ON Semiconductor NTMFS4C01N User Manual
NTMFS4C01N
MOSFET – Power, Single,
N-Channel, SO-8FL
30 V, 0.9 mW, 303 A
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
• Low Q
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain Current R
Power Dissipation
R
Continuous Drain
Current R
(Notes 1, 2, 3)
Power Dissipation
R
Pulsed Drain Current
Operating Junction and Storage Temperature TJ, T
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
(Notes 1, 3)
q
JC
(Notes 1, 3)
q
JC
q
JA
(Notes 1, 2, 3)
q
JA
L(pk)
= 35 A)
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
= 25°C unless otherwise noted)
J
Symbol Value Unit
TC = 25°C I
Steady
State
Steady
State
TA = 25°C, t
TC = 25°C P
TA = 25°C I
TA = 25°C P
= 10 ms
p
Symbol Value Unit
R
R
2
, 2 oz. Cu pad.
I
E
DSS
GS
D
D
D
D
DM
S
AS
T
L
q
JC
q
JA
stg
30 V
"20 V
303 A
134 W
47 A
3.2 W
552 A
−55 to
150
110 A
862 mJ
260 °C
0.93
39
°C
°C/W
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V
(BR)DSS
30 V
G (4)
R
MAX ID MAX
DS(ON)
0.9 mW @ 10 V
1.2 mW @ 4.5 V
D (5)
S (1,2,3)
N−CHANNEL MOSFET
303 A
MARKING
DIAGRAM
D
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
S
S
4C01N
S
AYWZZ
G
D
ORDERING INFORMATION
Device Package Shipping
NTMFS4C01NT1G SO−8FL
(Pb−Free)
NTMFS4C01NT3G SO−8FL
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1500 /
Tape & Reel
5000 /
Tape & Reel
D
D
†
© Semiconductor Components Industries, LLC, 2014
May, 2019− Rev. 2
1 Publication Order Number:
NTMFS4C01N/D
NTMFS4C01N
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
VGS = 0 V,
V
= 24 V
DS
TJ = 25 °C 1
TJ = 125°C 100
VDS = 0 V, VGS = 20 V 100 nA
30 V
16.3
mV/°C
mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient V
V
GS(TH)
GS(TH)/TJ
Drain−to−Source On Resistance R
Forward Transconductance g
Gate Resistance R
DS(on)
FS
G
VGS = VDS, ID = 250 mA
VGS = 10 V ID = 30 A 0.71 0.9
VGS = 4.5 V ID = 30 A 0.94 1.2
VDS = 3 V ID = 30 A 183 S
TA = 25 °C 1.0
1.3 2.2 V
5.8 mV/°C
mW
W
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Total Gate Charge Q
C
ISS
OSS
RSS
G(TOT)
G(TH)
GS
GD
G(TOT)
VGS = 0 V, f = 1 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 10 V, VDS = 15 V,
I
= 30 A
D
10144
5073
148
63
18
29
13
139
pF
nC
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(ON)
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
r
f
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
= 3.0 W
R
G
29
68
53
36
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= 10 A
S
VGS = 0 V, dIS/dt = 100 A/ms,
I
= 30 A
S
TJ = 25°C 0.73 1.1
TJ = 125°C 0.55
87
43
44
147 nC
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4C01N
TYPICAL CHARACTERISTICS
400
10 V
350
300
250
200
150
100
, DRAIN CURRENT (A)
D
I
50
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
3.6 V
4.5 V
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
3.4 V
3.2 V
3.0 V
2.8 V
VGS = 2.6 V
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
, DRAIN−TO−SOURCE RESISTANCE (mW)
0.6
345678910
DS(on)
R
VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)
ID = 30 A
TJ = 25°C
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
400
350
300
250
200
150
100
, DRAIN CURRENT (A)
D
I
, DRAIN−TO−SOURCE RESISTANCE (mW)
DS(on)
R
VDS = 3 V
TJ = 25°C
TJ = 150°C
50
0
1.5 2 2.5 3 3.5 4
1.5
TJ = 25°C
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0 50 100 150 200 250 300 350 400
TJ = −55°C
VGS = 4.5 V
VGS = 10 V
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
DS(on)
R
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 10 V
= 30 A
I
D
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100000
10000
1000
, LEAKAGE (nA)
DSS
I
100
1251007550250−25−50
150
10
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3
TJ = 125°C
TJ = 100°C
TJ = 85°C
0 5 10 15 20 25 30
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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