Page 1
NTMFS4C01N
MOSFET – Power, Single,
N-Channel, SO-8FL
30 V, 0.9 mW, 303 A
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
• Low Q
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain Current R
Power Dissipation
R
Continuous Drain
Current R
(Notes 1, 2, 3)
Power Dissipation
R
Pulsed Drain Current
Operating Junction and Storage Temperature TJ, T
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
(Notes 1, 3)
q
JC
(Notes 1, 3)
q
JC
q
JA
(Notes 1, 2, 3)
q
JA
L(pk)
= 35 A)
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
= 25°C unless otherwise noted)
J
Symbol Value Unit
TC = 25°C I
Steady
State
Steady
State
TA = 25°C, t
TC = 25°C P
TA = 25°C I
TA = 25°C P
= 10 ms
p
Symbol Value Unit
R
R
2
, 2 oz. Cu pad.
I
E
DSS
GS
D
D
D
D
DM
S
AS
T
L
q
JC
q
JA
stg
30 V
"20 V
303 A
134 W
47 A
3.2 W
552 A
−55 to
150
110 A
862 mJ
260 °C
0.93
39
°C
°C/W
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V
(BR)DSS
30 V
G (4)
R
MAX ID MAX
DS(ON)
0.9 mW @ 10 V
1.2 mW @ 4.5 V
D (5)
S (1,2,3)
N−CHANNEL MOSFET
303 A
MARKING
DIAGRAM
D
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
S
S
4C01N
S
AYWZZ
G
D
ORDERING INFORMATION
Device Package Shipping
NTMFS4C01NT1G SO−8FL
(Pb−Free)
NTMFS4C01NT3G SO−8FL
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1500 /
Tape & Reel
5000 /
Tape & Reel
D
D
†
© Semiconductor Components Industries, LLC, 2014
May, 2019− Rev. 2
1 Publication Order Number:
NTMFS4C01N/D
Page 2
NTMFS4C01N
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
VGS = 0 V,
V
= 24 V
DS
TJ = 25 °C 1
TJ = 125°C 100
VDS = 0 V, VGS = 20 V 100 nA
30 V
16.3
mV/°C
mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient V
V
GS(TH)
GS(TH)/TJ
Drain−to−Source On Resistance R
Forward Transconductance g
Gate Resistance R
DS(on)
FS
G
VGS = VDS, ID = 250 mA
VGS = 10 V ID = 30 A 0.71 0.9
VGS = 4.5 V ID = 30 A 0.94 1.2
VDS = 3 V ID = 30 A 183 S
TA = 25 °C 1.0
1.3 2.2 V
5.8 mV/°C
mW
W
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Total Gate Charge Q
C
ISS
OSS
RSS
G(TOT)
G(TH)
GS
GD
G(TOT)
VGS = 0 V, f = 1 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 10 V, VDS = 15 V,
I
= 30 A
D
10144
5073
148
63
18
29
13
139
pF
nC
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(ON)
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
r
f
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
= 3.0 W
R
G
29
68
53
36
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= 10 A
S
VGS = 0 V, dIS/dt = 100 A/ms,
I
= 30 A
S
TJ = 25°C 0.73 1.1
TJ = 125°C 0.55
87
43
44
147 nC
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
Page 3
NTMFS4C01N
TYPICAL CHARACTERISTICS
400
10 V
350
300
250
200
150
100
, DRAIN CURRENT (A)
D
I
50
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
3.6 V
4.5 V
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
3.4 V
3.2 V
3.0 V
2.8 V
VGS = 2.6 V
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
, DRAIN−TO−SOURCE RESISTANCE (mW)
0.6
345678910
DS(on)
R
VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)
ID = 30 A
TJ = 25°C
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
400
350
300
250
200
150
100
, DRAIN CURRENT (A)
D
I
, DRAIN−TO−SOURCE RESISTANCE (mW)
DS(on)
R
VDS = 3 V
TJ = 25°C
TJ = 150°C
50
0
1.5 2 2.5 3 3.5 4
1.5
TJ = 25°C
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0 50 100 150 200 250 300 350 400
TJ = −55°C
VGS = 4.5 V
VGS = 10 V
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
DS(on)
R
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 10 V
= 30 A
I
D
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100000
10000
1000
, LEAKAGE (nA)
DSS
I
100
1251007550250−25−50
150
10
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3
TJ = 125°C
TJ = 100°C
TJ = 85°C
0 5 10 15 20 25 30
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
Page 4
NTMFS4C01N
TYPICAL CHARACTERISTICS
100k
10k
1k
100
C, CAPACITANCE (pF)
10
1000
100
VGS = 0 V
= 25°C
T
J
f = 1 MHz
10.1
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
VGS = 4.5 V
= 15 V
V
DD
I
= 15 A
D
C
C
C
ISS
OSS
RSS
t
r
t
t
d(off)
d(on)
12
11
10
Q
T
9
V
DS
V
GS
8
18
15
12
7
6
5
4
3
2
, GATE−TO−SOURCE VOLTAGE (V)
1
GS
0
V
Q
Q
GS
GD
VDS = 15 V
= 30 A
I
D
T
= 25°C
J
40 60 80 100 120
9
6
3
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
0
V
140200
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
t
f
100
10
t, TIME (ns)
10
Figure 9. Resistive Switching Time Variation
R
, GATE RESISTANCE (W)
G
vs. Gate Resistance
1000
100
10
0 V < VGS < 10 V
1
SINGLE PULSE
0.1
0.01
TC = 25°C
0.01
, DRAIN CURRENT (A)
D
I
Figure 11. Maximum Rated Forward Biased
1
, SOURCE CURRENT (A)
S
I
1001010.1
0.1
TJ = 150°C
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
1 10 1000.1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Safe Operating Area
TJ = 25°C
TJ = −55°C
0.5 0.7 0.9
100 ms
1 ms
10 ms
DC
1.00.80.60.40.3
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4
Page 5
NTMFS4C01N
TYPICAL CHARACTERISTICS
100
0.1
R(t) (°C/W)
0.01
0.001
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
R
= Steady State = 39°C/W
q
JA
0.010.0010.00010.000010.000001
t, TIME (s)
0.1 1 10 100 1000
Figure 12. Thermal Impedance (Junction−to−Ambient)
1000
100
T
= 25°C
, (A)
J(initial)
PCB Cu Area = 650 mm2
Cu Thk = 2 oz
P
CB
PEAK
I
10
1
1.00E−04
T
= 100°C
J(initial)
TIME IN AVALANCHE (s)
Figure 13. Avalanche Characteristics
1.00E−021.00E−03
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5
Page 6
DFN5 5x6, 1.27P
8
s
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
1
SCALE 2:1
2 X
0.20 C
0.10 C
0.10 C
C
0.05
c
PIN 5
(EXPOSED PAD)
D
2
D1
1234
TOP VIEW
SIDE VIEW
8X
b
A0.10 B
L
14
E2
G
D2
BOTTOM VIEW
A
B
E1
E
2
A
DETAIL A
e/2
e
K
M
L1
0.475
2 X
SOLDERING FOOTPRINT*
2X
2X
(SO−8FL)
CASE 488AA
ISSUE N
0.20 C
c
DETAIL A
RECOMMENDED
4.5600.495
2X
1.530
4 X
q
SEATING
3.200
A1
PLANE
DATE 25 JUN 201
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
DIM MIN NOM
A1 0.00 −−−
D1 4.70 4.90
D2 3.80 4.00
E1 5.70 5.90
E2 3.45 3.65
C
L1 0.125 REF
MILLIMETERS
A 0.90 1.00
b 0.33 0.41
c 0.23 0.28
D 5.15
5.00 5.30
E 6.15
6.00 6.30
e 1.27 BSC
G 0.51 0.575
K 1.20 1.35
L 0.51 0.575
M 3.00 3.40
q 0 −−−
_
GENERIC
MARKING DIAGRAM*
1
XXXXXX
AYWZZ
XXXXXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some product
may not follow the Generic Marking.
4.530
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
3.80
12
_
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
2X
0.905
0.965
1.000
4X
4X
0.750
1
DIMENSIONS: MILLIMETERS
1.330
1.270
PITCH
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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