ON Semiconductor NTMFS1D15N03CG User Manual

MOSFET - Power, Single

N-Channel, SO8-FL

30 V, 1.15 mW, 245 A

NTMFS1D15N03CG

Features

• Advanced Package (5x6 mm) with Excellent Thermal Conduction

• Ultra Low R

• These Devices are Pb−Free and are RoHS Compliant

Typical Applications

• Hot Swap Application

• Power Load Switch

• Battery Management and Protection

MAXIMUM RATINGS (T

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain
Current R
(Note 2)

Power Dissipation
R

q

JC

Continuous Drain
Current R
(Notes 1, 2)

Power Dissipation
R

q

JA

Pulsed Drain Current

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche
Energy (I

Operating Junction and Storage Temperature TJ, T

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Junction−to−Case − Steady State (Note 1)

Junction−to−Ambient − Steady State (Note 1)

1. Surface−mounted on FR4 board using a 1 in2, 2 oz. Cu pad.

2. The entire application environment impacts the thermal resistance values shown.
They are not constants and are only valid for the particular conditions noted. Actual
continuous current will be limited by thermal & electro−mechanical application
board design. R

q

JC

(Note 2)

q

JA

(Notes 1, 2)

= 23.2 A)

L(pk)

to Improve System Efficiency

DS(on)

= 25°C unless otherwise noted)

J

Parameter

TC = 25°C

Steady

State

Steady

State

TA = 25°C, t

Parameter Symbol Value Unit

is determined by the user’s board design.

q

CA

TC = 100°C 173

TC = 25°C P

TA = 25°C

TA = 100°C 30

TA = 25°C P

= 10 ms

p

Symbol Value Unit

stg

30 V

±20 V

245

124 W

43

3.8 W

900 A

112 A

354 mJ

−55 to
+ 175

260 °C

1.2

40

DSS

GS

I

D

D

I

D

D

I

DM

S

E

AS

T

L

R

q

JC

R

q

JA

A

A

°C

°C/W

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V

(BR)DSS

30 V 1.15 mW @ 10 V 245 A

G (4)

R

MAX ID MAX

DS(ON)

D (5)

S (1,2,3)

N−CHANNEL MOSFET

MARKING
DIAGRAM

1

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

1D15NG= Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability

S
S
S

G

D

D

1D15NG

AYWZZ

D

D

ORDERING INFORMATION

See detailed ordering, marking and shipping information on
page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2019

April, 2021 − Rev. 6

1 Publication Order Number:

NTMFS1D15N03CG/D

NTMFS1D15N03CG

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Ty p Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage

V

V

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS

T

J

DSS

GSS

VGS = 0 V, ID = 250 mA

/

ID = 250 mA, ref to 25°C

VGS = 0 V,

V

= 30 V

DS

TJ = 125°C 100

TJ = 25°C 1.0

VDS = 0 V, VGS = 20 V 100 nA

30 V

14

mV/°C

mA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Threshold Temperature Coefficient V

Drain−to−Source On Resistance R

V

GS(TH)

GS(TH)/TJ

DS(on)

Forward Transconductance g

Gate Resistance R

FS

VGS = VDS, ID = 160 mA

ID = 160 mA, ref to 25°C

VGS = 10 V, ID = 20 A 0.92 1.15

VDS = 3 V, ID = 20 A 61

G

TA = 25°C 1.7

1.3 2.2 V

−4.7 mV/°C

mW

W

CHARGES & CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

VGS = 0 V, VDS = 15 V, f = 1 MHz

VGS = 10 V, VDS = 15 V; ID = 20 A

7300

3600

99

94

11

19

6.9

pF

nC

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

t

d(ON)

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

r

f

VGS = 10 V, VDS = 15 V,

= 20 A, RG = 3 W

I

D

18

13

72

15

ns

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Reverse Recovery Charge Q

V

SD

RR

RR

VGS = 0 V,

I

= 10 A

S

VGS = 0 V, VDS = 15 V, IS = 20 A,

/dt = 100 A/ms

dI

S

TJ = 25°C 0.75 1.2

TJ = 125°C 0.60

77 ns

102 nC

V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

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NTMFS1D15N03CG

TYPICAL CHARACTERISTICS

350

300

250

200

150

100

, DRAIN CURRENT (A)

D

I

50

0

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

8.0

6.0

4.0

VGS = 10 V to 6 V

TJ = 25°C
I

D

5.5 V

5.0 V

4.5 V

4.0 V

3.5 V

3.0 V

2.5 V

= 20 A

350

300

250

200

150

100

, DRAIN CURRENT (A)

D

I

50

3.02.52.01.51.00.50

0

8.0

6.0

4.0

VDS = 3 V

TJ = 25°C

TJ = 125°C

1.5 3.5

TJ = 25°C

TJ = −55°C

2.5 4.0

3.02.01.0 4.5 5.0

2.0

, DRAIN−TO−SOURCE RESISTANCE (mW)

DS(on)

R

, NORMALIZED DRAIN−TO−

SOURCE RESISTANCE

DS(on)

R

0

4

3

VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)

87652

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

2.0
VGS = 10 V

1.8

= 20 A

I

D

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

50

Figure 5. On−Resistance Variation with

Temperature

150

, DRAIN−TO−SOURCE RESISTANCE (mW)

109

DS(on)

R

1.E−04

1.E−05

1.E−06

1.E−07

, LEAKAGE (nA)

DSS

I

1.E−08

1.E−09

17512510075250−25−50

2.0
VGS = 10 V

0

120100 200806040200 140 160 180

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

TJ = 175°C

TJ = 150°C

TJ = 125°C

TJ = 85°C

TJ = 25°C

15

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

302520105

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