D (5,6)

S (1,2,3)

N−CHANNEL MOSFET

230 A

MARKING DIAGRAM

D

1

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

4C02N = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceabililty

S S

4C02N

AYWZZ

S

G

D

ORDERING INFORMATION

Device Package Shipping

NTMFS4C302NT1G SO−8 FL

(Pb−Free)

NTMFS4C302NT3G SO−8 FL

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

1500 /

Tape & Reel

5000 /

Tape & Reel

D

†

February, 2021 − Rev. 3

1 Publication Order Number:

NTMFS4C302N/D

NTMFS4C302N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

T

J

DSS

GSS

VGS = 0 V, ID = 250 mA

/

VGS = 0 V,

V

= 24 V

DS

TJ = 25 °C 1.0

TJ = 125°C 100

VDS = 0 V, VGS = 20 V 100 nA

30 V

24

mV/°C

mA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Negative Threshold Temperature Coefficient V

V

GS(TH)

GS(TH)/TJ

Drain−to−Source On Resistance R

Forward Transconductance g

Gate Resistance R

DS(on)

FS

G

VGS = VDS, ID = 250 mA

VGS = 10 V ID = 30 A 0.95 1.15

VGS = 4.5 V ID = 30 A 1.35 1.7

VDS = 3 V, ID = 30 A 135 S

TA = 25 °C 0.75

1.3 2.2 V

5.8 mV/°C

mW

W

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Total Gate Charge Q

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

G(TOT)

VGS = 0 V, f = 1 MHz, VDS = 15 V

VGS = 4.5 V, VDS = 15 V; ID = 30 A

VGS = 10 V, VDS = 15 V,

I

= 30 A

D

5780

2320

70

37

9.0

16

7.0

82

pF

nC

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

t

d(ON)

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

r

f

VGS = 4.5 V, VDS = 15 V, ID = 15 A,

= 3.0 W

R

G

20

19

42

11

ns

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

V

SD

RR

a

b

RR

VGS = 0 V,

I

= 10 A

S

VGS = 0 V, dIS/dt = 100 A/ms,

I

= 30 A

S

TJ = 25°C 0.75 1.1

TJ = 125°C 0.6

56

29

27

69 nC

V

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

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2

NTMFS4C302N

TYPICAL CHARACTERISTICS

450

10 V 6 V

400

350

300

250

200

150

, DRAIN CURRENT (A)

100

D

I

50

0

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

2.35

2.15

1.95

1.75

1.55

4.5 V

TJ = 25°C

2

4.0 V

3.7 V

3.5 V

3.3 V

3.1 V

2.9 V

2.7 V

2.5 V

2.5

TJ = 25°C

= 30 A

I

D

450

400

350

300

250

200

150

, DRAIN CURRENT (A)

100

D

I

50

31.510.50

0

2.35

2.15

1.95

1.75

1.55

VDS = 3 V

TJ = 25°C

TJ = 125°C

TJ = −55°C

2.5

VGS = 4.5 V

4.03.53.02.01.5

4.5

1.35

1.15

0.95

, DRAIN−TO−SOURCE RESISTANCE (mW)

0.75

DS(on)

R

VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 3. On−Resistance vs. V

1.6 VGS = 10 V

1.5

= 30 A

I

D

1.4

1.3

1.2

1.1

1.0

, DRAIN−TO−SOURCE

0.9

DS(on)

R

RESISTANCE (NORMALIZED)

0.8

0.7

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

50

Temperature

GS

1.35

1.15

0.95

, DRAIN−TO−SOURCE RESISTANCE (mW)

987106543

DS(on)

R

0.75 100500

150

VGS = 10 V

450350250 400300200

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

100000

VGS = 0 V

10000

1000

, LEAKAGE (nA)

DSS

I

100

12510075250−25−50

150

10

5

TJ = 150°C

TJ = 125°C

TJ = 100°C

TJ = 85°C

30252015100

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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3

NTMFS4C302N

TYPICAL CHARACTERISTICS

10000

1000

100

C, CAPACITANCE (pF)

10

1000

100

11

Q

C

iss

C

oss

10

9

8

T

7

6

C

rss

5

Q

4

Q

gd

gs

3

VGS = 0 V

= 25°C

T

J

f = 1 MHz

25201510 3050

2

, GATE−TO−SOURCE VOLTAGE (V)

1

GS

0

V

0 203040 60708090

5010

VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

1000

100

10

VGS = 0 V

TJ = 175°C

VGS = 4.5 V

= 15 V

V

DD

I

= 15 A

D

t

d(off)

t

f

t

r

t

d(on)

VDS = 15 V

= 30 A

I

D

T

= 25°C

J

t, TIME (ns)

10

1

Figure 9. Resistive Switching Time Variation

RG, GATE RESISTANCE (W)

vs. Gate Resistance

1000

100

10

VGS < 10 V Single Pulse T

= 25°C

C

1

, DRAIN CURRENT (A)

D

I

R

DS(on)

Thermal Limit Package Limit

0.1

0.01 1 10 100

Figure 11. Maximum Rated Forward Biased

1

, SOURCE CURRENT (A)

S

I

100101

0.1

0.30.2 1.1

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage vs. Current

Limit

0.1

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Safe Operating Area

TJ = 150°C

TJ = 25°C

100 ms

1 ms

10 ms

dc

TJ = −55°C

0.90.80.70.60.50.4

1.0

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4

NTMFS4C302N

TYPICAL CHARACTERISTICS

100

0.1

R(t) (°C/W)

0.01

0.001

10

1

Duty Cycle = 50%

20% 10%

5% 2%

1%

Single Pulse

1000

100

R

Steady State = 40°C/W

q

JA

0.010.0010.00010.000010.000001

PULSE TIME (sec)

0.1 1 10 100 1000

Figure 12. Thermal Response

TJ = 25°C

TJ = 100°C

10

, DRAIN CURRENT (A)

PEAK

I

1

1.0E−6 10E−6 100E−6 10E−3

TIME IN AVALANCHE (S)

1.0E−3

Figure 13. Maximum Drain Current vs. Time in

Avalanche

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5

DFN5 5x6, 1.27P

8

s

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

1

SCALE 2:1

2 X

0.20 C

0.10 C

C

0.05

c

PIN 5

(EXPOSED PAD)

D

2

D1

1234

TOP VIEW

SIDE VIEW

8X

b

A0.10 B

L

14

E2

G

D2

BOTTOM VIEW

A

B

E1

E

2

A

DETAIL A

e/2

e

K

M

L1

0.475

2 X

SOLDERING FOOTPRINT*

2X

(SO−8FL)

CASE 488AA

ISSUE N

0.20 C

c

DETAIL A

RECOMMENDED

4.5600.495

2X

1.530

4 X

q

A1

C

SEATING

PLANE

3.200

DATE 25 JUN 201

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.

DIM MIN NOM

A1 0.00 −−−

D1 4.70 4.90 D2 3.80 4.00

E1 5.70 5.90 E2 3.45 3.65

L1 0.125 REF

MILLIMETERS

A 0.90 1.00 b 0.33 0.41

c 0.23 0.28

D 5.15

5.00 5.30

E 6.15

6.00 6.30

e 1.27 BSC G 0.51 0.575 K 1.20 1.35 L 0.51 0.575

M 3.00 3.40

q 0 −−−

_

MAX

1.10

0.05

0.51

0.33

5.10

4.20

6.10

3.85

0.71

1.50

0.71

3.80 12

_

GENERIC

MARKING DIAGRAM*

1

XXXXXX

AYWZZ

XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability

*This information is generic. Please refer to

device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some product may not follow the Generic Marking.

4.530

STYLE 1:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

STYLE 2:

PIN 1. ANODE

2. ANODE

3. ANODE

4. NO CONNECT

5. CATHODE

2X

0.905

0.965

1.000

4X

0.750

1

DIMENSIONS: MILLIMETERS

1.330

1.270 PITCH

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98AON14036D DFN5 5x6, 1.27P (SO−8FL)

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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ON Semiconductor NTMFS4C302N User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual